Search Results - "Coluzza, C."

A single-photon detector for the measurement of optical activity in the deep sea.

Authors: Ameli, F. Bonori, M. Coluzza, C.

Source: Review of Scientific Instruments; December 2002, Vol. 73 Issue 12, p4164-4168, 5p

Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer.

Authors: Almeida, J. Coluzza, C. dell'Orto, T.

Source: Journal of Applied Physics; January 1 1997, Vol. 81, p292-296, 5p

Photoemission electron microscopy studies of Pt/GaP(001) buried interfaces.

Authors: Almeida, J. Coluzza, C. dell'Orto, T.

Source: Journal of Applied Physics; August 1 1996, Vol. 80, p1460-1464, 5p

Ar+ bombardment of Si(100) in oxygen atmosphere: room temperature oxide formation studied by x-ray photoelectron spectroscopy.

Authors: Terrasi, A. Coluzza, C. Margaritondo, G.

Source: Journal of Applied Physics; September 15 1995, Vol. 78, p3820-3823, 4p

Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: an internal photoemission study.

Authors: Almeida, J. dell'Orto, Tiziana Coluzza, C.

Source: Journal of Applied Physics; September 1 1995, Vol. 78, p3258-3261, 4p

Spatially localized energy shifts in the photoemission spectroscopy of insulators.

Authors: Coluzza, C. Almeida, J. dell'Orto, Tiziana

Source: Journal of Applied Physics; September 15 1994, Vol. 76, p3710-3713, 4p

Local chemical composition of HgBaCaCuO high-temperature superconductors.

Authors: Alméras, P. Dell'Orto, T. Coluzza, C.

Source: Journal of Applied Physics; July 15 1994, Vol. 76, p1100-1104, 5p

Photoemission spectromicroscopy: a new insight in the chemistry of SnOx films for gas sensors.

Authors: Sanjinés, R. Coluzza, C. Rosenfeld, D.

Source: Journal of Applied Physics; April 15 1993, Vol. 73, p3997-4003, 7p

Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells.

Authors: Capizzi, M. Coluzza, C. Emililani, V.

Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1454-1459, 6p

Effect of ohmic contact conductance on the distribution of surface and bulk currents in semiconductor planar devices.

Authors: Chong-ru Huo Ben-yuan Gu Coluzza, C.

Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1473-1477, 5p

Scattering effects on resonant tunneling in double-barrier heterostructures.

Authors: Gu, B. Coluzza, C. Mangiantini, M.

Source: Journal of Applied Physics; May 1 1989, Vol. 65, p3510-3514, 5p

Analysis of mechanism for resonant tunneling via localized states in thin SiO2 films.

Authors: Gu, B. Mangiantini, M. Coluzza, C.

Source: Journal of Applied Physics; December 15 1988, Vol. 64, p6867-6870, 4p

Schottky barrier height dependence on the silicon interlayer thickness of Au/Si/n-GaAs contacts: chemistry of interface formation study.

Authors: Ivančo, J. Almeida, J. Coluzza, C.

Source: Vacuum; July-August 1998, Vol. 50 Issue 3-4, p407-411, 5p

Indented barrier resonant tunneling rectifiers.

Authors: Di Ventra, M. Papp, G. Coluzza, C.

Source: Journal of Applied Physics; October 1 1996, Vol. 80, p4174-4176, 3p

Band offsets in GaAs/amorphous Ge and GaP/amorphous Ge heterojunctions measured by internal photoemission.

Authors: Coluzza, C. Lama, F. Frova, A.

Source: Journal of Applied Physics; September 15 1988, Vol. 64, p3304-3306, 3p

Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.

Authors: Mittiga, A. Capizzi, M. Coluzza, C.

Source: Journal of Applied Physics; May 1 1988, Vol. 63, p4748-4750, 3p

Effects of tunneling on a-Si:H Schottky barriers.

Authors: Mariucci, L. Gislon, P. Coluzza, C.

Source: Journal of Applied Physics; October 15 1987, Vol. 62, p3285-3287, 3p

Ellipsometric and XPS analysis of the interface between silver and SiO2, TiO2 and SiNx thin films

Authors: Masetti, E. Bulir, J. Gagliardi, S. et al.

Source: Thin Solid Films; May2004, Vol. 455/456, p468, 5p

SPECTROMICROSCOPY AND CHEMICAL IMAGING.

Authors: COLUZZA, C. MOBERG, R.

Source: Surface Review & Letters; Oct1995, Vol. 2 Issue 5, p619-641, 23p

Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures.

Authors: Yang, D. Garland, J. W. Raccah, P. M. et al.

Source: Applied Physics Letters; 12/24/1990, Vol. 57 Issue 26, p2829, 3p