Search Results - "Nonvolatile memory"

Kioxia Ships Samples of New Flash Memory for AI Data Centers.

Authors: Mochizuki, Takashi Kiyohara, Mari

Source: Bloomberg.com. 7/2/2026, pN.PAG-N.PAG. 1p.

Kioxia Prepares US Shares After Riding AI Boom to Big Profit.

Authors: Mochizuki, Takashi Kiyohara, Mari

Source: Bloomberg.com. 5/15/2026, pN.PAG-N.PAG. 1p.

Kioxia Prepares US Listing After Riding AI Boom to Record Profit.

Authors: Mochizuki, Takashi Kiyohara, Mari

Source: Bloomberg.com. 5/15/2026, pN.PAG-N.PAG. 1p.

Persistent Electrical Overstress Recorder (PEOR) for Circuit Diagnostics.

Authors: Poornachandran, R. Dhivya, B. Rohan, S. et al.

Source: Advances in Consumer Research. Feb2026, Vol. 3 Issue 2, p332-338. 7p.

Unveiling the Roles of Bulk and Interface Defects of a High-K Dielectric TiO 2 -Based Charge-Trapping Layer in the Device Failure of Non-Volatile Charge-Trapping Memory.

Authors: Xia, Zhaoqing He, Yukai Lv, Lin et al.

Source: Surfaces (2571-9637). Jun2026, Vol. 9 Issue 2, p35. 17p.

High-temperature memristors enabled by interfacial engineering.

Authors: Zhao, Jian Jorgensen, Cameron S. Mahalingam, Krishnamurthy et al.

Source: Science. 5/14/2026, Vol. 392 Issue 6799, p771-779. 9p.

Subjects: Memristors, High temperature electronics, Surfaces (Technology), Tungsten, Nonvolatile memory, Thermal stability, Hafnium oxide, Graphene

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing.

Authors: Lee, Hyeonho Lee, Seungjun Kim, Tae‐Hyeon et al.

Source: Advanced Science. May2026, p1. 17p. 7 Illustrations.

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs.

Authors: Ma, Wenxuan Peng, Yue Wu, Qiuxia et al.

Source: Discover Nano; 5/6/2026, Vol. 21 Issue 1, p1-12, 12p

Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing.

Authors: Song, Mingxu Liu, Jiahao Zhu, Zhihong

Source: Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p444. 12p.

Subjects: Spin-orbit interactions, Nonvolatile memory, Antiferromagnetic materials, Electronic equipment, Edge computing, Hardware, Boolean expressions

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation.

Authors: Chen, Xiangwei Wang, Zheng Meng, Jialin et al.

Source: Nano-Micro Letters. 4/13/2026, Vol. 18 Issue 1, p1-37. 37p.

Inductance meets memory in a quantum magnet.

Authors: Cao, Tristan R. Schebel, Gabriel Quane, Arabella et al.

Source: Communications Physics. 4/11/2026, Vol. 9 Issue 1, p1-6. 6p.

Polymer-Engineered Interfaces for Tailoring Resistive Switching in TiO2-Based Memristors.

Authors: Thien, Gregory Soon How Wong, Yee-Jet Tan, Kar Ban et al.

Source: Engineering, Technology & Applied Science Research; Apr2026, Vol. 16 Issue 2, p33827-33835, 9p

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications.

Authors: Yang, Zhen Yang, Yuxiang Wang, Baiqian et al.

Source: Advanced Science. 3/27/2026, Vol. 13 Issue 18, p1-20. 20p.

Study and Design of the RF Part of a Passive RFID Tag at 900MHz Frequency for the ISO 18000-6c Standards.

Authors: Habibi, Sanae Bendali, Abdelhak Habibi, Mohamed et al.

Source: International Journal of Microwave & Optical Technology; Mar2026, Vol. 21 Issue 2, p124-131, 8p

Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.

Authors: Guo, Chucai Zhou, Qingwei Zheng, Biyuan et al.

Source: Nanomaterials (2079-4991). Jan2026, Vol. 16 Issue 2, p146. 10p.

Subjects: Nonvolatile memory, Chemical vapor deposition, Electronic industries, Quantum dots, Chemical synthesis, Computer performance

Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.

Authors: Yuan, Li Wu, Yongyu Ou, Haohui et al.

Source: Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1721. 14p.

Subjects: Nonvolatile memory, Field-effect transistors, Molybdenum, Charge carrier capture, Hydrazines, Metadata

Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.

Authors: Kalemai, Gion Aidinis, Konstantinos Sakellis, Elias et al.

Source: Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1707. 15p.

Subjects: Memristors, Nonvolatile memory, Heterostructures, Nonvolatile random-access memory, Molybdenum oxides, Charge carrier capture, Polymethylmethacrylate

Ultrafast high-endurance memory based on sliding ferroelectrics.

Authors: Kenji Yasuda Zalys-Geller, Evan Xirui Wang et al.

Source: Science (pre-March 2025). 7/5/2024, Vol. 385 Issue 6704, p53-56. 4p. 3 Diagrams.

Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide.

Authors: Wu, Qinci Li, Zhongrui Han, Bingchen et al.

Source: Science. 1/29/2026, Vol. 391 Issue 6784, p1-9. 9p.

Subjects: Ferroelectric devices, Bismuth selenide, Ferroelectric crystals, Permittivity, Nonvolatile memory, Intermolecular forces

Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices.

Authors: Ko, Eun Bee Sung, Junho Choi, Seon Yeon et al.

Source: Nano-Micro Letters. 1/26/2026, Vol. 18 Issue 1, p1-14. 14p.