Search Results - "Mathiot, Daniel"

Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model.

Authors: Prégaldiny, Fabien Lallement, christophe Mathiot, Daniel

Source: Solid-State Electronics; May2004, Vol. 48 Issue 5, p781-787, 7p

A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs.

Authors: Prégaldiny, Fabien Lallement, Christophe Mathiot, Daniel

Source: Solid-State Electronics; December 2002, Vol. 46 Issue 12, p2191-2198, 8p

Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defect couplings.

Authors: Mathiot, Daniel Martin, Serge

Source: Journal of Applied Physics; September 15 1991, Vol. 70, p3071-3080, 10p

Solubility enhancement of metallic impurities in silicon by rapid thermal annealing.

Authors: Mathiot, Daniel Barbier, Daniel

Source: Journal of Applied Physics; April 1 1991, Vol. 69, p3878-3881, 4p

Cobalt related levels in P and (P+B) doped n-type silicon: possible observation of the (CoB) pair.

Authors: Mathiot, Daniel

Source: Journal of Applied Physics; February 15 1989, Vol. 65, p1554-1558, 5p

Kinetics of arsenic segregation at grain boundaries in polycrystalline silicon.

Authors: Nédédlec, Sophie Mathiot, Daniel

Source: Semiconductor Science & Technology; November 1997, Vol. 12, p1438-1445, 8p

Plasmonic properties of implanted Ag nanoparticles in SiO2 thin layer by spectroscopic ellipsometry.

Authors: Battie, Yann En Naciri, Aotmane Chaoui, Nouari et al.

Source: Journal of Applied Physics; 2017, Vol. 122 Issue 8, p1-10, 10p, 1 Color Photograph, 2 Diagrams, 1 Chart, 8 Graphs

Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2

Authors: Mathiot, Daniel Perego, Michele Fanciulli, Marco et al.

Source: Nuclear Instruments & Methods in Physics Research Section B. Jan2007, Vol. 254 Issue 1, p139-142. 4p.

Subjects: Properties of matter, Semiconductor doping, Solution (Chemistry), Ion bombardment

Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

Authors: Canneaux, Thomas Mathiot, Daniel Ponpon, Jean-Pierre et al.

Source: Thin Solid Films. Feb2010, Vol. 518 Issue 9, p2394-2397. 4p.

Subjects: Germanium crystals, Diffusion, Phosphorus, Point defects, Holes (Electron deficiencies), Semiconductor doping, Mathematical models

Quenched-in defect removal through silicide formation by rapid thermal processing.

Authors: Mathiot, Daniel

Source: Applied Physics Letters; 1/14/1991, Vol. 58 Issue 2, p131, 3p, 1 Chart, 2 Graphs

Correlated Structural and Luminescence Analysis of B‐Doped Si‐Nanocrystals Embedded in Silica.

Authors: Demoulin, Rémi Muller, Dominique Mathiot, Daniel et al.

Source: Physica Status Solidi - Rapid Research Letters. Jun2020, Vol. 14 Issue 6, p1-5. 5p.

Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis.

Authors: Khelifi, Rim Mathiot, Daniel Gupta, Raghav et al.

Source: Applied Physics Letters; 1/7/2013, Vol. 102 Issue 1, p013116-013116-4, 1p, 1 Diagram, 2 Graphs

Defect Behavior in BF2 Implants For S/D Applications as a Function of Ion Beam Characteristics.

Authors: Cagnat, Nathalie Laviron, Cyrille Auriac, Nicolas et al.

Source: AIP Conference Proceedings. 2006, Vol. 866 Issue 1, p133-136. 4p. 2 Diagrams, 2 Charts, 3 Graphs.

Ion beam synthesis of embedded III-As nanocrystals in silicon substrate.

Authors: Khelifi, Rim Frégnaux, Mathieu Le Gall, Yann et al.

Source: Physica Status Solidi (C). Jan2015, Vol. 12 Issue 1/2, p55-59. 5p.

Influence of doping on the optical properties of silicon nanocrystals embedded in SiO2.

Authors: Frégnaux, Mathieu Khelifi, Rim Le Gall, Yann et al.

Source: Physica Status Solidi (C). Jan2015, Vol. 12 Issue 1/2, p80-83. 4p.

Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias.

Authors: Djomeni, Larissa Mourier, Thierry Minoret, Stéphane et al.

Source: Microelectronic Engineering. May2014, Vol. 120, p127-132. 6p.

A Fully Characterizable Asynchronous Multiphase Delay Generator.

Authors: Zlatanski, Martin Uhring, Wilfried Le Normand, Jean-Pierre et al.

Source: IEEE Transactions on Nuclear Science. 2/1/2011, Vol. 58 Issue 2, p418-425. 8p.

An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

Authors: Prégaldiny, Fabien Lallement, Christophe van Langevelde, Ronald et al.

Source: Solid-State Electronics. Mar2004, Vol. 48 Issue 3, p427. 9p.