Search Results - "Humood, Khaled"

SPIKA: an energy-efficient time-domain hybrid CMOS-RRAM compute-in-memory macro.

Authors: Humood, Khaled Pan, Yihan Reynolds, Grahame et al.

Source: Frontiers in Electronics; 2025, p1-19, 19p

Energy-efficient analog-domain aggregator circuit for RRAM-based neural network accelerators.

Authors: Humood, Khaled Pan, Yihan Wang, Shiwei et al.

Source: Frontiers in Electronics; 2025, p1-11, 11p

Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices.

Authors: Humood, Khaled Saylan, Sueda Mohammad, Baker et al.

Source: Journal of Electronic Materials; Aug2021, Vol. 50 Issue 8, p4397-4406, 10p

On‐chip tunable Memristor‐based flash‐ADC converter for artificial intelligence applications.

Authors: Humood, Khaled Mohammad, Baker Abunahla, Heba et al.

Source: IET Circuits, Devices & Systems (Wiley-Blackwell). Jan2020, Vol. 14 Issue 1, p107-114. 8p.

Design of a low-power Digital-to-Pulse Converter (DPC) for in-memory-computing applications.

Authors: Humood, Khaled Pan, Yihan Wang, Shiwei et al.

Source: Microelectronics Journal. Nov2024, Vol. 153, pN.PAG-N.PAG. 1p.

Bipolar Cu/HfO2/p⁺⁺ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing.

Authors: Abdul Hadi, Sabina Humood, Khaled M. Abi Jaoude, Maguy et al.

Source: Scientific Reports. 7/10/2019, Vol. 9 Issue 1, pN.PAG-N.PAG. 1p.

Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode.

Authors: Humood, Khaled Saylan, Sueda Abi Jaoude, Maguy et al.

Source: Materials Science & Engineering: B. Sep2021, Vol. 271, pN.PAG-N.PAG. 1p.

Subjects: Electrodes, Silicon, Fibers, Passivation

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si.

Authors: Saylan, Sueda Aldosari, Haila M. Humood, Khaled et al.

Source: Scientific Reports. 11/11/2020, Vol. 10 Issue 1, pN.PAG-N.PAG. 1p.