Search Results - "Allerman AA"

Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.

Authors: Chen, Zeyu Cheng, Qianyu Hu, Shanshan et al.

Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5066-5074, 9p

Microelectronic properties of VOPcPhO–TiO2 organic/inorganic hybrid nanocomposite-based Schottky barrier diode.

Authors: Khan, Asad Ullah Hadi, Namra Muhammad, Fida et al.

Source: Journal of Materials Science: Materials in Electronics; Feb2025, Vol. 36 Issue 6, p1-14, 14p

Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.

Authors: Cheng, Qianyu Chen, Zeyu Hu, Shanshan et al.

Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5037-5050, 14p

Interfacial and electrical characterizations of PEALD-grown AlN/4H-SiC MOS structure: a type-I heterojunction for enhanced blocking performance.

Authors: Guo, Yun-Duo Wang, An-Feng Huang, Qi-Min et al.

Source: Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 3, p1-16, 16p

Effect of ZnO on structural and dielectric properties of AlN ceramics.

Authors: Radhika, Ethireddy Balmuchu, Shashi Priya Sridhar, V et al.

Source: Journal of Materials Science: Materials in Electronics; Sep2023, Vol. 34 Issue 26, p1-13, 13p

Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures.

Authors: Laifi, J. Bchetnia, A. Al-Hweiriny, Asma Abdullah et al.

Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-9, 9p

Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN orderly quantized integrated quantum barrier for highly efficient droop free UV-C LEDs: Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN...: I. Mazumder et al

Authors: Mazumder, Indrani Sapra, Kashish Chauhan, Ashok et al.

Source: Optical & Quantum Electronics. Dec2024, Vol. 56 Issue 12, p1-12. 12p.

Enhancing light extraction efficiency of GaN LED by combining complex‐period photonic crystals with doping.

Authors: Chen, Jie Wang, Tiantian Wang, Xiangfu

Source: Journal of the American Ceramic Society; Aug2023, Vol. 106 Issue 8, p4752-4769, 18p, 2 Color Photographs, 2 Diagrams, 5 Charts, 6 Graphs

A Tamm-Fano resonance glucose sensor based on Cu and distributed bragg reflector plasmonic coupling interface in the near-infrared regime.

Authors: Kulanthaivel, Jayakrishnan Hitaishi, V. Ashok, Nandam

Source: Optical & Quantum Electronics. Sep2024, Vol. 56 Issue 9, p1-17. 17p.

Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition.

Authors: Liu, Chuanyang Wang, Jia Shen, Yiming et al.

Source: Journal of Materials Science: Materials in Electronics; Sep2020, Vol. 31 Issue 17, p14737-14745, 9p

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Authors: Das, Partha¹, pd@eced.svnit.ac.in

Source: Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p3415-3425, 11p

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.

Authors: Zhang, Yachao Li, Yifan Wang, Jia et al.

Source: Nanoscale Research Letters; 5/20/2020, Vol. 15 Issue 1, p1-7, 7p

FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry.

Authors: Jelmakas, E. Kadys, A. Dmukauskas, M. et al.

Source: Journal of Materials Science: Materials in Electronics; Jun2021, Vol. 32 Issue 11, p14532-14541, 10p

Improvement in structural and electrical characteristics of nonpolar a-plane Si-doped n-AlGaN.

Authors: Chen, Shuai Zhang, Xiong Fan, Aijie et al.

Source: Journal of Materials Science; Sep2020, Vol. 55 Issue 26, p12022-12030, 9p, 2 Color Photographs, 1 Diagram, 1 Chart, 4 Graphs

Evolution of the TRICARE Pharmacy Benefit: A Decade of Change.

Authors: Lugo AM Allerman AA Trice SK

Source: Journal of managed care & specialty pharmacy [J Manag Care Spec Pharm] 2019 Nov; Vol. 25 (11), pp. 1195-1200.

Publication Type: Journal Article

Journal Info: Publisher: Academy of Managed Care Pharmacy Country of Publication: United States NLM ID: 101644425 Publication Model: Print Cited Medium: Internet ISSN: 2376-1032 (Electronic) Linking ISSN: 23760540 NLM ISO Abbreviation: J Manag Care Spec Pharm Subsets: MEDLINE

Review of Recent Progress on Vertical GaN-Based PN Diodes.

Authors: Pu, Taofei Younis, Usman Chiu, Hsien-Chin et al.

Source: Nanoscale Research Letters; 6/7/2021, Vol. 16 Issue 1, p1-14, 14p

Gallium–Boron–Phosphide (GaBP2): a new III–V semiconductor for photovoltaics.

Authors: Kumar, Upendra Nayak, Sanjay Chakrabarty, Soubhik et al.

Source: Journal of Materials Science; Aug2020, Vol. 55 Issue 22, p9448-9460, 13p, 1 Diagram, 2 Charts, 6 Graphs

Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire.

Authors: Lay, S. Mercier, F. Boichot, R. et al.

Source: Journal of Materials Science; Aug2020, Vol. 55 Issue 22, p9152-9162, 11p, 6 Diagrams, 4 Graphs

GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy.

Authors: Milanova, Malina Donchev, Vesselin Arnaudov, Boris et al.

Source: Journal of Materials Science: Materials in Electronics; Feb2020, Vol. 31 Issue 3, p2073-2080, 8p

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties.

Authors: Ściana, B. Radziewicz, D. Dawidowski, W. et al.

Source: Journal of Materials Science: Materials in Electronics; Sep2019, Vol. 30 Issue 17, p16216-16225, 10p