Search Results - "Perego M"

Long‐term arsenic exposure impairs differentiation in mouse embryonal stem cells.

Authors: McMichael, Benjamin D. Perego, M. Chiara Darling, Caitlin L. et al.

Source: Journal of Applied Toxicology. Jul2021, Vol. 41 Issue 7, p1089-1102. 14p.

This result is not displayed to guests.
Login for full access.

Double-frequency-comb-like source with PM passive fibre cavity and Gain Through Filtering.

Authors: Stefano, Negrini Auro, Perego M. Matteo, Conforti et al.

Source: EPJ Web of Conferences. 10/18/2023, Vol. 287, p1-2. 2p.

O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates.

Authors: Lamagna, L. Wiemer, C. Perego, M.

Source: Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p084108-1-084108-11, 11p

This result is not displayed to guests.
Login for full access.

Detection and characterization of silicon nanocrystals embedded in thin oxide layers.

Authors: Perego, M. Ferrari, S. Fanciulli, M.

Source: Journal of Applied Physics; January 1 2004, Vol. 95 Issue 1, p257-262, 6p

Albany/FELIX: a parallel, scalable and robust, finite element, first-order Stokes approximation ice sheet solver built for advanced analysis.

Authors: Tezaur, I. K. Perego, M. Salinger, A. G. et al.

Source: Geoscientific Model Development. 2015, Vol. 8 Issue 9, p1197-1220. 24p.

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing.

Authors: Chery, N. Zhang, M. Monflier, R. et al.

Source: Journal of Applied Physics; 2/14/2022, Vol. 131 Issue 6, p1-12, 12p

Silicon self-diffusivity measurement in thermal SiO2 by 30Si/28Si isotopic exchange.

Authors: Mathiot, D. Schunck, J. P. Perego, M.

Source: Journal of Applied Physics; August 1 2003, Vol. 94 Issue 3, p2136-2138, 3p

Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers.

Authors: Perego, M. Ferrari, S. Spiga, S.

Source: Applied Physics Letters; January 6 2003, Vol. 82 Issue 1, p121-123, 3p

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

A MATRIX DEPENDENT/ALGEBRAIC MULTIGRID APPROACH FOR EXTRUDED MESHES WITH APPLICATIONS TO ICE SHEET MODELING.

Authors: TUMINARO, R. PEREGO, M. TEZAUR, I. et al.

Source: SIAM Journal on Scientific Computing. 2016, Vol. 38 Issue 5, pC504-C532. 29p.

Subjects: Algebraic multigrid methods, Mesh networks, Ice sheets, Iterative methods (Mathematics), Intergovernmental Panel on Climate Change, Mathematical models

FORMULATION AND ANALYSIS OF A PARAMETER-FREE STABILIZED FINITE ELEMENT METHOD.

Authors: BOCHEV, P. PEREGO, M. PETERSON, K.

Source: SIAM Journal on Numerical Analysis. 2015, Vol. 53 Issue 5, p2363-2388. 26p.

Subjects: Advection-diffusion equations, Finite element method, Numerical analysis, Transport equation, Equations

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors

Authors: Perego, M. Seguini, G. Fanciulli, M.

Source: Materials Science in Semiconductor Processing. Oct2008, Vol. 11 Issue 5/6, p221-225. 5p.

Subjects: X-ray photoelectron spectroscopy, Epitaxy, Photoemission, Photoconductivity, Hafnium oxide, Gallium arsenide, Germanium

Negative cluster emission in sputtering of Si1−x Ge x alloys: A full spectrum approach

Authors: Perego, M. Ferrari, S. Fanciulli, M.

Source: Surface Science. Dec2005, Vol. 599 Issue 1-3, p141-149. 9p.

Subjects: Germanium, Alloys, Metallic composites, Silicon

Synthesis of mono and bi-layer of Si nanocrystals embedded in a dielectric matrix by e-beam evaporation of SiO/SiO2 thin films

Authors: Perego, M. Fanciulli, M. Bonafos, C. et al.

Source: Materials Science & Engineering: C. Jul2006, Vol. 26 Issue 5-7, p835-839. 5p.

Subjects: Nanocrystals, Photoelectron spectroscopy, Thin films, Electron microscopy

Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS

Authors: Perego, M. Ferrari, S. Fanciulli, M. et al.

Source: Applied Surface Science. Jun2004, Vol. 231-232, p813-816. 4p.

Subjects: Silicon, Nanocrystals, Oxides, Secondary ion mass spectrometry