Search Results - "Burger, W. R."

  • Showing 1 - 9 results of 9
Refine Results
  1. 1

    Electrical quality of low-temperature (Tdep = 775°C) epitaxial silicon: the effect of deposition rate.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics; January 15 1988, Vol. 63, p383-389, 7p

    Save to List
  2. 2

    Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics; January 15 1988, Vol. 63, p368-382, 15p

    Save to List
  3. 3

    An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics; November 15 1987, Vol. 62, p4255-4268, 14p

    Save to List
  4. 4

    Electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics. 1/15/1988, Vol. 63 Issue 2, p368. 15p.

    Save to List
  5. 5

    Electrical quality of low-temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics. 1/15/1988, Vol. 63 Issue 2, p383. 7p.

    Save to List
  6. 6

    An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and pn junction characterization.

    Authors: Burger, W. R. Reif, R.

    Source: Journal of Applied Physics. 11/15/1987, Vol. 62 Issue 10, p4255. 14p.

    Save to List
  7. 7

    Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition.

    Authors: Ohi, S. Burger, W. R. Reif, R.

    Source: Applied Physics Letters; 9/5/1988, Vol. 53 Issue 10, p891, 3p

    Save to List
  8. 8

    Bulk-quality bipolar transistors fabricated in low-temperature (Tdep =800 °C) epitaxial silicon.

    Authors: Burger, W. R. Reif, R.

    Source: Applied Physics Letters; 5/18/1987, Vol. 50 Issue 20, p1447, 3p

    Save to List
  9. 9

    Low-temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement.

    Authors: Donahue, T. J. Burger, W. R. Reif, R.

    Source: Applied Physics Letters; 1984, Vol. 44 Issue 3, p346-348, 3p

    Save to List

Search Tools: