Search Results - "Pauc, N."

Engineering Properties of GeSi Alloy Quantum Dots by High-Temperature Annealing.

Authors: Luo, Wei Yin, Yang Huang, Qiang et al.

Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 12, p736. 11p.

Subjects: Semiconductor quantum dots, Rapid thermal processing, Photoluminescence, Transmission electron microscopy, Thermal expansion, Optoelectronics, Strains & stresses (Mechanics)

Optical Properties of GePb Alloy Realized by Ion Beam Technology.

Authors: Wen, Shuyu Zhu, Yuan-Hao Steuer, Oliver et al.

Source: Materials (1996-1944). May2025, Vol. 18 Issue 10, p2258. 13p.

Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications.

Authors: Zhao, Xuewei Miao, Yuanhao Su, Jiale et al.

Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 5, p295. 18p.

Subjects: Photodetectors, Ion implantation, Photoluminescence, Doping agents (Chemistry), Infrared imaging, N-type semiconductors

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.

Authors: Wangila, Emmanuel Gunder, Calbi Lytvyn, Petro M. et al.

Source: Crystals (2073-4352); May2024, Vol. 14 Issue 5, p414, 14p

Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots.

Authors: Makihara, Katsunori Yamamoto, Yuji Imai, Yuki et al.

Source: Nanomaterials (2079-4991). May2023, Vol. 13 Issue 9, p1475. 8p.

Subjects: Quantum dots, Potential well, Luminescence measurement, Light emitting diodes, Energy bands, Electroluminescence

Raman strain–shift measurements and prediction from first-principles in highly strained silicon.

Authors: Roisin, Nicolas Colla, Marie-Stéphane Raskin, Jean-Pierre et al.

Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-10, 10p

Processing and Characterization of High-Density Fe-Silicide/Si Core–Shell Quantum Dots for Light Emission.

Authors: Makihara, Katsunori Yamamoto, Yuji Schubert, Markus Andreas et al.

Source: Nanomaterials (2079-4991). May2025, Vol. 15 Issue 10, p733. 9p.

Subjects: Process capability, Electronic control, Light sources, Photons, Signal processing

Time-Resolved Photoluminescence in GeSn Film by New Infrared Streak Camera Attachment Based on a Broadband Light Upconversion.

Authors: Ščajev, Patrik Miasojedovas, Saulius Mekys, Algirdas et al.

Source: Coatings (2079-6412); Jan2023, Vol. 13 Issue 1, p111, 10p

On-Chip Strained Germanium Lasers: A Review.

Authors: Liu, Ronghuan Song, Weiqi Zheng, Zi-Wei

Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p356. 25p.

Subjects: Semiconductor lasers, Nanowires, Band gaps, Strain theory (Chemistry), Optical communications, Integrated optics

Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.

Authors: Hori, Masahiro Kume, Jinya Razanoelina, Manjakavahoaka et al.

Source: Communications Physics. 10/31/2023, Vol. 6 Issue 1, p1-11. 11p.

AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth.

Authors: Besancon, Claire Néel, Delphine Make, Dalila et al.

Source: Applied Sciences (2076-3417); Jan2022, Vol. 12 Issue 1, p263, 17p

Luminescence Properties of Defects in GaN: Solved and Unsolved Problems.

Authors: Reshchikov, Michael A.¹ (AUTHOR)

Source: Solids (2673-6497). Sep2025, Vol. 6 Issue 3, p52. 76p.

Experimental Study on Damage Effect of Mid-Infrared Pulsed Laser on Charge Coupled Device (CCD) and HgCgTe Detectors.

Authors: Liu, Yang Zhou, Feng Wang, Yunzhe et al.

Source: Sensors (14248220). Jul2024, Vol. 24 Issue 13, p4380. 15p.

Recrystallization of thick implanted GeSn layers with nanosecond laser annealing.

Authors: Casiez, L. Bernier, N. Chrétien, J. et al.

Source: Journal of Applied Physics; 4/21/2022, Vol. 131 Issue 15, p1-13, 13p

Room temperature optically pumped GeSn microdisk lasers.

Authors: Chrétien, J. Thai, Q. M. Frauenrath, M. et al.

Source: Applied Physics Letters; 1/31/2022, Vol. 120 Issue 5, p1-7, 7p

Comparison of Mean Absorption Methods for Radiation Transfer Models in Air Plasma at Various Pressures.

Authors: Kloc, Petr Aubrecht, Vladimir Bartlova, Milada et al.

Source: Plasma Chemistry & Plasma Processing; Mar2023, Vol. 43 Issue 2, p429-447, 19p

Porous Silicon and Silicon Nanowires for On-Chip Supercapacitor Electrodes: A Review.

Authors: Sedlovets, Daria M.¹ (AUTHOR)

Source: Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 23, p1826. 34p.

Subjects: Porous silicon, Silicon nanowires, Electric capacity, Energy storage, Electrodes, Surface coatings, Supercapacitors, Microelectronics

Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.

Authors: Jun, Hyunsung Choi, Johyeon Hwang, Jinyoung

Source: Sensors (14248220). Dec2023, Vol. 23 Issue 24, p9824. 10p.

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods.

Authors: Zhu, Guangjian Liu, Tao Zhong, Zhenyang et al.

Source: Nanoscale Research Letters; 1/21/2020, Vol. 15 Issue 1, p1-7, 7p

Vertically Aligned Platinum Copper Nanotubes as PEM Fuel Cell Cathode: Elaboration and Fuel Cell Test.

Authors: Marconot, O. Pauc, N. Buttard, D. et al.

Source: Fuel Cells. Dec2018, Vol. 18 Issue 6, p723-730. 8p.

Subjects: Protein-energy malnutrition, Fuel cells, Direct energy conversion, Porous materials, Electrochemistry