Search Results - "Germini F"

Defects in nanostructures with ripened InAs/GaAs quantum dots.

Authors: Nasi, L. Bocchi, C. Germini, F.

Source: Journal of Materials Science: Materials in Electronics; Oct2008 Supplement 1, Vol. 19, pS96-S100, 5p

Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system.

Authors: Bocchi, C. Franchi, S. Germini, F.

Source: Journal of Applied Physics; August 1 1999, Vol. 86 Issue 3, p1298-1305, 8p

Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system.

Authors: Germini, F. Bocchi, C. Ferrari, C.

Source: Journal of Physics: D Applied Physics; May 21 1999, Vol. 32, pA12-A15, 4p

Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system.

Authors: Bocchi, C. Franchi, S. Germini, F.

Source: Journal of Applied Physics; April 15 2001, Vol. 89 Issue 8, p4676-4678, 3p

Damage profiles determination in ultra-shallow B⁺ implanted Si by triple crystal X-ray diffraction and transmission electron microscopy

Authors: Bocchi, C. Germini, F. Mukhamedzhanov, E.Kh. et al.

Source: Materials Science & Engineering: B. Apr2002, Vol. 91/92, p457. 5p.

Subjects: Ion implantation, X-rays, Silicon

P4. Abstract Title: Prevalence of Pulmonary Embolism in Patients Accessing the Emergency Department, Reported by Country of Study: A Systematic Review and Meta-Analysis.

Authors: Germini, F. Zarabi, S. Eventov, M. et al.

Source: Thrombosis Research. Oct2019 Supplement 1, Vol. 182, p5-5. 1p.

P115: Improving the diagnosis of pulmonary embolism in the emergency department.

Authors: de Wit, K. Zarabi, S. Chan, T. et al.

Source: CJEM: Canadian Journal of Emergency Medicine. Supplement12020, Vol. 22 Issue s1, pS106-S106.

LO84: The incidence of fall-related intracranial bleeding in older adults taking anticoagulants, antiplatelets and neither medication: a meta-analysis.

Authors: de Wit, K. Nishijima, D. Mason, S. et al.

Source: CJEM: Canadian Journal of Emergency Medicine. Supplement12020, Vol. 22 Issue s1, pS38-S38.

Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

Authors: Attolini, G. Scardova, S. Germini, F. et al.

Source: Materials Science & Engineering: B. Apr2002, Vol. 91/92, p123. 5p.

Subjects: Alloys, Photoluminescence

Residual strain measurements in InGaAs metamorphic buffer layers on GaAs.

Authors: Bellani, V. Bocchi, C. Ciabattoni, T. et al.

Source: European Physical Journal B: Condensed Matter. Apr2007, Vol. 56 Issue 3, p217-222. 6p. 3 Graphs.

Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.

Authors: Frigeri, C. Attolini, G. Bosi, M. et al.

Source: Journal of Materials Science: Materials in Electronics. Oct2008 Supplement 1, Vol. 19, p107-110. 4p. 1 Chart, 4 Graphs.

Subjects: Metal organic chemical vapor deposition, Chemical vapor deposition, Contrast media, X-ray diffraction, Diagnostic imaging, Surface chemistry, Kinematics, Heterojunctions, Optical resolution

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Authors: Longo, M. Parisini, A. Tarricone, L. et al.

Source: Journal of Crystal Growth. Sep2009, Vol. 311 Issue 18, p4293-4300. 8p.

Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions

Authors: Frigeri, C. Attolini, G. Bosi, M. et al.

Source: Superlattices & Microstructures. Apr2009, Vol. 45 Issue 4/5, p451-457. 7p.

Morphology evolution and magnetic properties improvement in FePt epitaxial films by in situ annealing after growth.

Authors: Casoli, F. Nasi, L. Albertini, F. et al.

Source: Journal of Applied Physics. Feb2008, Vol. 103 Issue 4, p043912. 8p. 2 Color Photographs, 2 Black and White Photographs, 1 Chart, 5 Graphs.

Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures.

Authors: Frigeri, P. Nasi, L. Prezioso, M. et al.

Source: Journal of Applied Physics. Oct2007, Vol. 102 Issue 8, p083506. 8p. 2 Black and White Photographs, 1 Chart, 6 Graphs.

Influence of As incorporation on the deviation from Vegard's law in the Al[sub x]Ga[sub 1-x]Sb/GaSb system.

Authors: Bocchi, C. Franchi, S. Germini, F. et al.

Source: Journal of Applied Physics. 4/15/2001, Vol. 89 Issue 8. 1 Chart, 1 Graph.

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

Authors: Begotti, M. Longo, M. Magnanini, R. et al.

Source: Applied Surface Science. Jan2004, Vol. 222 Issue 1-4, p423-431. 9p.

Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction.

Authors: Frigeri, C. Attolini, G. Bosi, M. et al.

Source: Journal of The Electrochemical Society. 2009, Vol. 156 Issue 6, pH448-H452. 6p.

Subjects: X-ray diffraction, Transmission electron microscopy, Metal organic chemical vapor deposition, Heterostructures, Interfaces (Physical sciences), Gallium arsenide, Epitaxy, Indium

Study of structural transition from metastable zinc blende to rocksalt crystal in molecular beam epitaxy MgS/ZnSe/GaAs multilayer system.

Authors: Nasi, L. Bocchi, C. Catellani, A. et al.

Source: Applied Physics Letters. 9/10/2007, Vol. 91 Issue 11, p111908. 3p. 2 Black and White Photographs, 2 Graphs.

Italian version of the General Medication Adherence Scale (GMAS): translation, adaptation, and validation.

Authors: Napolitano D Bronzino A Lo Cascio A et al.

Source: Minerva gastroenterology [Minerva Gastroenterol (Torino)] 2025 Dec; Vol. 71 (4), pp. 304-314. Date of Electronic Publication: 2025 Oct 08.

Publication Type: Journal Article; Observational Study; Multicenter Study; Validation Study

Journal Info: Publisher: Minerva Medica Country of Publication: Italy NLM ID: 101777280 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2724-5365 (Electronic) Linking ISSN: 27245985 NLM ISO Abbreviation: Minerva Gastroenterol (Torino) Subsets: MEDLINE