Search Results - "Lim, Taebin"

P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.

Authors: Lim, Taebin Jae Kim, Young Sun, Jiwon et al.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p

Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.

Authors: Lee, Solbee Lim, Taebin Priyadarshi, Sunaina et al.

Source: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p

81‐4: High Performance Coplanar Polycrystalline InGaO TFTs on Polyimide Substrate for Foldable AMOLED Display.

Authors: Rabbi, Md. Hasnat Bae, Jinbaek Lim, Taebin et al.

Source: SID Symposium Digest of Technical Papers; Jun2023, Vol. 54 Issue 1, p1144-1146, 3p

A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure.

Authors: Lee, Heonbang Islam, Md Mobaidul Bae, Jinbaek et al.

Source: Advanced Materials Technologies; 4/4/2025, Vol. 10 Issue 7, p1-10, 10p

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.

Authors: Lim, Taebin Lee, Suhui Lee, Jiseob et al.

Source: Advanced Functional Materials; 2/16/2023, Vol. 33 Issue 8, p1-12, 12p

Issue Information.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, pi-lxiv, 1p

Issue Information.

Source: SID Symposium Digest of Technical Papers; Jun2023, Vol. 54 Issue 1, pi-lii, 1p