Search Results - "Perego, Michele"

Interface Effects in Ultrathin Silicon on Insulator Films.

Authors: Pulici, Andrea Seguini, Gabriele Taglietti, Fabiana et al.

Source: Advanced Functional Materials; 7/13/2026, Vol. 36 Issue 56, p1-14, 14p

Shaping the future of green hydrogen: De Nora's electrochemical technologies for fueling the energy transition.

Authors: Perego, Michele Scilabra, Patrick

Source: Pure & Applied Chemistry. Apr2024, Vol. 96 Issue 4, p487-491. 5p.

Influence of spin casting solvent on the self‐assembly of silicon‐containing block copolymer thin films via high temperature thermal treatment.

Authors: Giammaria, Tommaso J Laus, Michele Chiarcos, Riccardo et al.

Source: Polymer International. Apr2022, Vol. 71 Issue 4, p426-435. 10p.

Polystyrene Brush Evolution by Grafting to Reaction on Deglazed and Not‐Deglazed Silicon Substrates.

Authors: Ivaldi, Chiara Ospina Guarin, Viviana Maria Antonioli, Diego et al.

Source: Macromolecular Rapid Communications; Sep2024, Vol. 45 Issue 18, p1-7, 7p

High temperature surface neutralization process with random copolymers for block copolymer self-assembly.

Authors: Sparnacci, Katia Antonioli, Diego Perego, Michele et al.

Source: Polymer International. Mar2017, Vol. 66 Issue 3, p459-467. 9p.

Polymer Brushes by Grafting to Reaction in Melt: New Insights into the Mechanism.

Authors: Chiarcos, Riccardo Perego, Michele Laus, Michele

Source: Macromolecular Chemistry & Physics; Mar2023, Vol. 224 Issue 5, p1-17, 17p

Silicon crystallization in nanodot arrays organized by block copolymer lithography.

Authors: Perego, Michele Andreozzi, Andrea Seguini, Gabriele et al.

Source: Journal of Nanoparticle Research. Dec2014, Vol. 16 Issue 12, p1-10. 10p. 4 Black and White Photographs, 1 Diagram, 1 Graph.

ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures.

Authors: Perego, Michele Seguini, Gabriele Fanciulli, Marco

Source: Surface & Interface Analysis: SIA. Jan2013, Vol. 45 Issue 1, p386-389. 4p.

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping.

Authors: Barkby, Josh W. Moro, Fabrizio Perego, Michele et al.

Source: Scientific Reports. 8/23/2024, Vol. 14 Issue 1, p1-15. 15p.

Bottom‐Up Assembly of Micro/Nanostructures.

Authors: Mastrangeli, Massimo Perego, Michele

Source: Advanced Materials Interfaces; 3/6/2020, Vol. 7 Issue 5, p1-5, 5p

Effect of the Density of Reactive Sites in P(S-r-MMA) Film during Al2O3 Growth by Sequential Infiltration Synthesis.

Authors: Caligiore, Federica E. Nazzari, Daniele Cianci, Elena et al.

Source: Advanced Materials Interfaces; 6/21/2019, Vol. 6 Issue 12, p1-10, 10p

Doping of silicon nanocrystals.

Authors: Arduca, Elisa Perego, Michele

Source: Materials Science in Semiconductor Processing. May2017, Vol. 62, p156-170. 15p.

Subjects: Semiconductor doping, Nanosilicon, Nanocrystals, Dielectric materials, Charge carriers

E-MRS Fall Meeting 2022 Symposium L "Doping at the Nanoscale: New Challenges and Advanced Applications".

Authors: Napolitani, Enrico Perego, Michele Capasso, Andrea et al.

Source: Materials Science in Semiconductor Processing. Nov2023, Vol. 167, pN.PAG-N.PAG. 1p.

Subjects: Conferences & conventions

Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2

Authors: Mathiot, Daniel Perego, Michele Fanciulli, Marco et al.

Source: Nuclear Instruments & Methods in Physics Research Section B. Jan2007, Vol. 254 Issue 1, p139-142. 4p.

Subjects: Properties of matter, Semiconductor doping, Solution (Chemistry), Ion bombardment

Plasma-Assisted Atomic Layer Deposition of IrO 2 for Neuroelectronics.

Authors: Di Palma, Valerio Pianalto, Andrea Perego, Michele et al.

Source: Nanomaterials (2079-4991). Mar2023, Vol. 13 Issue 6, p976. 15p.

Subjects: Atomic layer deposition, Charge injection, Action potentials, Bioelectronics, Electrochemical electrodes, Thin films

Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer mask.

Authors: Pellegrino, Paolo Perego, Michele Schamm‐Chardon, Sylvie et al.

Source: Physica Status Solidi. A: Applications & Materials Science. Aug2013, Vol. 210 Issue 8, p1477-1484. 8p.

The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths.

Authors: Molle, Alessandro Perego, Michele Bhuiyan, Md. Nurul Kabir

Source: Journal of Applied Physics; August 1 2007, Vol. 102 Issue 3, p034513-034513, 1p

Phosphorus activation in silicon: To deglaze or not to deglaze, that is the question.

Authors: Barin, Gianluca Seguini, Gabriele Chiarcos, Riccardo et al.

Source: Materials Science in Semiconductor Processing; Oct2023, Vol. 165, pN.PAG-N.PAG, 1p

Electrical characterization of thin silicon-on-insulator films doped by means of phosphorus end-terminated polymers.

Authors: Pulici, Andrea Kuschlan, Stefano Seguini, Gabriele et al.

Source: Materials Science in Semiconductor Processing; Aug2023, Vol. 163, pN.PAG-N.PAG, 1p

The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths.

Authors: Molle, Alessandro Perego, Michele Bhuiyan, Md. Nurul Kabir et al.

Source: Journal of Applied Physics. 8/1/2007, Vol. 102 Issue 3, p034513. 4p. 1 Color Photograph, 3 Graphs.