Search Results - "Faraone L"

Electronic Transport in Ultra-Narrow-Bandgap InAs/InGaSb Superlattices on Conductive GaSb Substrates.

Authors: Umana-Membreno, G. A. Kala, H. Patrashin, M. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8286-8293, 8p

Investigation of Multicarrier Transport in LPE-Grown Hg1-xCdxTe Layers.

Authors: Umana-Membreno, G. A. Antoszewski, J. Faraone, L.

Source: Journal of Electronic Materials; July 2010, Vol. 39 Issue 7, p1023-1029, 7p

Application of Quantitative Mobility-Spectrum Analysis to Multilayer HgCdTe Structures.

Authors: Antoszewski, J. Faraone, L. Vurgaftman, I.

Source: Journal of Electronic Materials; Jun2004, Vol. 33 Issue 6, p673-683, 11p

HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications.

Authors: Umana-Membreno, G. A. Kala, H. Gu, R. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8363-8371, 9p

Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays.

Authors: Musca, C. A. Dell, J. M. Faraone, L.

Source: Journal of Electronic Materials; June 1999, Vol. 28 Issue 6, p617-623, 7p

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications.

Authors: Akhavan, N. D. Umana-Membreno, G. A. Gu, R. et al.

Source: Journal of Electronic Materials; Sep2022, Vol. 51 Issue 9, p4742-4751, 10p

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates.

Authors: Pan, W. W. Gu, R. J. Zhang, Z. K. et al.

Source: Journal of Electronic Materials; Sep2022, Vol. 51 Issue 9, p4869-4883, 15p

Strained CdZnTe/CdTe Superlattices As Threading Dislocation Filters in Lattice Mismatched MBE Growth of CdTe on GaSb.

Authors: Pan, W. W. Gu, R. J. Zhang, Z. K. et al.

Source: Journal of Electronic Materials; Nov2020, Vol. 49 Issue 11, p6983-6989, 7p

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications.

Authors: Akhavan, N. D. Umana-Membreno, G. A. Gu, R. et al.

Source: Journal of Electronic Materials; Oct2019, Vol. 48 Issue 10, p6159-6168, 10p

Optical Properties of MBE-Grown Hg1−xCdxSe.

Authors: Pan, W. W. Zhang, Z. K. Lei, W. et al.

Source: Journal of Electronic Materials; Oct2019, Vol. 48 Issue 10, p6063-6068, 6p

Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe.

Authors: Madni, I. Membreno, G. A. U. Lei, W. et al.

Source: Journal of Electronic Materials; Oct2018, Vol. 47 Issue 10, p5691-5698, 8p

Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy.

Authors: Antoszewski, J. Faraone, L.

Source: Journal of Applied Physics; October 1 1996, Vol. 80, p3881-3892, 12p

Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.

Authors: Lai, S. T. Nener, B. D. Faraone, L.

Source: Journal of Applied Physics; January 15 1993, Vol. 73, p640-647, 8p

Interface-state density analysis of thermally and electron-beam-annealed GaAs surfaces.

Authors: Prasad, K. Faraone, L. Nassibian, A. G.

Source: Journal of Applied Physics; May 15 1991, Vol. 69, p7146-7152, 7p

Numerical simulation of temperature distributions during electron beam annealing of multilayer semiconductor structures.

Authors: Meglicki, Z. Sumich, R. J. Faraone, L.

Source: Journal of Applied Physics; June 1 1990, Vol. 67, p7050-7058, 9p

Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.

Authors: Faraone, L.

Source: Solid-State Electronics; August 1981, Vol. 24, p709-716, 8p

Space-charge generation properties of gold in MOS structures.

Authors: Faraone, L.

Source: Journal of Applied Physics; September 1979, Vol. 50, p5865-5869, 5p

Magneto-transport characterization using quantitative mobility-spectrum analysis.

Authors: Antoszewski, J. Seymour, D. J. Faraone, L.

Source: Journal of Electronic Materials; September 1995, Vol. 24, p1255-1262, 8p

Passivation of Hg1-xCdxTe by photochemical native oxidation: quantitative analysis of oxide composition.

Authors: Winton, G. H. Faraone, L. Warrington, N.

Source: Journal of Electronic Materials; August 1995, Vol. 24, p1029-1037, 9p

Passivation of Hg1-xCdxTe by photochemical native oxidation: growth characteristics.

Authors: Winton, G. H. Prasad, K. Faraone, L.

Source: Journal of Electronic Materials; April 1993, Vol. 22, p365-373, 9p