Search Results - "Pinacho R"

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.

Authors: Castrillo, P. Pinacho, R. Jaraiz, M.

Source: Journal of Applied Physics; May 15 2011, Vol. 109 Issue 10, p103502-1-103502-13, 13p

Carbon in silicon: Modeling of diffusion and clustering mechanisms.

Authors: Pinacho, R. Castrillo, P. Jaraiz, M.

Source: Journal of Applied Physics; August 1 2002, Vol. 92 Issue 3, p1582-1587, 6p

Electrical characterization of He-ion implantation-induced deep levels in p+ n InP junctions.

Authors: Quintanilla, L. Pinacho, R. Enriquez, L.

Source: Journal of Applied Physics; November 1 1999, Vol. 86 Issue 9, p4855-4860, 6p

Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs.

Authors: Dueñas, S. Pinacho, R. Castán, E.

Source: Journal of Applied Physics; November 1 1997, Vol. 82, p4338-4345, 8p

Dominant iron gettering mechanism in p/p+ silicon wafers.

Authors: Lin, Wen Benton, J. L. Pinacho, R.

Source: Applied Physics Letters; July 10 2000, Vol. 77 Issue 2, p241-243, 3p

Electrical characterization of a He ion implantation-induced deep level existing in p+ n InP junctions.

Authors: Quintanilla, L. Pinacho, R. Enriquez, L.

Source: Journal of Applied Physics; June 1 1999, Vol. 85 Issue 11, p7978-7980, 3p

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The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Authors: Castrillo, P. Pinacho, R. Jaraiz, M. et al.

Source: Materials Science & Engineering: B. Dec2008, Vol. 154-155, p260-263. 4p.

Subjects: Point defects, Diffusion, Anisotropy, Strains & stresses (Mechanics), Silicon, Monte Carlo method

Physical modeling of Fermi-level effects for decanano device process simulations

Authors: Martin-Bragado, I. Pinacho, R. Castrillo, P. et al.

Source: Materials Science & Engineering: B. Dec2004, Vol. 114-115, p284-289. 6p.

Subjects: Monte Carlo method, Stochastic processes, Native element minerals, Complementary metal oxide semiconductors

Comprehensive, physically based modelling of As in Si

Authors: Pinacho, R. Jaraiz, M. Castrillo, P. et al.

Source: Materials Science & Engineering: B. Dec2004, Vol. 114-115, p135-140. 6p.

Subjects: Complementary metal oxide semiconductors, Diffusion, Semiconductor doping, Solution (Chemistry)

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Authors: Castrillo, P. Jaraiz, M. Pinacho, R. et al.

Source: Thin Solid Films; Feb2010, Vol. 518 Issue 9, p2448-2453, 6p

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach.

Authors: Pinacho, R. Jaraiz, M. Castrillo, P.

Source: Applied Physics Letters; June 20 2005, Vol. 86 Issue 25, p252103-252103, 1p

Electrical characterization of He-ion implantation-induced deep levels in p...n InP junctions.

Authors: Quintanilla, L. Pinacho, R.

Source: Journal of Applied Physics. 11/1/1999, Vol. 86 Issue 9, p4855. 6p. 5 Graphs.

P.587 Prohibitin 2 study in postmortem prefrontal cortex in schizophrenia.

Authors: Vila, È. Pinacho, R. Prades, R. et al.

Source: European Neuropsychopharmacology. 2020 Supplement 1, Vol. 40, pS332-S333. 2p.

P.240 Investigation of the behavioural effects of paroxetine discontinuation in mice.

Authors: Collins, H. Pinacho, R. Ozdemir, D. et al.

Source: European Neuropsychopharmacology. 2020 Supplement 1, Vol. 40, pS136-S137. 2p.

Electrical characterization of a He ion implantation-induced deep level existing in p...n InP...

Authors: Quintanilla, L. Pinacho, R.

Source: Journal of Applied Physics. 6/1/1999, Vol. 85 Issue 11, p7978. 3p. 2 Graphs.

P.3.a.009 SP1 and SP4 transcription factors are increased in the postmortem hippocampus of subjects with chronic schizophrenia.

Authors: Pinacho, R. Villalmanzo, V. Valdizán, E. et al.

Source: European Neuropsychopharmacology. Oct2013 Supplement 2, Vol. 23, pS426-S427. 1p.

P.3.a.010 Large scale quantitative proteomic analysis in human postmortem dorsolateral prefrontal cortex tissue in schizophrenia.

Authors: Pinacho, R. Villalmanzo, N. Meana, J.J. et al.

Source: European Neuropsychopharmacology. Oct2013 Supplement 2, Vol. 23, pS427-S428. 1p.

Physically based modeling of dislocation loops in ion implantation processing in silicon

Authors: Castrillo, P. Martin-Bragado, I. Pinacho, R. et al.

Source: Materials Science & Engineering: B. Dec2005, Vol. 124-125, p404-408. 5p.

Subjects: Ion implantation, Ion bombardment, Ion plating, Heat treatment of metals

Characterization of a mouse model overexpressing beta-site APP-cleaving enzyme 2 reveals a new role for BACE2.

Authors: Azkona, G. Amador-Arjona, A. Obradors-Tarragó, C. et al.

Source: Genes, Brain & Behavior. Mar2010, Vol. 9 Issue 2, p160-172. 13p. 1 Diagram, 2 Charts, 7 Graphs.