Search Results - "Burke, T.M."

InSb1−xNx growth and devices

Authors: Ashley, T. Burke, T.M. Pryce, G.J. et al.

Source: Solid-State Electronics. Mar2003, Vol. 47 Issue 3, p387. 8p.

Subjects: Solid state electronics, Nitrogen, Indium

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

Authors: Murzyn, P. Pidgeon, C.R. Phillips, P.J. et al.

Source: Physica E; Jan2004, Vol. 20 Issue 3/4, p220, 4p

Variation of the confinement potential of a quasi-one-dimensional electron gas by lateral p-n....

Authors: Evans, R.J. Burke, T.M.

Source: Applied Physics Letters; 3/18/1996, Vol. 68 Issue 12, p1708, 3p, 1 Diagram, 3 Graphs

Selective area oxide desorption by electron irradiation in a H[sub 2] ambient on GaAs (100).

Authors: Brown, S.J. Burke, T.M. Smith, M.P. et al.

Source: Applied Physics Letters. 2/15/1999, Vol. 74 Issue 7, p950. 3p. 1 Black and White Photograph, 2 Graphs.

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

Authors: Murzyn, P. Pidgeon, C.R. Phillips, P.J. et al.

Source: Physica E. Jan2004, Vol. 20 Issue 3/4, p220. 4p.

Large-area IR negative luminescent devices.

Authors: Nash, G.R. Gordon, N.T. Ashley, T. et al.

Source: IEE Proceedings -- Optoelectronics. Aug2003, Vol. 150 Issue 4, p371-375. 5p.