Search Results - "Impurity-dislocation interactions"

Feasibility study into use of elemental impurities of sulfamide for use in characterizing different vendors by inductively coupled plasma/mass spectrometry.

Authors: Hondrogiannis, Ellen Schmidt, Andrew Iannaconi, Frank et al.

Source: Forensic Science International. 2013, Vol. 232 Issue 1-3, p56-59. 4p.

Subjects: Sulfamide, Impurity-dislocation interactions, Mass spectrometry, Neurotoxic agents, Feasibility studies

THEORETICAL APPROACH TOWARDS MORE GENERALIZED TUNNELING MODEL.

Authors: Tiwari, Raj Kumar¹ rktiwari2323@yahoo.co.in

Source: Bulletin of Pure & Applied Sciences-Physics. Dec2012, Vol. 31D Issue 2, p219-223. 5p.

First-principles calculations and experiments for Ce4+ effects on structure and chemical stabilities of Zr1-xCexSiO4.

Authors: Li, Shuyang Yang, Xiaoyong Liu, Jian et al.

Source: Journal of Nuclear Materials. Feb2019, Vol. 514, p276-283. 8p.

Subjects: Chemical bonds, Impurity-dislocation interactions, Structural stability, Chemical stability, Actinide elements

Following a Single Imperfection.

Authors: J. S.

Source: Science (pre-March 2025). 3/15/2013, Vol. 339 Issue 6125, p1255-1255. 1/6p.

Continuous-time hybridization expansion quantum impurity solver for multi-orbital systems with complex hybridizations.

Authors: Shinaoka, Hiroshi Gull, Emanuel Werner, Philipp

Source: Computer Physics Communications. Jun2017, Vol. 215, p128-136. 9p.

Subjects: Impurity-dislocation interactions, Impurity distribution in semiconductors, Monte Carlo method, Programming languages, Simulation methods & models

Correlation factors for impurity diffusion on the sublattice of dodecahedral sites in garnet.

Authors: Carlson, William Wilson, Clark

Source: Physics & Chemistry of Minerals. May2016, Vol. 43 Issue 5, p363-369. 7p.

Subjects: Correlation methods (Signal processing), Impurity-dislocation interactions, Garnet crystallography, Lattice constants, Monte Carlo method

Effect of impurity interaction on the corrosion film characteristics and corrosion morphology evolution of X65 steel in water-saturated supercritical CO2 system.

Authors: Sun, Chong Sun, Jianbo Wang, Yong et al.

Source: International Journal of Greenhouse Gas Control. Oct2017, Vol. 65, p117-127. 11p.

Subject Terms: Supercritical carbon dioxide, Impurity-dislocation interactions, Corrosion & anti-corrosives testing, Water-saturated sites (Archaeology), Steel pipe

A New Relationship Among Self- and Impurity Diffusion Coefficients in Binary Solution Phases.

Authors: Xin, Jinghua Du, Yong Shang, Shunli et al.

Source: Metallurgical & Materials Transactions. Part A; Jul2016, Vol. 47 Issue 7, p3295-3299, 5p

First-principles study of the electronic structures and optical properties of Cr²⁺-doped ZnSe as a function of impurity concentration.

Authors: Zhang, Yuqin Feng, Guoying Dai, Shenyu et al.

Source: Physica Status Solidi (B). Jun2016, Vol. 253 Issue 6, p1133-1137. 5p.

On charged impurity structures in liquid helium.

Authors: Pelmenev, A. A. Krushinskaya, I. N. Bykhalo, I. B. et al.

Source: Low Temperature Physics. Mar2016, Vol. 42 Issue 3, p224-229. 6p. 1 Diagram, 3 Graphs.

Variational exact diagonalization method for Anderson impurity models.

Authors: Schüler, M. Renk, C. Wehling, T. O.

Source: Physical Review B: Condensed Matter & Materials Physics. Jun2015, Vol. 91 Issue 23, p235142-1-235142-9. 9p.

Fano-Kondo Effect of Magnetic Impurity with Side-Coupled Graphene Flake.

Authors: KRYCHOWSKI, D. KOPIŃSKI, J. LIPIŃSKI, S.

Source: Acta Physica Polonica: A. Jul2014, Vol. 126 Issue 1, p202-203. 2p.

A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.

Authors: Marchenko, A. Anisimova, N. Naletko, A. et al.

Source: Glass Physics & Chemistry. May2013, Vol. 39 Issue 3, p287-293. 7p.

Subjects: Tin isotopes, Tin compounds, Impurity-dislocation interactions, Amorphous silicon, Mössbauer spectroscopy, Atoms, Crystallography

Electron spin resonance spectroscopy of small ensemble paramagnetic spins using a single nitrogen-vacancy center in diamond.

Authors: Abeywardana, Chathuranga Stepanov, Viktor Cho, Franklin H. et al.

Source: Journal of Applied Physics; 2016, Vol. 120 Issue 12, p123907-1-123907-7, 7p, 1 Diagram, 2 Charts, 2 Graphs

Effects of Mg and Al doping on dislocation slips in GaN.

Authors: Cheng Chen Fanchao Meng Jun Song

Source: Journal of Applied Physics; 2/14/2016, Vol. 119 Issue 6, p1-8, 8p, 3 Color Photographs, 1 Chart, 7 Graphs

Impurity screening behavior of the high-field side scrape-off layer in near-double-null configurations: prospect for mitigating plasma–material interactions on RF actuators and first-wall components.

Authors: B. LaBombard A.Q. Kuang D. Brunner et al.

Source: Nuclear Fusion. July2017, Vol. 57 Issue 7, p1-1. 1p.

Subjects: Plasma impurities, Impurity-dislocation interactions, Plasma boundary layers, Plasma sheaths, Plasma-wall interactions

Quantitative measurement of crystalline impurity in a pharmaceutical tablet by X-ray powder diffraction and method validation.

Authors: Casella, R. Boudreau, S. Wesley, James A. et al.

Source: Powder Diffraction; Sep2013, Vol. 28 Issue 3, p222-230, 9p

The roles of shallow and deep levels in the recombination behavior of polycrystalline silicon on glass solar cells.

Authors: Wong, Johnson Huang, Jialiang Varlamov, Sergey et al.

Source: Progress in Photovoltaics; Dec2012, Vol. 20 Issue 8, p915-922, 8p

Capture dynamics of ultracold atoms in the presence of an impurity ion.

Authors: J M Schurer A Negretti P Schmelcher

Source: New Journal of Physics. Aug2015, Vol. 17 Issue 8, p1-1. 1p.

Subjects: Impurity-dislocation interactions, Ultracold molecules, Bosons, Transmutation (Chemistry), Analytical mechanics

Theoretical study of the effects of vacancy and oxygen impurity on Ti2GaC).

Authors: Chen Jun-Jun Duan Ji-Zheng Zhao Da-Qiang et al.

Source: Chinese Physics B. Aug2015, Vol. 24 Issue 8, p1-1. 1p.

Subjects: Vacancy-dislocation interactions, Impurity-dislocation interactions, Oxygen evolution reactions, Covalent bonds, Metallic bonds, Titanium compounds synthesis