Search Results - "Liu, Li-Jung"

Effect of Screen Printing Methods on Titanium Dioxide Films Modified with Silver Nanoparticles to Improve Dye-Sensitized Solar Cell Performance.

Authors: Tsai, Jenn-Kai Liu, Li-Jung Liao, Yu-Jie et al.

Source: Coatings (2079-6412); Dec2025, Vol. 15 Issue 12, p1421, 14p

Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Jian, Yi-Chuen et al.

Source: Thin Solid Films. Apr2013, Vol. 533, p1-4. 4p.

Subjects: Flash memory, Quantum tunneling, Hot carriers, Superlattices, Silicon, Germanium, Crystal structure

Enhanced operation and retention characteristics in charge-trapping flash memory device with a novel Si/Ge super-lattice channel

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Jian, Yi-Chuen et al.

Source: Microelectronic Engineering. Jul2011, Vol. 88 Issue 7, p1159-1163. 5p.

Subjects: Flash memory, Ion traps, Germanium, Quantum tunneling, Oxides, Electric charge, Silicon, Superlattices

Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Wu, Tai-Yu et al.

Source: Microelectronic Engineering. Jul2009, Vol. 86 Issue 7-9, p1852-1855. 4p.

Subjects: Flash memory, Electric charge, Surface analysis, Ion implantation, Plasma gases, Computer programming, Dielectric devices, Silicon nitride

Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Keng, Wen-Chun et al.

Source: Solid-State Electronics. Oct2010, Vol. 54 Issue 10, p1113-1118. 6p.

Subjects: Flash memory, Ion channels, Silicon compounds, Secondary ion mass spectrometry, Electric charge, Diffusion, Mass spectrometry, Random access memory, Active biological transport

Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2 Stack Gate Dielectric.

Authors: Li, Chen-Chien Chang-Liao, Kuei-Shu Chi, Wei-Fong et al.

Source: IEEE Electron Device Letters; Jan2016, Vol. 37 Issue 1, p12-15, 4p

Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel.

Authors: Ye, Zong-Hao Chang-Liao, Kuei-Shu Liu, Li-Jung et al.

Source: IEEE Electron Device Letters; Dec2015, Vol. 36 Issue 12, p1314-1317, 4p

The structural transition from epitaxial Fe/Pt multilayers to an ordered FePt film using low energy ion beam sputtering deposition with no buffer layer.

Authors: Lee, Chih-Hao Chen, Yu-Sheng Liu, Li-Jung et al.

Source: Thin Solid Films; Nov2014 Part B, Vol. 570, p288-292, 5p

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality HfxGeyO Interfacial Layer.

Authors: Fu, Chung-Hao Chang-Liao, Kuei-Shu Liu, Li-Jung et al.

Source: IEEE Transactions on Electron Devices; Aug2014, Vol. 61 Issue 8, p2662-2667, 6p

Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel.

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Jian, Yi-Chuen et al.

Source: IEEE Electron Device Letters. May2013, Vol. 34 Issue 5, p587-589. 3p.

Subjects: Epitaxy, Ferroelectric RAM, Aluminum oxide, Atomic layer deposition, Crystal structure, Thermal stability, Reliability in engineering

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel.

Authors: Liu, Li-Jung Chang-Liao, Kuei-Shu Jian, Yi-Chuen et al.

Source: IEEE Electron Device Letters. Sep2012, Vol. 33 Issue 9, p1264-1266. 3p.

Subjects: Computer programming, Magnetic memory (Computers), Silicon germanium integrated circuits, Logic circuits, Nonvolatile memory, Atomic layer deposition, Electrons

Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel.

Authors: Chen, Chun-Yuan Chang-Liao, Kuei-Shu Liu, Li-Jung et al.

Source: IEEE Electron Device Letters; Oct2014, Vol. 35 Issue 10, p1025-1027, 3p

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in HfGeOx Interfacial Layer Formed by In Situ Desorption.

Authors: Li, Chen-Chien Chang-Liao, Kuei-Shu Liu, Li-Jung et al.

Source: IEEE Electron Device Letters; May2014, Vol. 35 Issue 5, p509-511, 3p

Enhanced Hole Mobility and Low Tinv for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel.

Authors: Fu, Chung-Hao Chang-Liao, Kuei-Shu Liu, Li-Jung et al.

Source: IEEE Electron Device Letters; Feb2012, Vol. 33 Issue 2, p188-190, 3p