Search Results - "Burkey, B. C."

Numerical studies of the charge capacity of surface-channel charge-coupled devices.

Authors: Lavine, J. P. Burkey, B. C.

Source: Solid-State Electronics; October 1981, Vol. 24, p995-998, 4p

Capacitance and doping profiles of ion-implanted, buried-channel MOSFETs.

Authors: Lubberts, G. Burkey, B. C.

Source: Solid-State Electronics; January 1979, Vol. 22, p47-54, 8p

Method for calculating band profile and capacitance of nonuniformly doped Schottky barriers.

Authors: Lubberts, G. Burkey, B. C.

Source: Solid-State Electronics; September 1975, Vol. 18, p805-809, 5p

Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.

Authors: Lubberts, G. Burkey, B. C.

Source: Journal of Applied Physics; February 1 1984, Vol. 55, p760-763, 4p

Persistent photoconductivity in donor-doped Cd1-xZnxTe.

Authors: Burkey, B. C.

Source: Journal of Applied Physics; March 1976, Vol. 47, p1095-1102, 8p

Extensions of the Scharfetter-Gummel approach to charge transfer.

Authors: Lavine, J. P. Burkey, B. C.

Source: Solid-State Electronics; January 1980, Vol. 23, p75-77, 3p