Search Results - "Colocci M"

Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures.

Authors: Borri, P. Gurioli, M. Colocci, M.

Source: Journal of Applied Physics; September 1 1996, Vol. 80, p3011-3016, 6p

Thermal ionization of excitons in GaAs/AlGaAs quantum well structures.

Authors: Colocci, M. Gurioli, M. Vinattieri, A.

Source: Journal of Applied Physics; September 15 1990, Vol. 68, p2809-2812, 4p

Different contrast mechanisms induced by topography artifacts in near-field optical microscopy.

Authors: Gucciardi, P. G. Colocci, M.

Source: Applied Physics Letters; September 3 2001, Vol. 79 Issue 10, p1543-1545, 3p

Thermal-expansion effects in near-field optical microscopy fiber probes induced by laser light absorption.

Authors: Gucciardi, P. G. Colocci, M. Labardi, M.

Source: Applied Physics Letters; November 22 1999, Vol. 75 Issue 21, p3408-3410, 3p

Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering.

Authors: Colocci, M. Vinattieri, A. Lippi, L.

Source: Applied Physics Letters; January 25 1999, Vol. 74 Issue 4, p564-566, 3p

Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition.

Authors: Colocci, M. Bogani, F. Carraresi, L.

Source: Applied Physics Letters; June 9 1997, Vol. 70, p3140-3142, 3p

Carrier recombination kinetics in (3 1 1)A InGaAs sidewall quantum wires

Authors: Alderighi, D. Zamfirescu, M. Gurioli, M. et al.

Source: Physica E; Jul2004, Vol. 23 Issue 3/4, p449-454, 6p

Near-field mapping of quantum dot emission from single-photonic crystal cavity modes

Authors: Intonti, F. Vignolini, S. Riboli, F. et al.

Source: Physica E; Apr2008, Vol. 40 Issue 6, p1965-1967, 3p

Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

Authors: Rudamas, C. Martínez-Pastor, J. González, L. et al.

Source: Physica E; Apr2003, Vol. 17, p206, 3p

Optical investigation of interface roughness and defect incorporation in GaAs/AlGaAs quantum....

Authors: Gurioli, M. Vinattieri, A. Colocci, M. et al.

Source: Applied Physics Letters; 10/21/1991, Vol. 59 Issue 17, p2150, 3p, 4 Graphs

Time-resolved luminescence of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy on misoriented substrates.

Authors: Colocci, M. Gurioli, M. Vinattieri, A. et al.

Source: Applied Physics Letters; 8/20/1990, Vol. 57 Issue 8, p783, 3p

Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots.

Authors: Brusaferri, L. Sanguinetti, S. Grilli, E. et al.

Source: Applied Physics Letters; 11/25/1996, Vol. 69 Issue 22, p3354, 3p, 4 Graphs

Thermal-expansion effects in near-field microscopy fiber probes induced by laser light absorption.

Authors: Gucciardi, P.G. Colocci, M. Labardi, M. et al.

Source: Applied Physics Letters. 11/22/1999, Vol. 75 Issue 21, p3408. 3p. 2 Diagrams, 3 Graphs.

Photoluminescence properties of multiple stacked planes of GaN/AIN quantum dots studied by....

Authors: Gucciardi, P.G. Vinattieri, A. Colocci, M. et al.

Source: Journal of Microscopy. Apr2001, Vol. 202 Issue 1, p212. 6p. 2 Color Photographs, 4 Black and White Photographs, 1 Diagram, 1 Graph.

Near-field measurement of short-range correlation in optical waves transmitted through random media.

Authors: Emiliani, V. Intonti, F. Wiersma, D. et al.

Source: Journal of Microscopy. Mar2003, Vol. 209 Issue 3, p173-176. 4p.

The highest precision proof of CPT invariance in the 'nuclear binding masses'.

Authors: Akindinov, A. Alici, A. Antonioli, P. et al.

Source: International Journal of Modern Physics A: Particles & Fields; Gravitation; Cosmology; Nuclear Physics. Aug2015, Vol. 30 Issue 24, p-1. 6p.

Polarization field effects on the recombination dynamics in low-In-content InGaN multi-quantum wells

Authors: Armani, N. Rossi, F. Ferrari, C. et al.

Source: Superlattices & Microstructures. Oct2004, Vol. 36 Issue 4-6, p615-624. 10p.

Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures

Authors: Rudamas, C. Martınez-Pastor, J. González, L. et al.

Source: Surface Science. Jun2002, Vol. 507-510, p619. 5p.

Interaction mechanisms of near-surface quantum wells with oxidized and H-passivated AlGaAs surfaces.

Authors: Emiliani, V. Bonanni, B. Presilla, C. et al.

Source: Journal of Applied Physics. 5/15/1994, Vol. 75 Issue 10, p5114. 9p. 1 Chart, 10 Graphs.

Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities.

Authors: Stokker-Cheregi, F. Vinattieri, A. Semond, F. et al.

Source: Applied Physics Letters. 1/28/2008, Vol. 92 Issue 4, p042119. 3p. 4 Graphs.