Search Results - "Burk, D. E."

Anomalous electron-beam-induced-current collection in denuded-zone-treated low-doped silicon.

Authors: Burk, D. E. Chung, B.-C.

Source: Journal of Applied Physics; May 1 1989, Vol. 65, p3505-3509, 5p

The peripheral bipolar junction transistor and its relation to predictability in device modeling.

Authors: Choi, M. Burk, D. E.

Source: Solid-State Electronics; January 1993, Vol. 36, p35-40, 6p

Demonstration of excitation-dependent grain-boundary recombination velocity in polycrystalline silicon.

Authors: Sundaresan, R. Fossum, J. G. Burk, D. E.

Source: Journal of Applied Physics; August 15 1984, Vol. 56, p964-970, 7p

Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminum.

Authors: Sundaresan, R. Burk, D. E. Fossum, J. G.

Source: Journal of Applied Physics; February 15 1984, Vol. 55, p1162-1167, 6p

Determination of surface recombination velocity at a grain boundary using electron-beam-induced current.

Authors: Burk, D. E.

Source: Journal of Applied Physics; January 1983, Vol. 54, p169-173, 5p

Redistribution of Fe, Cr and Mo in buried oxide silicon-on-insulator structures during high-temperature furnace annealing.

Authors: Puga, M. M. S. Hummel, R. E. Burk, D. E.

Source: Semiconductor Science & Technology; August 1992, Vol. 7, p1058-1066, 9p

The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.

Authors: Puga, M. M. S. Hummel, R. E. Burk, D. E.

Source: Semiconductor Science & Technology; August 1992, Vol. 7, p1067-1071, 5p

Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation.

Authors: Brady, F. T. Li, S. S. Burk, D. E. et al.

Source: Applied Physics Letters; 3/14/1988, Vol. 52 Issue 11, p886, 3p