Search Results - "Merz J"

Exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM)

Authors: Merz, J. L. Mintairov, A. M. Kosel, T.

Source: IEE Proceedings -- Optoelectronics; Oct2004, Vol. 151 Issue 5, p346-351, 6p

Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots.

Authors: Mintairov, A. M. Merz, J. L. Kapaldo, J. et al.

Source: Semiconductors. Apr2018, Vol. 52 Issue 4, p502-506. 5p.

Photonics for integrated circuits and communications.

Authors: Merz, J. L. Yuan, Y. R. Vawter, G. A.

Source: Optical Engineering; March/April 1985, Vol. 24, p214-219, 6p

III-V heterostructure devices for integrated optics.

Authors: Merz, J. L.

Source: Optical Engineering; July/August 1980, Vol. 19, p581-586, 6p

Effects of impurity-free and impurity-induced disordering on the optical properties of GaAs/(Al,Ga)As distributed Bragg reflectors.

Authors: Floyd, P. D. Merz, J. L.

Source: Journal of Applied Physics; November 1 1994, Vol. 76, p5524-5527, 4p

Spectroscopic characterization of band discontinuity in free-standing CdZnS/ZnS strained layer superlattices.

Authors: Yokogawa, T. Ishikawa, T. Merz, J. L.

Source: Journal of Applied Physics; February 15 1994, Vol. 75, p2189-2193, 5p

Disordering induced by impurity diffusion in ZnSe-based superlattices and optical waveguides fabricated by disordering.

Authors: Yokogawa, T. Floyd, P. D. Merz, J. L.

Source: Journal of Applied Physics; September 15 1993, Vol. 74, p3840-3845, 6p

Analysis and optimization of quantum-well thickness for GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum-well lasers.

Authors: Zou, W. X. Merz, J. L. Coldren, L. A.

Source: Journal of Applied Physics; December 1 1992, Vol. 72, p5047-5054, 8p

Effect of layer thickness variations on the performance of asymmetric Fabry-Perot reflection modulators.

Authors: Law, K-K. Merz, J. L. Coldren, L. A.

Source: Journal of Applied Physics; August 1 1992, Vol. 72, p855-860, 6p

Iron redistribution and compensation mechanisms in semi-insulating Si-implanted InP.

Authors: Bahir, G. Merz, J. L. Abelson, J. R.

Source: Journal of Applied Physics; February 1 1989, Vol. 65, p1009-1017, 9p

Thin-film media—current and future technology.

Authors: Johnson, K. E. Mate, C. M. Merz, J. A.

Source: IBM Journal of Research & Development; September 1996, Vol. 40, p511-536, 26p

Electrochemical profiling of ion-implanted InP.

Authors: Bahir, G. Merz, J. L. Abelson, J. R.

Source: Journal of the Electrochemical Society; September 1987, Vol. 134, p2187-2193, 7p

Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys.

Authors: Mintairov, A. M. Merz, J. L. Vlasov, A. S.

Source: Semiconductor Science & Technology; October 1998, Vol. 13 Issue 10, p1140-1147, 8p

Superlattice surface-normal asymmetric Fabry-Perot reflection modulators: optical modulation and switching.

Authors: Law, Kwok-Keung Merz, J. L. Coldren, Larry A.

Source: IEEE Journal of Quantum Electronics; February 1993, Vol. 29, p727-740, 14p

CdZnSe/ZnSe strained layer superlattices disordered by germanium diffusion.

Authors: Yokogawa, T. Floyd, P. D. Merz, J. L.

Source: Journal of Electronic Materials; March 1994, Vol. 23, p283-287, 5p

Behavior of SiNx films as masks for Zn diffusion.

Authors: Zou, W. X. Vawter, G. A. Merz, J. L.

Source: Journal of Applied Physics; August 1 1987, Vol. 62, p828-831, 4p

Luminescence study of rapid thermal annealing of ion implantation damage in cadmium telluride.

Authors: James, K. M. Merz, J. L. Jones, C. E.

Source: Journal of Applied Physics; November 15 1986, Vol. 60, p3699-3710, 12p

Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition.

Authors: Pudensi, M. A. A. Mohammed, K. Merz, J. L.

Source: Journal of Applied Physics; 4/15/1985, Vol. 57, p2788-2792, 5p

Luminescence study of rapid lamp annealing of Si-implanted InP.

Authors: Kirillov, D. Merz, J. L. Kalish, R.

Source: Journal of Applied Physics; January 15 1985, Vol. 57, p531-536, 6p

Electronically active defects in cw beam-annealed Si. Electron-beam-induced current.

Authors: Sheng, N. H. Mizuta, M. Merz, J. L.

Source: Journal of Applied Physics; April 15 1984, Vol. 55, p3072-3091, 20p