Search Results - "Burkhardt, E. G."

Stratospheric nitric oxide.

Authors: Burkhardt, E. G.

Source: Science; 13 Jun 1975, Vol. 188, p1111-1113, 3p

Stratospheric Nitric Oxide: Measurements during Daytime and Sunset.

Authors: BURKHARDT, E. G. LAMBERT, C. A. PATEL, C. K. N.

Source: Science (pre-March 2025). 6/13/1975, Vol. 188 Issue 4193, p1111-1113. 3p.

Picosecond study of near-band-gap nonlinearities in GaInAsP.

Authors: Islam, M. N. Ippen, E. P. Burkhardt, E. G.

Source: Journal of Applied Physics; April 15 1986, Vol. 59, p2619-2628, 10p

1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.

Authors: Tsang, W. T. Bowers, J. E. Burkhardt, E. G.

Source: Journal of Applied Physics; February 15 1988, Vol. 63, p1218-1220, 3p

Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers.

Authors: Jung, H. Burkhardt, E. G. Pfister, W.

Source: Applied Physics Letters; 10/3/1988, Vol. 53 Issue 14, p1230, 3p

GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxy.

Authors: Tsang, W. T. Levi, A. F. J. Burkhardt, E. G.

Source: Applied Physics Letters; 9/12/1988, Vol. 53 Issue 11, p983, 3p

Growth of high-quality GaxIn1-xAsyP1-y by chemical beam epitaxy.

Authors: Tsang, W. T. Schubert, E. F. Chiu, T. H. et al.

Source: Applied Physics Letters; 9/7/1987, Vol. 51 Issue 10, p761, 3p

Picosecond nonlinear absorption and four-wave mixing in GaInAsP.

Authors: Islam, M. N. Ippen, E. P. Burkhardt, E. G. et al.

Source: Applied Physics Letters; 11/15/1985, Vol. 47 Issue 10, p1042, 3p

Luminescence in ion-implanted In0.53Ga0.47As.

Authors: Shah, Jagdeep Tell, B. Bridges, T. J. et al.

Source: Applied Physics Letters; 7/15/1985, Vol. 47 Issue 2, p146, 3p

High-frequency constricted mesa lasers.

Authors: Bowers, J. E. Hemenway, B. R. Gnauck, A. H. et al.

Source: Applied Physics Letters; 7/15/1985, Vol. 47 Issue 2, p78, 3p

1.55-μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers.

Authors: Koch, T. L. Bridges, T. J. Burkhardt, E. G. et al.

Source: Applied Physics Letters; 7/1/1985, Vol. 47 Issue 1, p12, 3p

Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm.

Authors: Coldren, L. A. Koch, T. L. Bridges, T. J. et al.

Source: Applied Physics Letters; Jan1985, Vol. 46 Issue 1, p5, 3p

Beryllium implantation doping of InGaAs.

Authors: Tell, B. Leheny, R. F. Liao, A. S. H. et al.

Source: Applied Physics Letters; 1984, Vol. 44 Issue 4, p438-440, 3p

Electrical behavior of a 31-cm, thin-film YBaCuO superconducting microstrip.

Authors: Hornak, L. A. Hatamian, M. Tewksbury, S. K. et al.

Source: Journal of Applied Physics. 11/15/1989, Vol. 66 Issue 10, p5066. 6p.

Resistance and mobility changes in InGaAs produced by light ion bombardment.

Authors: Tell, B. Brown-Goebeler, K. F. Bridges, T. J. et al.

Source: Journal of Applied Physics. 7/15/1986, Vol. 60 Issue 2, p665. 3p.

Spectroscopic measurements of stratospheric nitric oxide and water vapor.

Authors: Patel CK Burkhardt EG Lambert CA

Source: Science (New York, N.Y.) [Science] 1974 Jun 14; Vol. 184 (4142), pp. 1173-6.

Publication Type: Journal Article

Journal Info: Publisher: American Association for the Advancement of Science Country of Publication: United States NLM ID: 0404511 Publication Model: Print Cited Medium: Print ISSN: 0036-8075 (Print) Linking ISSN: 00368075 NLM ISO Abbreviation: Science Subsets: PubMed not MEDLINE

[Multipolar cells of the spinal ganglion].

Transliterated Title: Zur Frage der multipolaren Zellen in den Spinalganglien.

Authors: BURKHARDT EG

Source: Acta anatomica [Acta Anat (Basel)] 1953; Vol. 17 (3), pp. 253-63.

Publication Type: Journal Article

Journal Info: Publisher: Karger Country of Publication: Switzerland NLM ID: 0370272 Publication Model: Print Cited Medium: Print ISSN: 0001-5180 (Print) Linking ISSN: 00015180 NLM ISO Abbreviation: Acta Anat (Basel) Subsets: OLDMEDLINE