Search Results - "Mathiot, D."

Carrier Activation at End-of-Range (EOR) Defects and Grain Boundaries in Boron-Doped Silicon.

Authors: Li, Yi-Yao Yang, Yu-Chen Chou, Tung-Huan et al.

Source: Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2211-2218, 8p

Micro-nanoscale laser subsurface vertical modification of 4H-SiC semiconductor materials: mechanisms, processes, and challenges.

Authors: Li, Hongmei Wang, Hongwei Li, Yuxin et al.

Source: Discover Nano; 7/16/2025, Vol. 20 Issue 1, p1-27, 27p

Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.

Authors: Su, Jiale Li, Ben Ren, Yuhui et al.

Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 5, p316. 15p.

Subjects: Photodetectors, Dark currents (Electric), Infrared imaging, Optical resonators, Wavelengths, Surface passivation

Fine Needle Aspiration of CD20‐Negative Diffuse Large B Cell Lymphoma Presenting as an Anterior Neck Mass.

Authors: Hartzell, Connor Mason, Emily F. O'Conor, Christopher

Source: Cytopathology. Mar2025, Vol. 36 Issue 2, p197-200. 4p.

Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.

Authors: Belafhaili, Amine Laanab, Larbi

Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-6, 6p

Optical properties of cerium-doped SiNx thin films containing silicon nanocrystals.

Authors: Tiour, F. Bekhedda, K. Mahmoudi, B. et al.

Source: Applied Physics A: Materials Science & Processing. Jun2024, Vol. 130 Issue 6, p1-9. 9p.

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review.

Authors: Jang, Ye Jin Sharma, Ashutosh Jung, Jae Pil

Source: Materials (1996-1944). Dec2023, Vol. 16 Issue 24, p7652. 40p.

Accurate quantification of dislocation loops in complex functional alloys enabled by deep learning image analysis.

Authors: Bilyk, Thomas Goryaeva, Alexandra. M. Marinica, Mihai-Cosmin et al.

Source: Scientific Reports. 10/24/2024, Vol. 14 Issue 1, p1-11. 11p.

Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.

Authors: Lee, Fa-Yan Wu, YewChung Sermon Joshi, Abhijeet et al.

Source: Journal of Materials Science: Materials in Electronics; Jul2022, Vol. 33 Issue 20, p16272-16285, 14p

Symmetry-Aware EKV-Based Metaheuristic Optimization of CMOS LC-VCOs for Low-Phase-Noise Applications.

Authors: Lberni, Abdelaziz Marktani, Malika Alami Ahaitouf, Abdelaziz et al.

Source: Symmetry (20738994). Oct2025, Vol. 17 Issue 10, p1693. 27p.

Porous Silicon and Silicon Nanowires for On-Chip Supercapacitor Electrodes: A Review.

Authors: Sedlovets, Daria M.¹ (AUTHOR)

Source: Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 23, p1826. 34p.

Subjects: Porous silicon, Silicon nanowires, Electric capacity, Energy storage, Electrodes, Surface coatings, Supercapacitors, Microelectronics

Real-time spectroscopic ellipsometry of plasmonic nanoparticle growth in polyvinyl alcohol thin films.

Authors: Kfoury, Patrick Battie, Yann Naciri, Aotmane En et al.

Source: Journal of Nanoparticle Research. Feb2024, Vol. 26 Issue 2, p1-14. 14p.

Thermal annealing effects on tunnel oxide passivated hole contacts for high-efficiency crystalline silicon solar cells.

Authors: Kim, Yong-Jin Kweon, I Se Min, Kwan Hong et al.

Source: Scientific Reports. 9/2/2022, Vol. 12 Issue 1, p1-8. 8p.

Germanium Nanoparticles Prepared by Laser Ablation in Low Pressure Helium and Nitrogen Atmosphere for Biophotonic Applications.

Authors: Fronya, Anastasiya A. Antonenko, Sergey V. Karpov, Nikita V. et al.

Source: Materials (1996-1944). Aug2022, Vol. 15 Issue 15, p5308-5308. 14p.

White light emission of wide‐bandgap silicon carbide: A review.

Authors: Kar, Ajitesh Kundu, Kusumita Chattopadhyay, Himadri et al.

Source: Journal of the American Ceramic Society; May2022, Vol. 105 Issue 5, p3100-3115, 16p, 5 Diagrams, 7 Charts, 2 Graphs

Numerical Investigation of the Effects of the Beam Scanning Pattern and Overlap on the Temperature Distribution during the Laser Dopant Activation Anneal Process.

Authors: Choi, Donghyeok Shin, Joonghan

Source: Applied Sciences (2076-3417); Nov2021, Vol. 11 Issue 22, p10748, 14p

Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge⁺ implantation.

Authors: Belafhaili, Amine Laanab, Larbi

Source: Journal of Materials Science: Materials in Electronics. Feb2023, Vol. 34 Issue 5, p1-6. 6p.

Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation.

Authors: Philippe, T. Duguay, S. Mathiot, D.

Source: Journal of Applied Physics; January 15 2011, Vol. 109 Issue 2, p023501-1-023501-4, 4p

Atomic-scale redistribution of dopants in polycrystalline silicon layers.

Authors: Duguay, S. Colin, A. Mathiot, D.

Source: Journal of Applied Physics; Aug2010, Vol. 107 Issue 8, p034911-1-034911-7, 7p

A Picosecond Delay Generator Optimized by Layout and Routing Based on FPGA.

Authors: Zhu, Min Cui, Tang Qi, Xihan et al.

Source: Sensors (14248220). Jul2023, Vol. 23 Issue 13, p6144. 16p.