Search Results - "Hatami F"

Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy.

Authors: Kim, S. M. Yuen, H. B. Hatami, F.

Source: Journal of Electronic Materials; December 2008, Vol. 37 Issue 12, p1774-1779, 6p

Local Ratcheting at the Notch Region of Non-Press-Fitted and Press-Fitted Al 7075-T6 Samples Undergoing Asymmetric Stress Cycles.

Authors: Hatami, F. Varvani-Farahani, A.

Source: Metals (2075-4701); Sep2023, Vol. 13 Issue 9, p1549, 18p

Low frequency noise in InSb/GaAs and InSb/Si channels.

Authors: Dobbert, J. Tran, L. Hatami, F.

Source: Applied Physics Letters; September 6 2010, Vol. 97 Issue 10, p102101-1-102101-3, 3p

Optical emission from ultrathin strained type-II InP/GaP quantum wells.

Authors: Hatami, F. Mussler, G. Schmidbauer, M.

Source: Applied Physics Letters; October 29 2001, Vol. 79 Issue 18, p2886-2888, 3p

Radiative recombination from InP quantum dots on (100) GaP.

Authors: Hatami, F. Masselink, W. T. Schrottke, L.

Source: Applied Physics Letters; April 9 2001, Vol. 78 Issue 15, p2163-2165, 3p

Interaction of primary cascades with different atomic grain boundaries in α-Zr: An atomic scale study.

Authors: Hatami, F. Feghhi, S.A.H. Arjhangmehr, A. et al.

Source: Journal of Nuclear Materials. Nov2016, Vol. 480, p362-373. 12p.

Subjects: Cascades (Fluid dynamics), Crystal grain boundaries, Zirconium compounds, Effective interactions (Nuclear physics), Ion bombardment, Crystal structure

Evaluation of composite shear wall behavior under cyclic loadings

Authors: Rahai, A. Hatami, F.

Source: Journal of Constructional Steel Research. Jul2009, Vol. 65 Issue 7, p1528-1537. 10p.

Subjects: Shear walls, Partitions (Building), Earthquake engineering, Strains & stresses (Mechanics)

Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate

Authors: Ugur, A. Hatami, F. Masselink, W.T.

Source: Journal of Crystal Growth. May2011, Vol. 323 Issue 1, p228-232. 5p.

Subjects: Molecular beam epitaxy, Quantum dots, Indium phosphide, Gallium arsenide, Optical properties of semiconductors, Nanostructured materials, Surfaces (Technology), Photoluminescence

A BAND SELECTION METHOD FOR SUB-PIXEL TARGET DETECTION IN HYPERSPECTRAL IMAGES BASED ON LABORATORY AND FIELD EFLECTANCE SPECTRAL COMPARISON.

Authors: hashjin, Sh. Sharifi Darvishi, A. khazai, S. et al.

Source: International Archives of the Photogrammetry, Remote Sensing & Spatial Information Sciences; 2016, Vol. 41 Issue B7, p117-120, 4p

GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission.

Authors: Dadgostar, S. Schmidtbauer, J. Boeck, T. et al.

Source: Applied Physics Letters; 3/7/2016, Vol. 108 Issue 10, p102103-1-102103-5, 5p, 5 Graphs

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Evidence of type-I direct recombination in InP/GaP quantum dots via magnetoluminescence.

Authors: Dewitz, C. V. Hatami, F. Millot, M.

Source: Applied Physics Letters; October 12 2009, Vol. 95 Issue 15, p151105-151105, 1p

Single-dot optical emission from ultralow density well-isolated InP quantum dots.

Authors: Ugur, A. Hatami, F. Masselink, W. T.

Source: Applied Physics Letters; October 6 2008, Vol. 93 Issue 14, p143111-143111, 1p

Nucleation of lateral compositional modulation in InGaP epitaxial films grown on (001) GaAs.

Authors: Schmidbauer, M. Ugur, A. Wollstein, C. et al.

Source: Journal of Applied Physics; Jan2012, Vol. 111 Issue 2, p024306, 5p, 2 Color Photographs, 1 Chart, 3 Graphs

Red light-emitting diodes based on InP/GaP quantum dots.

Authors: Hatami, F. Lordi, V. Harris, J. S.

Source: Journal of Applied Physics; May 1 2005, Vol. 97 Issue 9, p096108-096108, 1p

Growth of single quantum dots on preprocessed structures: Single photon emitters on a tip.

Authors: Zwiller, V. Aichele, T. Hatami, F.

Source: Applied Physics Letters; February 28 2005, Vol. 86 Issue 9, p091911-091911, 1p

Cryopreservation and Evaluation of Chinese Arbor-Vitae (Biota Orientalis) Seeds.

Authors: Shahab, M. Naderi Hatami, F. Tabari, M. et al.

Source: Journal of New Seeds. Oct-Dec2009, Vol. 10 Issue 4, p264-276. 13p. 1 Color Photograph, 5 Charts.

Shape induced anisotropic elastic relaxation in <fInP/In0.48Ga0.52Pf quantum dots

Authors: Schmidbauer, M. Hanke, M. Hatami, F. et al.

Source: Physica E; Mar2002, Vol. 13 Issue 2-4, p1139, 4p

Limit curves for brittle fracture in key-hole notches under mixed mode I/III loading based on stress-based criteria.

Authors: Hatami, F. Ayatollahi, M.R. Torabi, A.R.

Source: European Journal of Mechanics A: Solids. Jan2021, Vol. 85, pN.PAG-N.PAG. 1p.

Subjects: Brittle fractures, Notch effect, Curves, Fracture toughness, Brittle materials

Radiative recombination in type-II GaSb/GaAs quantum dots.

Authors: Hatami, F. Ledentsov, N.N.

Source: Applied Physics Letters; 7/31/1995, Vol. 67 Issue 5, p656, 3p, 1 Black and White Photograph, 4 Graphs