Search Results - "Intermodulation distortion"

Two-Tone IMD3 and IMD5 Models of Weakly Nonlinear GaN Amplifier for Tx-Rx Microwave and Millimeter-Wave Systems.

Authors: Li, Jiahao Wan, Fayu Wan, Junkun et al.

Source: Progress in Electromagnetics Research C. 2026, Vol. 168, p278-287. 10p.

Subjects: Intermodulation distortion, Microwave amplifiers, Millimeter wave communication systems, Microwave communication systems

Enhanced Linearity of 5 GHz GaN Power Amplifiers Using Derivative Superposition Approach.

Authors: Elmouftih, Abderrahim El Bakkali, Moustapha Touhami, Naima Amar et al.

Source: International Journal of Microwave & Optical Technology; Mar2026, Vol. 21 Issue 2, p191-198, 8p

Understanding Third-Order Intermodulation Distortion Dynamic Range in HF Receivers: The final installment of a three-part series explaining receiver dynamic range measurements performed by the ARRL Lab.

Authors: Guzick, Maury, w5io@sbcglobal.net

Source: QST (0033-4812); Jul2026, Vol. 110 Issue 7, p41-43, 3p

Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications.

Authors: Singh, Sheetal Wairya, Subodh

Source: Semiconductors. Jul2025, Vol. 59 Issue 7, p650-660. 11p.

Subjects: Field-effect transistors, Intermodulation distortion, Stray currents, Radio frequency, Dielectrics

Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET.

Authors: Bhardwaj, Anjana Das, Amit Rai, Amrita et al.

Source: Semiconductors. May2025, Vol. 59 Issue 5, p474-482. 9p.

Subjects: Tunnel field-effect transistors, Intermodulation distortion, Semiconductor industry, Aluminum oxide, Oxides

A Distinctive Parallel R–C Matching Technique for Nonlinearity Reduction in GaN MMIC PA for FMCW Radar Applications.

Authors: Karmakar, Indranil Chauhan, Ashok Singh, Kuldip et al.

Source: International Journal of Numerical Modelling. Mar/Apr2026, Vol. 39 Issue 2, p1-18. 18p.

Subjects: Intermodulation distortion, Continuous wave radar, Power amplifiers, Phase distortion (Electronics)

Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein.

Authors: T, Ranjith Kumar G, Lakshmi Priya

Source: Scientific Reports. 7/5/2025, Vol. 15 Issue 1, p1-24. 24p.

A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification.

Authors: Patil, Mahalaxmi Sheikh, Aaqib H. Khalid, Nashra et al.

Source: APL Electronic Devices. Jun2025, Vol. 1 Issue 2, p1-7. 7p.

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Authors: Chowdhury, Dibyendu DasMahapatra, Suddhendu De, Bishnu Prasad et al.

Source: Journal of Electronic Materials; May2025, Vol. 54 Issue 5, p3480-3493, 14p

Performance analysis of DP-MZM based RoF network for 5G/6G.

Authors: Tyagi, Sachin Kumar Mittal, Poornima Kumar, Parvin

Source: Frequenz; Jun2026, Vol. 80 Issue 5/6, p231-235, 5p

Enhancement of Linearity and Flatness in Broadband Power Amplifiers via Baseband Impedance Optimization.

Authors: Liu, Wenjin Jiang, Hai Nan, Jingchang

Source: International Journal of Circuit Theory & Applications; Jun2026, Vol. 54 Issue 6, p3474-3483, 10p

X-대역 데이터링크용 고집적 CMOS RF 송수신 IC. (Korean)

Authors: 장원일 김용호 정구 et al.

Source: Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; May2026, Vol. 37 Issue 5, p434-444, 11p

Radiation Pattern Prediction for Third‐Order Intermodulation of the Reconfigurable Reflectarray Antenna With Embedded Varactor.

Authors: Tang, Xianli Jia, Yonghao Xu, Yuehang et al.

Source: International Journal of Numerical Modelling. Jan/Feb2026, Vol. 39 Issue 1, p1-12. 12p.

Subjects: Reflectarray antennas, Intermodulation distortion, Varactors, Computational electromagnetics, Wireless communications, Simulation methods & models

Thermal-Aware Co-Design of GaN-Based Power Amplifiers for High-Linearity 6G Sub-THz Transceivers.

Authors: C., Rajan¹, rajan@ksrct.ac.in

Source: National Journal of RF Circuits & Wireless Systems; 2026, Vol. 3 Issue 3, p1-8, 8p

A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS.

Authors: Shen, Haoyu Wu, Bin

Source: Applied Sciences (2076-3417); Dec2024, Vol. 14 Issue 23, p10768, 19p

A 60-GHz Current Combining Class-AB Power Amplifier in 22 nm FD-SOI CMOS.

Authors: Georgakopoulos, Dimitrios Manouras, Vasileios Papananos, Ioannis

Source: Microwave; Mar2026, Vol. 2 Issue 1, p2, 29p

Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.

Authors: Ramya, R. Piramasubramanian, S. Madhan, M. Ganesh

Source: Applied Physics B: Lasers & Optics. Jun2024, Vol. 130 Issue 6, p1-11. 11p.

Subjects: Transistors, Intermodulation distortion, Equations of state, Electric fields, Intermodulation

Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.

Authors: Sultana, Sadia Naima, Jannatul Alam, Md. Shamsul et al.

Source: International Journal of Numerical Modelling. Jul2024, Vol. 37 Issue 4, p1-14. 14p.

Subjects: Intermodulation distortion, Indium gallium arsenide, Electrostatics, Gallium arsenide, Auditing standards

APD–SSPP: Enhancing Linearization of Power Amplifier Using Spoof Surface Plasmon Polariton Propagation.

Authors: Kumari, Hemant Paul, Amartya Bhargava, Gaurav et al.

Source: Microwave & Optical Technology Letters. Oct2025, Vol. 67 Issue 10, p1-13. 13p.

Subjects: Power amplifiers, Intermodulation distortion, Polaritons, Harmonic suppression filters, Signal processing, Radio frequency, Impedance matching

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.

Authors: Ahn, Hyunjin Oh, Kyutaek Choi, Se-Eun et al.

Source: Nanomaterials (2079-4991). Feb2024, Vol. 14 Issue 3, p262. 13p.

Subjects: CMOS amplifiers, Intermodulation distortion, Quadrature phase shift keying, Power amplifiers