Search Results - "Lai, Tianshu"

THz emission driven by inverse orbital Hall effect in Te/Fe3GaTe2 heterostructures.

Authors: Hu, Yunzhen Jiang, Tianran Chen, Jiali et al.

Source: Applied Physics Letters; 7/6/2026, Vol. 129 Issue 1, p1-7, 7p

Experimental evidence of strong intrinsic defect-induced phonon scattering in 2D non-layered β-In2S3.

Authors: Lin, Ziqi Lu, Jialin Chen, Yicun et al.

Source: Applied Physics Letters; 4/13/2026, Vol. 128 Issue 15, p1-6, 6p

Characterization of thermal boundary conductance of 2D–3D van der Waals interface using wideband transducerless frequency-domain thermoreflectance.

Authors: Lu, Jialin Xie, Zhikun Chen, Runming et al.

Source: Journal of Applied Physics; 9/14/2025, Vol. 138 Issue 10, p1-12, 12p

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In 2 Se 3 Interlayers.

Authors: Su, Feng Hu, Yifeng Zhu, Xiaoqin et al.

Source: Coatings (2079-6412); May2023, Vol. 13 Issue 5, p927, 11p

Ultra‐Efficient Passive Daytime Radiative Cooling Enabled by Dual‐Selective Inorganic SiO2/Si3N4 Photonic Emitter.

Authors: Cheng, Lulu Chen, Houhong Cai, Qiyu et al.

Source: Laser & Photonics Reviews; 6/18/2025, Vol. 19 Issue 12, p1-9, 9p

Ultrafast Exciton and Spin Dynamics of Monolayer MoSi2N4 Studied by Non‐Degenerate Pump‐Probe Transient Transmission Spectroscopy.

Authors: Wu, Huiping Sun, Su Xu, Chuan et al.

Source: Advanced Science; 5/8/2025, Vol. 12 Issue 17, p1-9, 9p

Qualitative Identification of the Spin‐to‐Orbital Conversion Mechanism Modulated by Rare‐Earth Nd, Gd, and Ho Metals via Terahertz Emission Measurements.

Authors: Liu, Long Jiang, Tianran Zhao, Xiaotian et al.

Source: Advanced Functional Materials; 12/23/2024, Vol. 34 Issue 52, p1-8, 8p

Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film.

Authors: Sun, Song Hu, Yifeng Lai, Tianshu et al.

Source: Journal of Materials Science: Materials in Electronics; Mar2021, Vol. 32 Issue 5, p6408-6413, 6p

Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.

Authors: XU, YONGKANG HU, YIFENG SUN, SONG et al.

Source: Journal of Electronic Materials; 2021, Vol. 50 Issue 2, p491-496, 6p, 1 Color Photograph, 4 Graphs

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application.

Authors: Sun, Song Hu, Yifeng Lai, Tianshu et al.

Source: Journal of Materials Science: Materials in Electronics; Aug2020, Vol. 31 Issue 15, p12476-12481, 6p

Improved thermal stability and contact of antimony film by the interlayer HfO2.

Authors: Xu, Junbo Hu, Yifeng Lai, Tianshu et al.

Source: Journal of Materials Science: Materials in Electronics; May2020, Vol. 31 Issue 10, p8052-8058, 7p

Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application.

Authors: Sun, Song Hu, Yifeng Xu, Yongkang et al.

Source: Journal of Electronic Materials; Feb2020, Vol. 49 Issue 2, p980-984, 5p

Realization of multi-level phase-change in Sb7Se3/Ge50Te50 bilayer films via decoupling interlayer coupling between Sb7Se3 and Ge50Te50 layers.

Authors: Liu, Ling Gu, Han Wu, WeiHua et al.

Source: Applied Physics Letters; 5/20/2024, Vol. 124 Issue 21, p1-6, 6p

Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films.

Authors: Guo, Xuan Hu, Yifeng Chou, Qingqian et al.

Source: Journal of Materials Science: Materials in Electronics; Nov2019, Vol. 30 Issue 21, p19302-19308, 7p

SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications.

Authors: Zhao, Zihan Hua, Sicong Shen, Bo et al.

Source: Journal of Materials Science: Materials in Electronics; Aug2019, Vol. 30 Issue 16, p15024-15030, 7p

Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory.

Authors: Guo, Xuan Hu, Yifeng Chou, Qingqian et al.

Source: Journal of Materials Science: Materials in Electronics; Oct2018, Vol. 29 Issue 19, p16172-16177, 6p

Recordable depth of view and allowable farthest far-field distance of in-line far-field holography for micro-object analysis.

Authors: Lai, Tianshu Lin, Weizhu

Source: Applied Optics; July 1 1997, Vol. 36, p4419-4424, 6p

Effective implementation of subtraction holography for noise suppression in particle fields.

Authors: Lai, Tianshu Lin, Weizhu

Source: Applied Optics; August 1 1996, Vol. 35, p4334-4336, 3p

Individual contribution of electrons and holes to photocarrier-induced bandgap renormalization in intrinsic bulk GaAs.

Authors: Chen, Yicun Lu, Haiming Lai, Tianshu

Source: Journal of Applied Physics; 9/21/2020, Vol. 128 Issue 11, p1-7, 7p

High thermal stability and low power dissipation PCM with nanoscale oxygen‐doped SS thin film.

Authors: You, Haipeng Hu, Yifeng Lai, Tianshu et al.

Source: IET Nanobiotechnology (Wiley-Blackwell); Dec2018, Vol. 12 Issue 8, p1080-1083, 4p