Search Results - "Fastow, R."

Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.

Authors: Frau, Elise Sam-Giao, Diane Kerlain, Alexandre et al.

Source: Journal of Electronic Materials; Dec2024, Vol. 53 Issue 12, p8098-8107, 10p

Temperature-dependent analysis of dielectric behaviour of Co3O4/NiO nanocomposites with varying NiO concentration.

Authors: Gupta, Jhalak Ahmed, Arham Shareef

Source: Journal of Materials Science: Materials in Electronics; Nov2022, Vol. 33 Issue 31, p24182-24207, 26p

A Review of Cell Operation Algorithm for 3D NAND Flash Memory.

Authors: Park, Jong Kyung Kim, Sarah Eunkyung

Source: Applied Sciences (2076-3417); Nov2022, Vol. 12 Issue 21, p10697, 21p

Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.

Authors: Frau, Elise Sam-Giao, Diane Kerlain, Alexandre et al.

Source: Journal of Electronic Materials. Dec2024, Vol. 53 Issue 12, p8098-8107. 10p.

Subjects: Focal plane arrays sensors, Schottky barrier, P-type semiconductors, Activation energy, Values (Ethics), Ohmic contacts, Mercury (Element)

Temperature-dependent analysis of dielectric behaviour of Co3O4/NiO nanocomposites with varying NiO concentration.

Authors: Gupta, Jhalak Ahmed, Arham Shareef

Source: Journal of Materials Science: Materials in Electronics. Nov2022, Vol. 33 Issue 31, p24182-24207. 26p.

Subjects: Behavioral assessment, Permittivity, Nanocomposite materials, Binding energy, Fermi level, Polarons, Ionic conductivity, Dielectric relaxation, Dielectric loss

A new design of scanning IR detectors.

Authors: Dvoretsky, S. A. Kovchavtsev, A. P. Lee, I. I. et al.

Source: Opto-Electronics Review; 2020, Vol. 28 Issue 2, p93-98, 6p

1/ƒ noise and carrier transport mechanisms in InSb p+-n junctions.

Authors: Tetyorkin, V. V. Sukach, A. V. Tkachuk, A. I. et al.

Source: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2018, Vol. 21 Issue 4, p374-379, 6p

1/ƒ noise and carrier transport mechanisms in InSb p⁺-n junctions.

Authors: Tetyorkin, V. V. Sukach, A. V. Tkachuk, A. I. et al.

Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 4, p374-379. 6p.

Annealing of europium-implanted silicon by nanosecond ion-beam pulses.

Authors: Stepanov, A. L. Bayazitov, R. M. Khaibullin, I. B. et al.

Source: Philosophical Magazine Letters. Jan2001, Vol. 81 Issue 1, p29-38. 10p. 6 Graphs.

Chemical and Mechanical Engineering, Information Technologies

Authors: B. Li H.M. Zhang

Resource Type: eBook.

Subjects: Chemical engineering--Congresses, Materials science--Congresses, Information technology--Congresses

Categories: TECHNOLOGY & ENGINEERING / General