Search Results - "Lim, Taebin"

P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.

Authors: Lim, Taebin Jae Kim, Young Sun, Jiwon et al.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p

Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.

Authors: Lee, Solbee Lim, Taebin Priyadarshi, Sunaina et al.

Source: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p

A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure.

Authors: Lee, Heonbang Islam, Md Mobaidul Bae, Jinbaek et al.

Source: Advanced Materials Technologies; 4/4/2025, Vol. 10 Issue 7, p1-10, 10p

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display.

Authors: Rabbi, Md. Hasnat Bae, Jinbaek Lim, Taebin et al.

Source: SID Symposium Digest of Technical Papers; Jun2023, Vol. 54 Issue 1, p1144-1146, 3p

Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering.

Authors: Lim, Taebin Lee, Jiseob Woo, Dong Yeon et al.

Source: Small Methods; Sep2023, Vol. 7 Issue 9, p1-9, 9p

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.

Authors: Lim, Taebin Lee, Suhui Lee, Jiseob et al.

Source: Advanced Functional Materials; 2/16/2023, Vol. 33 Issue 8, p1-12, 12p

High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.

Authors: Sun, Jiwon Bae, Jinbaek Lim, Taebin et al.

Source: Physica Status Solidi. A: Applications & Materials Science. Jun2025, Vol. 222 Issue 11, p1-9. 9p.

A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure.

Authors: Lee, Heonbang Islam, Md Mobaidul Bae, Jinbaek et al.

Source: Advanced Materials Technologies. 4/4/2025, Vol. 10 Issue 7, p1-10. 10p.

Flexible Temperature Sensor with 2D In2Se3 Ferroelectric-Semiconductor Field Effect Transistor Exhibiting Record High Sensitivity.

Authors: Lim T Lee J Jang J

Source: Small (Weinheim an der Bergstrasse, Germany) [Small] 2025 Mar; Vol. 21 (12), pp. e2410853. Date of Electronic Publication: 2025 Feb 11.

Publication Type: Journal Article

Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: MEDLINE; PubMed not MEDLINE

Polycrystalline InGaO Thin-Film Transistor with SiO2 Gate Insulator for High-Performance Artificial Synapses.

Authors: Lim T Lee S Wi H et al.

Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2026 Jan 14; Vol. 18 (1), pp. 2056-2068. Date of Electronic Publication: 2026 Jan 05.

Publication Type: Journal Article

Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE

Highly Stable, Crystalline InGaO Thin-Film Transistors by 7% Lanthanum Incorporation.

Authors: Bae J Ahn K Jeong M et al.

Source: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2025 Apr 23; Vol. 17 (16), pp. 24116-24128. Date of Electronic Publication: 2025 Apr 14.

Publication Type: Journal Article

Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE; PubMed not MEDLINE

Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory.

Authors: Lim T Lee JH Kim D et al.

Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Jan; Vol. 36 (4), pp. e2308301. Date of Electronic Publication: 2023 Dec 03.

Publication Type: Journal Article

Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE