Search Results - "Irrera, Fernanda"

Multisensor Integrated Platform Based on MEMS Charge Variation Sensing Technology for Biopotential Acquisition.

Authors: Irrera, Fernanda Gumiero, Alessandro Zampogna, Alessandro et al.

Source: Sensors (14248220). Mar2024, Vol. 24 Issue 5, p1554. 20p.

Detrapping dynamics in Al2O3 metal-oxide-semiconductor.

Authors: Rao, Rosario Irrera, Fernanda

Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p103708-1-103708-6, 6p

Impact of Pulsed Operation on Performance and Reliability of Flash Memories.

Authors: Chimenton, Andrea Irrera, Fernanda Olivo, Piero

Source: IEEE Transactions on Electron Devices; June 2007, Vol. 54 Issue 6, p1454-1458, 5p

Engineered Barriers With Hafnium Oxide for Nonvolatile Application.

Authors: Irrera, Fernanda

Source: IEEE Transactions on Electron Devices; September 2006, Vol. 53 Issue 9, p2418-2422, 5p

Data Retention of Silicon Nanocrystal Storage Nodes Programmed With Short Voltage Pulses.

Authors: Puzzilli, Giuseppina Irrera, Fernanda

Source: IEEE Transactions on Electron Devices; April 2006, Vol. 53 Issue 4, p775-781, 7p

Pulsed Tunnel Programming of Nonvolatile Memories.

Authors: Irrera, Fernanda Riccò, Bruno

Source: IEEE Transactions on Electron Devices; December 2003, Vol. 50 Issue 12, p2474-2480, 7p

SILC Dynamics in MOS Structures Subject to Periodic Stress.

Authors: Irrera, Fernanda Riccò, Bruno

Source: IEEE Transactions on Electron Devices; October 2002, Vol. 49 Issue 10, p1729-1735, 7p

Investigation of defects in deposited oxides with a frequency resolved capacitance technique.

Authors: Caputo, Domenico Irrera, Fernanda Palma, Fabrizio

Source: IEEE Transactions on Electron Devices; October 2001, Vol. 48 Issue 10, p2342-2347, 6p

Transport model in n++-poly/SiOx/SiO2p-sub MOS capacitors for low-voltage nonvolatile memory applications.

Authors: Irrera, Fernanda Marangelo, Luca

Source: IEEE Transactions on Electron Devices; February 2000, Vol. 47 Issue 2, p372-377, 6p

On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon.

Authors: Irrera, Fernanda

Source: Journal of Applied Physics; February 1 1994, Vol. 75, p1396-1400, 5p

Toward an analytical solution of the hydrogenated amorphous silicon p-i-n structure: hyperbolic approximation of nonuniform electric field.

Authors: Irrera, Fernanda Palma, Fabrizio

Source: Journal of Applied Physics; October 15 1989, Vol. 66, p3661-3665, 5p

Thin-film photodetectors for the vacuum ultraviolet spectral region.

Authors: De Cesare, Giampiero Irrera, Fernanda Palma, Fabrizio

Source: Applied Optics; May 1 1997, Vol. 36, p2751-2754, 4p

Enhanced injection in n++ -poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment.

Authors: Irrera, Fernanda Russo, Felice

Source: IEEE Transactions on Electron Devices; December 1999, Vol. 46 Issue 12, p2315-2322, 8p

Transient behavior of adjustable threshold a-Si:H/a-SiC:H three-color detector.

Authors: Irrera, Fernanda Lemmi, Francesco Palma, Fabrizio

Source: IEEE Transactions on Electron Devices; September 1997, Vol. 44, p1410-1416, 7p

Characterization of planar Ti:LiNbO3 optical waveguides in the visible and near-infrared spectral range.

Authors: Irrera, Fernanda Valli, Marco

Source: Journal of Applied Physics; August 15 1988, Vol. 64, p1704-1708, 5p

Trapping in high-k dielectrics.

Authors: Rao, Rosario Simoncini, Riccardo Irrera, Fernanda

Source: Applied Physics Letters; October 18 2010, Vol. 97 Issue 16, p163502-1-163502-3, 3p

Degradation kinetics of thermal oxides.

Authors: Irrera, Fernanda

Source: Applied Physics Letters; July 9 2001, Vol. 79 Issue 2, p182-184, 3p

Improved measurements of the stimulated Raman scattering spectrum generated in a single mode fiber at λ=1.064 μm in continuous-wave regime.

Authors: Irrera, Fernanda Pozza, Davide

Source: Journal of Applied Physics; November 1 1988, Vol. 64, p4790-4792, 3p

Electrical spin-wave spectroscopy in nanoscale waveguides with nonuniform magnetization.

Authors: Talmelli, Giacomo Narducci, Daniele Vanderveken, Frederic et al.

Source: Applied Physics Letters; 4/21/2021, Vol. 118 Issue 15, p1-5, 5p

On Border Traps in Back-Side-Illuminated CMOS Image Sensor Oxides.

Authors: Vici, Andrea Russo, Felice Lovisi, Nicola et al.

Source: IEEE Transactions on Electron Devices; May2020, Vol. 67 Issue 5, p2022-2027, 6p