Search Results - "Nonvolatile random-access memory"

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices.

Authors: Chen, Yen‐Jung Wang, Yong‐Jyun Hong, Zi‐Qin et al.

Source: Advanced Science. May2026, p1. 12p. 7 Illustrations.

NeoHebbian synapses to accelerate online training of neuromorphic hardware.

Authors: Pande, S. Bezugam, S. S. Bhattacharya, T. et al.

Source: Scientific Reports. 2/18/2026, Vol. 16 Issue 1, p1-16. 16p.

Halide perovskite-based memory devices and neuromorphic computing.

Authors: Paul, Tufan Sahoo, Aditi Maiti, Soumen et al.

Source: Dalton Transactions: An International Journal of Inorganic Chemistry. 5/12/2026, Vol. 55 Issue 18, p7019-7035. 17p.

Subjects: Artificial synapses, Nonvolatile random-access memory, Computer storage devices, Perovskite analysis, Internet of things, Information storage & retrieval systems, Artificial neural networks

Fabrication and Investigation of Switching Properties in HFSNO2–based RRAM.

Authors: Kuan, Chieh-Yu Chang, Sheng-Po Su, Wen-I et al.

Source: NANO (1793-2920). Jul2026, Vol. 21 Issue 9, p1-14. 14p.

Subjects: Hafnium compounds, Nonvolatile random-access memory, Electric properties, Multilayers, Sputter deposition

Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices.

Authors: Liao, Qi Du, Ling Qin, Ni et al.

Source: Journal of Materials Science: Materials in Electronics. Jun2025, Vol. 36 Issue 18, p1-12. 12p.

Subjects: Nonvolatile random-access memory, Chemical solution deposition, Oxygen vacancy, Thin films, Cobalt oxides

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO 3 Layers.

Authors: Liu, Kai Jiang, Wengui Zhou, Liang et al.

Source: Nanomaterials (2079-4991). Jul2025, Vol. 15 Issue 13, p1033. 16p.

Subjects: Two-dimensional materials (Nanotechnology), Nonvolatile random-access memory, Neuromorphics, Heterostructures, Applied sciences

Fabricating a NOR Gate Using Quantum Dot Gate FETs.

Authors: Parent, Elisa Legassey, Allen Jain, Faquir

Source: International Journal of High Speed Electronics & Systems. Mar2026, Vol. 35 Issue 1, p1-7. 7p.

Shining light on devices: New perspectives in non-volatile memory device and material investigation.

Authors: Jan, Atif Kelly, Dawn M. Di Martino, Giuliana

Source: APL Electronic Devices. Jun2025, Vol. 1 Issue 2, p1-20. 20p.

Gallium Oxide RRAM: Materials, Fundamentals and Applications.

Authors: Li, Zihao Gao, Xiangxiang Feng, Yuelong et al.

Source: Advanced Materials Technologies. May2026, Vol. 11 Issue 9, p1-24. 24p.

Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse.

Authors: Xu, Xiaolei Mi, Wei Wang, Di et al.

Source: Journal of Materials Science. Feb2025, Vol. 60 Issue 6, p2933-2947. 15p.

Subjects: Nonvolatile random-access memory, Rapid thermal processing, Oxygen vacancy, Thin films, Computer systems

Tuning resistive switching in ZnO and TiO2 nanostructures with cobalt doping.

Authors: Quiroz, Heiddy P. Terán, Cristian L. Calderón, Jorge A. et al.

Source: Journal of Materials Science: Materials in Electronics. Mar2025, Vol. 36 Issue 7, p1-12. 12p.

Subjects: Nonvolatile random-access memory, Oxygen vacancy, Thin films, Substrates (Materials science), Zinc oxide films

Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices.

Authors: Chen, Kai-Huang Kao, Ming-Cheng Chen, Hsin-Chin et al.

Source: Nanomaterials (2079-4991). Mar2025, Vol. 15 Issue 6, p448. 19p.

Subjects: Rare earth oxides, Nonvolatile random-access memory, Oxide coating, Aluminum electrodes, Random access memory

Polymer-Engineered Interfaces for Tailoring Resistive Switching in TiO2-Based Memristors.

Authors: Thien, Gregory Soon How Wong, Yee-Jet Tan, Kar Ban et al.

Source: Engineering, Technology & Applied Science Research; Apr2026, Vol. 16 Issue 2, p33827-33835, 9p

SAF-PUF: A Strong PUF with Zero-BER, ML-Resilience and Dynamic Key Concealment Enabled by RRAM Stuck-at-Faults.

Authors: Zhang, Qianwu Zheng, Bingyang Wu, Lin-Sheng et al.

Source: Applied Sciences (2076-3417); Mar2026, Vol. 16 Issue 6, p2817, 14p

Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena.

Authors: Kim, Hyoseob Kim, Suhan Cho, Jae-Yeong et al.

Source: Scientific Reports. 4/19/2025, Vol. 15 Issue 1, p1-12. 12p.

Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics.

Authors: Adiba, Adiba Meitei, Ph Nonglen Ahmad, Tufail

Source: Scientific Reports. 3/10/2025, Vol. 15 Issue 1, p1-9. 9p.

Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices.

Authors: Das, Susmita Haldar, Prabir Kumar Sarkar, Pranab Kumar

Source: Bulletin of Materials Science. Dec2024, Vol. 47 Issue 4, p1-5. 5p.

Subjects: Nonvolatile random-access memory, Data warehousing, Band gaps, Absorption spectra, Optoelectronic devices

Bilayer non-volatile RRAM with MgxNi1−xO conversion layer.

Authors: Qiu, Qi-Rui Chang, Sheng-Po Liu, Tzu-Yuan et al.

Source: Modern Physics Letters B. 12/20/2025, Vol. 39 Issue 35, p1-10. 10p.

Subjects: Nonvolatile random-access memory, Current-voltage characteristics, Durability, Nonvolatile memory, Transition metal oxides, Memristors, Electric conductivity

Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.

Authors: Chen, Kai-Huang Kao, Ming-Cheng Chen, Hsin-Chin et al.

Source: Applied Physics A: Materials Science & Processing. Jan2026, Vol. 132 Issue 1, p1-16. 16p.

Subjects: Nonvolatile random-access memory, Nonvolatile memory, Substrates (Materials science), Thin films, Strains & stresses (Mechanics), Rare earth oxides

3D-Bulk-RRAM für KI-Anwendungen.

Source: Elektronik Industrie. 3/3/2026, Issue 3, p66-66. 1p.