Search Results - "Keyes B"

Evolution/Role of Lesson Plans in Instructional Planning.

Authors: Kelly, Keyes B.

Peer Reviewed: N

Page Count: 34

Descriptors: Diversity (Student), Elementary Secondary Education, Higher Education, Instructional Development, Lesson Plans, Limited English Speaking, Preservice Teacher Education, Prior Learning

Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth.

Authors: Keyes, B. M. Dippo, P. Metzger, W. K.

Source: Journal of Applied Physics; November 1 2003, Vol. 94 Issue 9, p5584-5591, 8p

Minority-carrier lifetime damage coefficient of irradiated InP.

Authors: Keyes, B. M. Ahrenkiel, R. K. Shaw, G. J.

Source: Journal of Applied Physics; September 1 1997, Vol. 82, p2156-2163, 8p

A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition.

Authors: Lush, G. B. MacMillan, H. F. Keyes, B. M.

Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1436-1442, 7p

Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.

Authors: Ahrenkiel, R. K. Keyes, B. M. Dunlavy, D. J.

Source: Journal of Applied Physics; July 1 1991, Vol. 70, p225-231, 7p

Minority carrier lifetime of GaAs on silicon.

Authors: Ahrenkiel, R. K. Al-Jassim, M. M. Keyes, B.

Source: Journal of the Electrochemical Society; March 1990, Vol. 137, p996-1000, 5p

Fragmentation of aliphatic sulfur compounds by electron impact.

Authors: Keyes, B. G. Harrison, A. G.

Source: Journal of the American Chemical Society; October 9 1968, Vol. 90, p5671-5676, 6p

Effect of growth rate and gallium source on GaAsN.

Authors: Kurtz, Sarah Geisz, J. F. Keyes, B. M.

Source: Applied Physics Letters; April 21 2003, Vol. 82 Issue 16, p2634-2636, 3p

Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition.

Authors: Ahrenkiel, R. K. Johnston, S. W. Keyes, B. M.

Source: Applied Physics Letters; 7/17/2000, Vol. 77 Issue 3, p3794-3796, 3p

Time-resolved photoluminescence of undoped InP.

Authors: Keyes, B. M. Dunlavy, D. J. Ahrenkiel, R. K.

Source: Journal of Applied Physics; April 15 1994, Vol. 75, p4249-4251, 3p

Minority-carrier lifetime in AlxGa1-xAs grown by molecular-beam epitaxy.

Authors: Ahrenkiel, R. K. Keyes, B. M. Shen, T. C.

Source: Journal of Applied Physics; March 1 1991, Vol. 69, p3094-3096, 3p

Structure of the C2H5O+ ion in the mass spectra of 2-alkanols.

Authors: Harrison, A. G. Keyes, B. G.

Source: Journal of the American Chemical Society; August 28 1968, Vol. 90, p5046-5047, 2p

Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cells.

Authors: Repins, I. L. Stanbery, B. J. Young, D. L. et al.

Source: Progress in Photovoltaics; Jan2006, Vol. 14 Issue 1, p25-43, 19p

Time-resolved photoluminescence studies of CdTe solar cells.

Authors: Metzger, W. K. Albin, D. Levi, D. et al.

Source: Journal of Applied Physics; 9/1/2003, Vol. 94 Issue 5, p3549, 7p, 1 Diagram, 6 Graphs

Continuous molding of petroleum waxes.

Authors: Keyes, B.

Source: Oil & Gas Journal; April 14 1952, Vol. 50, p128

Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescence.

Authors: Timmons, M. L. Colpitts, T. S. Venkatasubramanian, R. et al.

Source: Applied Physics Letters; 5/7/1990, Vol. 56 Issue 19, p1850, 3p

ODE-IVP-PACK via Sinc indefinite integration and Newton's method.

Authors: Stenger, F. Gustafson, S. Å. Keyes, B. et al.

Source: Numerical Algorithms. Aug1999, Vol. 20 Issue 2/3, p241-268. 28p.

A comparative study of the assessment practices utilized by full -time faculty and adjunct instructors in preservice teacher education courses

Authors: Kelly, Keyes B.

Committee Members: Dennis Brennan

URL: https://scholarlycommons.pacific.edu/uop_etds/2547

Erratum: "Transport properties of GaAs[sub 1-x]N[sub x] thin films grown by metalorganic chemical vapor deposition" [Appl. Phys. Lett. 77, 3794 (2000)].

Authors: Ahrenkiel, R. K. Johnston, S. W. Keyes, B. M. et al.

Source: Applied Physics Letters; 1/22/2001, Vol. 78 Issue 4, p559, 1p

Transport properties of GaAs[sub 1-x]N[sub x] thin films grown by metalorganic chemical vapor deposition.

Authors: Ahrenkiel, R. K. Ahrenkiel, R.K. Johnston, S. W. et al.

Source: Applied Physics Letters; 12/4/2000, Vol. 77 Issue 23