Search Results - "Nemirovsky, Y."

Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers.

Authors: Nemirovsky, Y. Asa, G. Gorelik, J.

Source: Journal of Electronic Materials; June 2000, Vol. 29 Issue 6, p691-698, 8p

Characterization of dark noise in CdZnTe spectrometers.

Authors: Nemirovsky, Y. Asa, G. Ruzin, A.

Source: Journal of Electronic Materials; June 1998, Vol. 27 Issue 6, p807-812, 6p

Dark noise currents and energy resolution of CdZnTe spectrometers.

Authors: Nemirovsky, Y. Asa, G. Jakobson, C. G.

Source: Journal of Electronic Materials; June 1998, Vol. 27 Issue 6, p800-806, 7p

Spectral method for the electrostatic modeling of semiconductor γ-ray spectrometer arrays.

Authors: Dolgin, M. Einziger, P. D. Nemirovsky, Y.

Source: Journal of Applied Physics; February 15 2003, Vol. 93 Issue 4, p2182-2192, 11p

Modeling of the induced charge in semiconductor gamma-ray imaging array.

Authors: Ifraimov, M. Ludwig, A. Nemirovsky, Y.

Source: Journal of Applied Physics; June 15 2002, Vol. 91 Issue 12, p9676-9684, 9p

Statistical modeling of the spectral performance of a two-dimensional array of gamma-ray spectrometers.

Authors: Ifraimov, M. Ludwig, A. Nemirovsky, Y.

Source: Journal of Applied Physics; March 1 2002, Vol. 91 Issue 5, p3384-3397, 14p

Characterization of crosstalk between CMOS photodiodes.

Authors: Brouk, I. Nemirovsky, Y. Lachowicz, S.

Source: Solid-State Electronics; January 2002, Vol. 46 Issue 1, p53-59, 7p

Effect of the geometrical parameters on the electric field of pixelated two-dimensional arrays of γ-ray spectrometers.

Authors: Nemirovsky, Y. Ifraimov, M. Ludwig, A.

Source: Journal of Applied Physics; November 1 2000, Vol. 88 Issue 9, p5388-5394, 7p

Statistical modeling of charge collection in semiconductor gamma-ray spectrometers.

Authors: Nemirovsky, Y.

Source: Journal of Applied Physics; January 1 1999, Vol. 85 Issue 1, p8-15, 8p

Measurement of band offsets and interface charges by the C-V matching method.

Authors: Nemirovsky, Y. Gordon, G. Goren, D.

Source: Journal of Applied Physics; July 15 1998, Vol. 84 Issue 2, p1113-1120, 8p

Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers.

Authors: Ruzin, A. Nemirovsky, Y.

Source: Journal of Applied Physics; November 1 1997, Vol. 82, p4166-4171, 6p

Statistical models for charge collection efficiency and variance in semiconductor spectrometers.

Authors: Ruzin, A. Nemirovsky, Y.

Source: Journal of Applied Physics; September 15 1997, Vol. 82, p2754-2758, 5p

Barrier formation at graded HgTe/CdTe heterojunctions.

Authors: Goren, D. Asa, G. Nemirovsky, Y.

Source: Journal of Applied Physics; November 1 1996, Vol. 80, p5083-5088, 6p

Properties of metal-organic chemical-vapor-deposition mercury telluride contacts on p-type cadmium telluride.

Authors: Asa, G. Nemirovsky, Y.

Source: Journal of Applied Physics; May 1 1995, Vol. 77, p4417-4424, 8p

Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements.

Authors: Goren, D. Nemirovsky, Y.

Source: Journal of Applied Physics; January 1 1995, Vol. 77, p244-251, 8p

Band diagram of a HgTe-CdTe semimetal-semiconductor abrupt heterostructure.

Authors: Djaloshinski, L. Goren, D. Nemirovsky, Y.

Source: Journal of Applied Physics; May 1 1993, Vol. 73, p4473-4483, 11p

Determination of the interface charge between an epilayer and a substrate using capacitance-voltage measurements.

Authors: Goren, D. Amir, N. Nemirovsky, Y.

Source: Journal of Applied Physics; January 1 1992, Vol. 71, p318-325, 8p

Shockley-Read recombination and trapping in p-type HgCdTe.

Authors: Fastow, R. Goren, D. Nemirovsky, Y.

Source: Journal of Applied Physics; October 1 1990, Vol. 68, p3405-3412, 8p

The excess carrier lifetime in p-type HgCdTe measured by photoconductive decay.

Authors: Fastow, R. Nemirovsky, Y.

Source: Journal of Applied Physics; August 15 1989, Vol. 66, p1705-1710, 6p

Study of contacts to CdZnTe radiation detectors.

Authors: Nemirovsky, Y. Ruzin, A. Asa, G.

Source: Journal of Electronic Materials; June 1997, Vol. 26, p756-764, 9p