Search Results - "Field-effect transistors"

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures.

Authors: Moscotin, Maxim Jorudas, Justinas Prystawko, Pawel et al.

Source: Sensors (14248220). May2026, Vol. 26 Issue 9, p2701. 12p.

新型复合终端结构横向β-Ga2O3场效应晶体管电学 特性仿真研究.

Alternate Title: Simulation Study on Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga2O3 Field-Effect Transistors.

Authors: 李子唯 余建刚 刘晋花 et al.

Source: Journal of Synthetic Crystals. May2026, Vol. 55 Issue 5, p772-781. 10p.

Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.

Authors: Singla, Mehak Sharma, Neeraj Saini, Amit et al.

Source: Journal of Circuits, Systems & Computers; 7/15/2026, Vol. 35 Issue 11, p1-16, 16p

Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs.

Authors: Ma, Hui Gu, Senbiao Zhai, Minglong et al.

Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 11, p653. 13p.

Subjects: Carbon nanotube field effect transistors, Quantum tunneling, Transistors, Nanoelectronics, Single walled carbon nanotubes

A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS.

Authors: ZHAO, Chengzhuo LÜ, Fangxu XU, Weixia et al.

Source: Computer Engineering & Science / Jisuanji Gongcheng yu Kexue. May2026, Vol. 48 Issue 5, p770-778. 9p.

Subjects: Voltage references, Metal oxide semiconductor field-effect transistors, Thermal properties, Temperature effect, Analog circuits

Compact Analytical Model for a Raised Buried Oxide Ferroelectric TFET for RF/Analog Applications and Its Implementation as an Inverter.

Authors: Meriga, Sirisha Chowdary, M. Kalpana Bhowmick, Brinda et al.

Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5883-5900, 18p

Homogeneous and Heterogeneous Dual/Double Gate TFETs: Exploring High-k Materials and Thickness Variations.

Authors: KUMAR, CHINNALA PAVAN SIVANI, K. SOWJANYA, KOTTE et al.

Source: Journal of Active & Passive Electronic Devices; 2025, Vol. 19 Issue 1, p1-21, 21p

Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications.

Authors: Dutta, R. Das, D. De, R.

Source: Journal of Nano- & Electronic Physics; 2025, Vol. 17 Issue 3, p03014-1-03014-5, 5p

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.

Authors: Khan, Asir Intisar Kim, Jeong-Kyu Sikder, Urmita et al.

Source: Science. 7/31/2025, Vol. 389 Issue 6759, p508-511. 4p.

Design and testing of a pulsed laser system for single event effects analysis on semiconductor devices.

Authors: Elash, Christopher J. Pour-Momen, Peiman Shi, Shuting et al.

Source: Canadian Journal of Chemistry. 2025, Vol. 103 Issue 6, p270-279. 10p.

Design and Performance Analysis of Dielectrically Modulated Diagonal Tunneling TFET for Label Free Sensing.

Authors: Rao, I. Rama Satya Nageswara Karumuri, Srinivasa Rao Marconcini, Paolo

Source: IET Circuits, Devices & Systems (Wiley-Blackwell); 7/10/2026, Vol. 2026, p1-13, 13p

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels.

Authors: Kim, Yuseok So, Hee‐Soo Yoo, Minseok et al.

Source: Advanced Science. Jun2026, p1. 10p. 5 Illustrations.

Direct resist-free patterning of an organic semiconductor via thermal scanning probe lithography.

Authors: Luo, Kaimin Li, Jun Gu, Yanshu et al.

Source: Discover Nano; 6/21/2026, Vol. 21 Issue 1, p1-11, 11p

Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.

Authors: Atalla, Yousif Mamat, Mohamad Hafiz Hashim, Yasir

Source: Pertanika Journal of Science & Technology; Jun2026, Vol. 34 Issue 3, p1433-1449, 17p

Impact of Body Material on Electrical Characteristics of Raised Source Drain Double Gate JLFET.

Authors: R., Swargiary K. C. D., Sarma B. N., Thakur

Source: Journal of Nano- & Electronic Physics; 2026, Vol. 18 Issue 3, p03014-1-03014-5, 5p

State-of-the-Art Applications of Field-Effect Transistor Biosensors in Exosome Detection: A Comprehensive Review.

Authors: Sheng, Xinyi Zhang, Guo-Jun Zhou, Jie

Source: Biosensors (2079-6374); May2026, Vol. 16 Issue 5, p294, 34p

Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer.

Authors: Zhang, Wenting Shang, Junliang Li, Shuang et al.

Source: Applied Sciences (2076-3417); Mar2025, Vol. 15 Issue 5, p2278, 13p

Selective growth of single-crystal TIPS-pentacene on patterned PVDF-TrFE for geometry-controlled FeFETs with enhanced characteristics.

Authors: Bae, Insung Park, Cheolmin

Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-8. 8p.

Recent Progress in Ion-Sensitive Field Effect Transistor Technology: A Survey of Fabrication Methods and Applications.

Authors: Mohammed, Azzam Adnan Hussein, Shamil H. Yaseen, Mohammad T.

Source: Instrumentation, Mesures, Métrologies. Apr2026, Vol. 25 Issue 2, p71-84. 14p.

High-Performance Dynamic Feedback Controlbased 8T SRAM using CNTFET Technology.

Authors: Kumar, Abhishek Sharma, Vipin Kumar

Source: Serbian Journal of Electrical Engineering. Feb2026, Vol. 23 Issue 1, p147-161. 15p.

Subjects: Static random access memory, Carbon nanotube field effect transistors, Miniature electronic equipment, Very large scale circuit integration, Feedback control systems, Cost effectiveness of energy consumption