Search Results - "Phase change memory"

Dielectric Relaxation and Conduction Mechanisms in Se 90 Sn 6 Pb 4 Chalcogenide Glass for Memory and Sensor Applications.

Authors: Shaheen, Adel A. Imran, Mousa M. A. Holcman, Vladimír et al.

Source: Applied Sciences (2076-3417); Jun2026, Vol. 16 Issue 12, p5788, 22p

A coupled electro-thermal kinetic state variable model for GST467 phase change synapses.

Authors: Bhatnagar, Vikas Kumar, Adesh Bilgaye, Manish H.

Source: Discover Chemistry. 5/6/2026, Vol. 3 Issue 1, p1-22. 22p.

Density Functional Theory Analysis of the Electronic Properties of the Ge2Sb2Te5.

Authors: Garibova, S. N. Aliyev, M. E. Ashurova, U. I. et al.

Source: Chalcogenide Letters. Dec2025, Vol. 22 Issue 12, p999-1008. 10p.

The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.

Authors: Espiari, Abbas Padberg, Henriette Kiehn, Alexander et al.

Source: Materials (1996-1944). Oct2025, Vol. 18 Issue 20, p4681. 11p.

Subjects: Phase change memory, Plasma etching, Electric resistance, Durability, Chemical structure

Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control.

Authors: Bhatnagar, Vikas Kumar, Adesh Bilgaye, Manish H.

Source: JOM: The Journal of The Minerals, Metals & Materials Society (TMS). Jul2026, Vol. 78 Issue 7, p7062-7079. 18p.

Subjects: Phase change memory, Ionic conductivity, Computer simulation, Phase change materials, Temperature control

Effect of aluminium on the phase change properties of Ge₂Sb₂Te₅ for memory applications.

Authors: Kemparaju, R. Rohit Prabhudessai, Akila et al.

Source: Applied Physics A: Materials Science & Processing. Jun2026, Vol. 132 Issue 6, p1-15. 15p.

Subjects: Aluminum alloying, Phase change memory, Thermal stability, Phase change materials, Electrical resistivity, Phase transitions

Achieving ultralow resistance drift and enhanced thermal stability in Ti-doped GeSb9 alloys for phase-change memory.

Authors: Yang, Zilin Wang, Guoxiang Wu, Tong et al.

Source: Ceramics International. Jun2026:Part B, Vol. 52 Issue 14, p25034-25041. 8p.

Subjects: Thermal stability, Phase change memory, X-ray photoelectron spectroscopy, Crystallization, Magnetron sputtering, Phase change materials, Raman spectroscopy, Electric properties

Flexible memory devices using Ti-Zn-Sb nanoscale thin film for nonvolatile data storage and wearable electronics.

Authors: Fu, Bowen Wu, Weihua Zhang, Pei et al.

Source: Ceramics International. May2026:Part A, Vol. 52 Issue 13, p21848-21857. 10p.

Subjects: Phase change memory, Thin films, Biocompatibility, Wearable technology, Nanofilms, Mechanical behavior of materials, Nonvolatile memory

Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices.

Authors: Mishra, Amiya Kumar Pandey, Shivendra Kumar

Source: Semiconductor Science & Technology. 2026, Vol. 41 Issue 5, p1-9. 9p.

Subjects: Phase change memory, Phase change materials, Thermoelectric effects, Thermoelectricity, Finite element method

Memristive In‐Memory Object Detection with 128 Mb C‐Doped Ge2Sb2Te5 PCM Chip.

Authors: Xie, Chenchen Li, Yuqi Yan, Longhao et al.

Source: Advanced Science. 9/25/2025, Vol. 12 Issue 36, p1-13. 13p.

Electronic structures of crystalline and amorphous GeSe and GeSbTe compounds using machine learning empirical pseudopotentials.

Authors: Kang, Sungmo Kim, Rokyeon Han, Seungwu et al.

Source: APL Machine Learning. Sep2025, Vol. 3 Issue 3, p1-9. 9p.

Phase separation of Sb2Te films for phase change memory.

Authors: Zheng, Panpan Chen, Leng

Source: Applied Physics A: Materials Science & Processing. Mar2026, Vol. 132 Issue 3, p1-10. 10p.

Subjects: Phase separation, Phase change memory, X-ray photoelectron spectroscopy, Raman spectroscopy, Transmission electron microscopy, Van der Waals forces, X-ray diffraction, Antimony telluride

Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se80Sn20 films for phase change memory implementations.

Authors: El-Metwally, E. G. Mohamed, B. S. Bekheet, A. E.

Source: Journal of Materials Science: Materials in Electronics. Mar2026, Vol. 37 Issue 9, p1-18. 18p.

Subjects: Chalcogenide films, Phase change memory, Vapor-plating, Gallium alloys, Phase transitions, Amorphous semiconductors, Chalcogenide glass, Electric conductivity

Layer-dependent electronic, optical, and transport properties of few-layer GeSb2Te4.

Authors: Zhang, Chengqi Wan, Xiaoying Li, Jiahui et al.

Source: Journal of Physics D: Applied Physics. 2026, Vol. 59 Issue 13, p1-11. 11p.

Subjects: Phase change memory, Electronic materials, Ab-initio calculations, Two-dimensional materials (Nanotechnology), Optical properties, Transport theory

The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials.

Authors: Daoudi, O. Nolot, E. Bernard, M. et al.

Source: Scientific Reports. 7/7/2025, Vol. 15 Issue 1, p1-10. 10p.

The Role of Phase-Change Memory in Edge Computing and Analog In-Memory Computing: An Overview of Recent Research Contributions and Future Challenges.

Authors: Antolini, Alessio Zavalloni, Francesco Lico, Andrea et al.

Source: Sensors (14248220). Jun2025, Vol. 25 Issue 12, p3618. 18p.

Methods for Setting Device Specifications for Analog In‐Memory Computing Inference.

Authors: Wu, Zhenyu Su, Xin Rasch, Malte J. et al.

Source: Advanced Intelligent Systems (2640-4567); May2026, Vol. 8 Issue 5, p1-14, 14p

Scaling of Phase Change Memory Cell: Reducing Contact Size Beyond the Limit of Lithography.

Authors: Chen, Yuqing Wang, Ruobing Song, Sannian et al.

Source: Physica Status Solidi - Rapid Research Letters. May2026, Vol. 20 Issue 5, p1-15. 15p.

From flexibility to functionality: N-doped Sb films on PEEK for next-gen memory devices.

Authors: Wang, Xin Zhang, Jianpu Zhao, Shijie et al.

Source: Journal of Materials Science. Apr2025, Vol. 60 Issue 16, p6922-6933. 12p.

Subjects: Strains & stresses (Mechanics), Phase change memory, Polyether ether ketone, Fatigue limit, Bending stresses

Coherent Structure in Indium Doped Phase Change Materials.

Authors: Wang, Rui Zheng, Yonghui Liu, Qianchen et al.

Source: Materials (1996-1944). Mar2025, Vol. 18 Issue 5, p934. 9p.

Subjects: Phase change memory, Coherent structures, Phase change materials, Thermal stability, Phase separation