Search Results - "Burrows, C. P."

Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon.

Authors: Coleman, P. G. Burrows, C. P. Knights, A. P.

Source: Applied Physics Letters; February 11 2002, Vol. 80 Issue 6, p947-949, 3p

A comparison of techniques used to simulate the scattering of electromagnetic radiation by metallic nanostructures.

Authors: Parsons, J. Burrows, C. P. Sambles, J. R. et al.

Source: Journal of Modern Optics. Mar2010, Vol. 57 Issue 5, p356-365. 10p. 1 Chart, 5 Graphs.

Subjects: Simulation methods & models, Electromagnetic wave scattering, Nanostructures, Mie scattering, T-matrix

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks.

Authors: Coleman, P. G. Burrows, C. P. Mahapatra, R.

Source: Journal of Applied Physics; July 1 2007, Vol. 102 Issue 1, p014106-014106, 1p

Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.

Authors: Mahapatra, R. Chakraborty, Amit K. Poolamai, N. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2007, Vol. 25 Issue 1, p217-223, 7p, 1 Black and White Photograph, 1 Diagram, 8 Graphs

Human power output during repeated sprint cycle exercise: the influence of thermal stress.

Authors: Ball, D. Burrows, C. Sargeant, A.J.

Source: European Journal of Applied Physiology & Occupational Physiology. Mar 1999: Vol. 79 Issue 4. p. 360-366-366.

Distribution Management (Book Review).

Authors: Burrows, C. P.

Source: Journal of the Royal Statistical Society: Series C (Applied Statistics). 1972, Vol. 21 Issue 3, p337. 2p.

The Radio Occultation Processing Package, ROPP.

Authors: Culverwell, I. D. Lewis, H. W. Offiler, D. et al.

Source: Atmospheric Measurement Techniques. 2015, Vol. 8 Issue 4, p1887-1899. 13p.

Slow positron beams—a versatile tool for studying ion implantation defect related phenomena.

Authors: Sealy, B. J. Knights, A. P. Gwilliam, R. M. et al.

Source: AIP Conference Proceedings. 2001, Vol. 576 Issue 1, p745. 4p.

Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon.

Authors: Harding, R. Davies, G. Tan, J. et al.

Source: Journal of Applied Physics. 10/1/2006, Vol. 100 Issue 7, p073501. 4p. 4 Graphs.

Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.

Authors: Mahapatra, R. Chakraborty, Amit K. Poolamai, N. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Jan/Feb2007, Vol. 25 Issue 1, p217-223. 7p. 1 Black and White Photograph, 1 Diagram, 8 Graphs.

Subjects: Titanium dioxide, Silica, Dielectrics, Metal oxide semiconductors, X-ray photoelectron spectroscopy

Photoluminescence response of ion-implanted silicon.

Authors: Harding, Ruth E. Davies, Gordon Hayama, S. et al.

Source: Applied Physics Letters. 10/30/2006, Vol. 89 Issue 18, p181917. 3p. 1 Chart, 2 Graphs.

Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H–SiC substrate.

Authors: Mahapatra, R. Poolamai, N. Chattopadhyay, S. et al.

Source: Applied Physics Letters. 2/13/2006, Vol. 88 Issue 7, p072910. 3p. 5 Graphs.

Enhanced nitrogen diffusion in 4H-SiC.

Authors: Phelps, G. J. Wright, N. G. Chester, E. G. et al.

Source: Applied Physics Letters. 1/14/2002, Vol. 80 Issue 2, p228. 3p. 1 Graph.

Cascaded optical field enhancement in composite plasmonic nanostructures.

Authors: Kravets VG Zoriniants G Burrows CP et al.

Source: Physical review letters [Phys Rev Lett] 2010 Dec 10; Vol. 105 (24), pp. 246806. Date of Electronic Publication: 2010 Dec 09.

Publication Type: Journal Article

Journal Info: Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1079-7114 (Electronic) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE

Composite au nanostructures for fluorescence studies in visible light.

Authors: Kravets VG Zoriniants G Burrows CP et al.

Source: Nano letters [Nano Lett] 2010 Mar 10; Vol. 10 (3), pp. 874-9.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE

Monovacancy and interstitial migration in ion-implanted silicon.

Authors: Coleman PG Burrows CP

Source: Physical review letters [Phys Rev Lett] 2007 Jun 29; Vol. 98 (26), pp. 265502. Date of Electronic Publication: 2007 Jun 29.

Publication Type: Journal Article

Journal Info: Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE

Fluorine in silicon: diffusion, trapping, and precipitation.

Authors: Pi XD Burrows CP Coleman PG

Source: Physical review letters [Phys Rev Lett] 2003 Apr 18; Vol. 90 (15), pp. 155901. Date of Electronic Publication: 2003 Apr 17.

Publication Type: Journal Article

Journal Info: Publisher: American Physical Society Country of Publication: United States NLM ID: 0401141 Publication Model: Print-Electronic Cited Medium: Print ISSN: 0031-9007 (Print) Linking ISSN: 00319007 NLM ISO Abbreviation: Phys Rev Lett Subsets: PubMed not MEDLINE