Search Results - "Burte E"

DGS and Multilayer Methods Make LPF.

Authors: Boutejdar, A. Omar, A. Burte, E. P.

Source: Microwaves & RF; March 2011, Vol. 50 Issue 3, p87-96, 10p

Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide.

Authors: Treu, M. Burte, E. P. Schörner, R.

Source: Journal of Applied Physics; September 1 1998, Vol. 84 Issue 5, p2943-2948, 6p

Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC.

Authors: Friedrichs, P. Burte, E. P. Schörner, R.

Source: Journal of Applied Physics; May 15 1996, Vol. 79, p7814-7819, 6p

The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.

Authors: Dehm, C. Burte, E. P. Gyulai, J.

Source: Journal of Applied Physics; May 1 1992, Vol. 71, p4365-4369, 5p

Simulation of the step coverage for chemical vapor deposited silicon dioxide.

Authors: Wille, H. Burte, E. Ryssel, H.

Source: Journal of Applied Physics; April 1 1992, Vol. 71, p3532-3537, 6p

Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride.

Authors: Bauer, A. J. Burte, E. P. Ryssel, H.

Source: Solid-State Electronics; July 1997, Vol. 41, p1057-1065, 9p

The impact of iron, copper, and calcium contamination of silicon surfaces on the yield of a MOS DRAM test process.

Authors: Burte, E. P. Aderhold, W.

Source: Solid-State Electronics; July 1997, Vol. 41, p1021-1025, 5p

Interface properties of MOS structures on n-type 6H-SiC.

Authors: Friedrichs, P. Burte, E. P. Schörner, R.

Source: Solid-State Electronics; July 1997, Vol. 41, p991-994, 4p

Inversion layer solar cells on chemically vapor-deposited polycrystalline silicon thin films.

Authors: Burte, E. P. Hezel, R.

Source: Journal of Applied Physics; February 15 1984, Vol. 55, p1183-1187, 5p

Thin TiO2 films prepared by low pressure chemical vapor deposition.

Authors: Rausch, N. Burte, E. P.

Source: Journal of the Electrochemical Society; January 1993, Vol. 140, p145-149, 5p

The sensitization pattern differs according to rhinitis and asthma multimorbidity in adults: the EGEA study.

Authors: Burte, E. Bousquet, J. Siroux, V. et al.

Source: Clinical & Experimental Allergy. Apr2017, Vol. 47 Issue 4, p520-529. 10p. 2 Charts, 2 Graphs.

LASER IRRADIATION OF Ge-Sb-Te THIN FILMS GROWN BY HOT WIRE CHEMICAL VAPOR DEPOSITION.

Authors: Silinskas, M. Reso, D. Burte, E. P. et al.

Source: International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2012, p44-47, 4p, 3 Graphs

COMPARISON OF DIFFERENT CHEMICAL VAPOR DEPOSITION METHODS FOR GROWTH OF GERMANIUM SELENIDE THIN FILMS.

Authors: Reso, D. Silinskas, M. Burte, E. P.

Source: International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2010, p35-38, 4p, 1 Black and White Photograph, 2 Graphs

HOT WIRE CHEMICAL VAPOR DEPOSITION AND CHARACTERIZATION OF Ge-Sb-Te THIN FILMS.

Authors: Silinskas, M. Reso, D. Burte, E. P.

Source: International Conference: Radiation Interaction with Material & Its Uses in Technologies; 2010, p49-51, 3p, 3 Graphs

STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF HIGH-k STRONTIUM TANTALATE DEPOSITED BY LIQUID DELIVERY MOCVD.

Authors: Silinskas, M. Lisker, M. Burte, E. P. et al.

Source: Integrated Ferroelectrics. Oct2006, Vol. 86 Issue 1, p31-39. 9p. 1 Black and White Photograph, 1 Chart, 7 Graphs.

Subjects: Strontium compounds, Metal organic chemical vapor deposition, Crystallization, Annealing of crystals, Dielectrics, Transmission electron microscopy

Rhinitis associated with asthma is distinct from rhinitis alone: The ARIA‐MeDALL hypothesis.

Authors: Bousquet, J. Melén, E. Haahtela, T. et al.

Source: Allergy. May2023, Vol. 78 Issue 5, p1169-1203. 35p.

New Compact Dual Bandpass Filter Using Coupled Double-Ring Resonators and DGS-Technique.

Authors: Boutejdar, A. Eltabit, N. M. Ibrahim, A. A. et al.

Source: Applied Computational Electromagnetics Society Journal. Feb2016, Vol. 31 Issue 2, p132-137. 6p.

Enhanced ferroelectric properties of multilayer SBT-BTN thin films for NVRAM applications.

Authors: Khorkhordin, O. Yeh, C. P. Kalkofen, B. et al.

Source: Integrated Ferroelectrics. 2016, Vol. 176 Issue 1, p1-11. 11p.

Design of a new bandpass filter with sharp transition band using multilayer-technique and U-defected ground structure.

Authors: Boutejdar, A. Batmanov, A. Awida, M. H. et al.

Source: IET Microwaves, Antennas & Propagation (Institution of Engineering & Technology). Sep2010, Vol. 4 Issue 9, p1415-1420. 6p. 1 Black and White Photograph, 5 Diagrams, 4 Graphs.

FABRICATION OF FERROELECTRIC PZT THIN FILMS BY LIQUID DELIVERY MOCVD USING NOVEL Zr and Ti PRECURSORS.

Authors: YEH, C. P. LISKER, M. VEZIN, V. et al.

Source: Integrated Ferroelectrics. 2008, Vol. 104 Issue 1, p16-24. 9p. 1 Black and White Photograph, 1 Diagram, 1 Chart, 3 Graphs.