Search Results - "Epitaxy"

Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy.

Authors: Colston, Gerard Perera, Kushani H. Renz, Arne et al.

Source: Materials (1996-1944). May2026, Vol. 19 Issue 9, p1896. 8p.

Subjects: Semiconductor wafer bonding, Epitaxy, Power electronics, Silicon carbide, Crystallinity

Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD.

Authors: Huang, Chih Yang Gucmann, Filip Singh, Anoop Kumar et al.

Source: Discover Nano; 7/6/2026, Vol. 21 Issue 1, p1-21, 21p

Epitaxial Stabilization of Ultrasmall Cu Nanoparticles With High‐Energy {110} Facets on Ti3C2 MXene for Efficient CO2‐to‐Acetate Electrocatalysis.

Authors: Li, Yan‐An Huang, Jiapeng Zhao, Yaohui et al.

Source: Advanced Science. 6/29/2026, Vol. 13 Issue 36, p1-10. 10p.

Growth‐Pathway‐Controlled van der Waals Epitaxy of Phase‐Selective Tin Sulfides.

Authors: Lee, Jaehyeok Kim, Jinwoo Lee, Gwan‐Hyoung

Source: Advanced Science. Jun2026, p1. 9p. 5 Illustrations.

Controlled Epitaxial Growth of Perovskite Single-Crystal Heterojunction Arrays for Self-Powered Imaging.

Authors: Lu, Hui Yu, Yang Wu, Wenqiang et al.

Source: Nano-Micro Letters. 5/29/2026, Vol. 18 Issue 1, p1-12. 12p.

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices.

Authors: Lagrave, Jules Bernier, Nicolas Jalabert, Thomas et al.

Source: Advanced Science. May2026, p1. 13p. 6 Illustrations.

A scalable molten-salt epitaxy of analog-compatible correlated perovskites at micrometer-scale thickness.

Authors: (边驿), Yi Bian (蒋沛恒), Peiheng Jiang (陈诺夫), Nuofu Chen et al.

Source: National Science Review. May2026, Vol. 13 Issue 10, p1-10. 10p.

Oscillatory phase transition induced structural extension during iron oxide reduction.

Authors: Fu, Haoyang Chen, Qingze Min, Benzhi et al.

Source: Fundamental Research. May2026, Vol. 6 Issue 3, p1459-1467. 9p.

Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.

Authors: Savelyev, Igor Mitchell, William Ruda, Harry et al.

Source: Advances in Materials Science & Engineering. 4/18/2026, Vol. 2026, p1-9. 9p.

Subjects: Molecular beam epitaxy, Epitaxy, Nanocrystals, Silicon wafers, Semiconductor nanocrystals, Transmission electron microscopy, Nanopatterning, Nucleation

Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy.

Authors: Zhang, Diandian Eldose, Nirosh M. Baral, Dinesh et al.

Source: Crystals (2073-4352); Apr2026, Vol. 16 Issue 4, p262, 10p

图形化与非图形化薄膜衬底上Na 助熔剂法 生长GaN 晶体的研究.

Alternate Title: GaN Crystals on Patterned and Non-Patterned Thin Film Substrates Grown by Na-Flux Method.

Authors: 黄戈萌 马明 夏颂 et al.

Source: Journal of Synthetic Crystals. Mar2026, Vol. 55 Issue 3, p411-422. 12p.

Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.

Authors: Talwar, Devki N. Lin, Hao-Hsiung

Source: Materials (1996-1944). Mar2026, Vol. 19 Issue 5, p923. 20p.

Subjects: Raman spectroscopy, Molecular beam epitaxy, Optoelectronic devices, Phonon-phonon interactions, Gallium arsenide semiconductors, Band gaps, Vibrational spectra

High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation.

Authors: Mancuso, Alfio Samuele De Luca, Saverio Sangregorio, Enrico et al.

Source: Materials (1996-1944). Feb2026, Vol. 19 Issue 4, p699. 16p.

Subjects: Ion implantation, Epitaxy, Electric properties, Semiconductor diodes, Semiconductor manufacturing, Neutron counters, High voltages, Thermal stability

Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.

Authors: Gao, Fei Ming, Ming Zhang, Jie-Yin et al.

Source: Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p423. 8p.

Subjects: Synthesis of nanowires, Molecular beam epitaxy, Quantum electronics, Nanowires, Qubits, Substrates (Materials science), Buffer layers

High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.

Authors: Ye, Gancheng Zhang, Jieyin Chen, Yilin et al.

Source: Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p424. 8p.

Subjects: Electron mobility, Molecular beam epitaxy, Hall effect, Carrier density, Dislocation structure, Silicon wafers, Germanium films

Equilibrium shape and surface termination of supported magnetite nanoparticles.

Authors: Haji Naghi Tehrani, Mohammad Ebrahim Dolling, Daniel Silvan Schober, Jan-Christian et al.

Source: Communications Chemistry. 4/11/2026, Vol. 9 Issue 1, p1-11. 11p.

Characterization of Novel Composite Scintillators Based on the Epitaxial Structures of TbAG:Ce/GAGG:Ce and TbAG:Ce,Mg/GAGG:Ce Garnets in Mixed Radiation Fields.

Authors: Syntfeld-Każuch, Agnieszka Szczęśniak, Tomasz Bachiri, Abdellah et al.

Source: Crystals (2073-4352); Apr2026, Vol. 16 Issue 4, p230, 17p

氧化镓薄膜外延生长、掺杂调控与缺陷控制研究进展.

Alternate Title: Research Progress in Epitaxial Growth, Doping Control, and Defect Management of Gallium Oxide Thin Films.

Authors: 陈一宏 周晓庆 徐文静 et al.

Source: Journal of Synthetic Crystals. Apr2026, Vol. 55 Issue 4, p487-545. 59p.

A second-order linear energy-stable scheme for slope-selection epitaxial thin-film growth.

Authors: Lee, Hyun Geun¹ (AUTHOR) leeh1@dongguk.edu

Source: AIMS Mathematics. 2026, Vol. 11 Issue 4, p1-15. 15p.

High-Quality (0001) α-Ga 2 O 3 Film Grown by Mist Chemical Vapor Deposition on (0001) α-Cr 2 O 3 Template.

Authors: Yamada, Kotono Xiao, Shiyu Murakami, Kazuto et al.

Source: Crystals (2073-4352); Mar2026, Vol. 16 Issue 3, p193, 9p