Search Results - "Mathiot, D."

Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation.

Authors: Philippe, T. Duguay, S. Mathiot, D.

Source: Journal of Applied Physics; January 15 2011, Vol. 109 Issue 2, p023501-1-023501-4, 4p

Atomic-scale redistribution of dopants in polycrystalline silicon layers.

Authors: Duguay, S. Colin, A. Mathiot, D.

Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p034911-1-034911-7, 7p

Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe.

Authors: Grenouilloux, T. Ferron, A. Péré-Laperne, N. et al.

Source: Journal of Electronic Materials; Sep2017, Vol. 46 Issue 9, p5394-5399, 6p

Ostwald ripening of end-of-range defects in silicon.

Authors: Bonafos, C. Mathiot, D. Claverie, A.

Source: Journal of Applied Physics; March 15 1998, Vol. 83 Issue 6, p3008-3017, 10p

O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.

Authors: Devine, R. A. B. Mathiot, D. Warren, W. L.

Source: Journal of Applied Physics; March 1 1996, Vol. 79, p2302-2308, 7p

Boron diffusion through thin gate oxides: influence of nitridation and effect on the Si/SiO2 interface electrical characteristics.

Authors: Mathiot, D. Straboni, A. Andre, E.

Source: Journal of Applied Physics; June 15 1993, Vol. 73, p8215-8220, 6p

Deep-level transient spectroscopy characterization of silicon-silicon interfaces.

Authors: Stievenard, D. Wallart, X. Mathiot, D.

Source: Journal of Applied Physics; June 1 1991, Vol. 69, p7640-7644, 5p

Electrical characterization of silicon epitaxial layers grown by limited reaction processing.

Authors: Mathiot, D. Regolini, J. L. Dutartre, D.

Source: Journal of Applied Physics; January 1 1991, Vol. 69, p358-361, 4p

Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon.

Authors: Boughaba, S. Mathiot, D.

Source: Journal of Applied Physics; January 1 1991, Vol. 69, p278-283, 6p

Titanium-related deep levels in silicon: a reexamination.

Authors: Mathiot, D. Hocine, S.

Source: Journal of Applied Physics; December 15 1989, Vol. 66, p5862-5867, 6p

Dopant diffusion in silicon: a consistent view involving nonequilibrium defects.

Authors: Mathiot, D. Pfister, J. C.

Source: Journal of Applied Physics; May 15 1984, Vol. 55, p3518-3530, 13p

Influence of the nonequilibrium vacancies on the diffusion of phosphorus into silicon.

Authors: Mathiot, D. Pfister, J. C.

Source: Journal of Applied Physics; April 1982, Vol. 53, p3053-3058, 6p

Silicon self-diffusivity measurement in thermal SiO2 by 30Si/28Si isotopic exchange.

Authors: Mathiot, D. Schunck, J. P. Perego, M.

Source: Journal of Applied Physics; August 1 2003, Vol. 94 Issue 3, p2136-2138, 3p

Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient.

Authors: Ortiz, Ch Mathiot, D. Dubois, Ch

Source: Journal of Applied Physics; March 1 2000, Vol. 87 Issue 5, p2661-2663, 3p

Dopant redistribution in heavily doped silicon: confirmation of the validity of the vacancy-percolation model.

Authors: Mathiot, D. Pfister, J. C.

Source: Journal of Applied Physics; July 15 1989, Vol. 66, p970-972, 3p

Diffusion of phosphorus implanted in germanium

Authors: Canneaux, Th. Mathiot, D. Ponpon, J.P. et al.

Source: Materials Science & Engineering: B. Dec2008, Vol. 154-155, p68-71. 4p.

Subjects: Diffusion, Phosphorus, Germanium compounds, Semiconductor doping, Ion implantation, Silicon nitride, Secondary ion mass spectrometry, Computer simulation

Optical characterizations of doped silicon nanocrystals grown by co-implantation of Si and dopants in SiO2.

Authors: Frégnaux, M. Khelifi, R. Muller, D. et al.

Source: Journal of Applied Physics; 2014, Vol. 116 Issue 14, p1-8, 8p, 1 Chart, 4 Graphs

Spectroscopic studies of iron and chromium in germanium.

Authors: Gurimskaya, Y. Mathiot, D. Sellai, A. et al.

Source: Journal of Applied Physics; December 1 2011, Vol. 110 Issue 11, p113707-113707, 1p

Ultrathin n+/p junction in preamorphized silicon by phosphorus and carbon coimplantation engineering: Influence of C location.

Authors: Cagnat, N. Mathiot, D. Laviron, C.

Source: Journal of Applied Physics; November 15 2007, Vol. 102 Issue 10, p106102-106102, 1p

Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing.

Authors: Lévêque, P. Mathiot, D. Christensen, J. S.

Source: Journal of Applied Physics; April 1 2006, Vol. 99 Issue 7, p073506-073506, 1p