Search Results - "Samuelson L"

Reduction of the schottky barrier height on silicon carbide using au nano-particles.

Authors: Lee, S.-K. Zetterling, C.-M. Ostling, M. et al.

Source: Solid-State Electronics; September 2002, Vol. 46 Issue 9, p1433-1440, 8p

This result is not displayed to guests.
Login for full access.

Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs.

Authors: Jönsson, J. Paulsson, G. Samuelson, L.

Source: Journal of Applied Physics; August 1 1991, Vol. 70, p1737-1741, 5p

Characterization of the Mn acceptor level in GaAs.

Authors: Montelius, L. Nilsson, S. Samuelson, L.

Source: Journal of Applied Physics; August 1 1988, Vol. 64, p1564-1567, 4p

Configuration coordinate diagram for the E4 defect in electron-irradiated GaP.

Authors: Huang, Qisheng Grimmeiss, H. G. Samuelson, L.

Source: Journal of Applied Physics; October 15 1985, Vol. 58, p3068-3071, 4p

Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys.

Authors: Omling, P. Samuelson, L. Grimmeiss, H. G.

Source: Journal of Applied Physics; September 1983, Vol. 54, p5117-5122, 6p

Temperature dependence of the apparent sizes of monolayer flat islands in cathodoluminescence images of quantum wells.

Authors: Gustafsson, A. Samuelson, L.

Source: Semiconductor Science & Technology; April 1995, Vol. 10, p425-432, 8p

Pressure-induced observation of the intrinsic M0x recombination in GaAsxP1-x.

Authors: Gerling, M. Pistol, M.-E. Samuelson, L.

Source: Semiconductor Science & Technology; June 1991, Vol. 6, p518-521, 4p

Creep buckling of a circular cylindrical shell.

Authors: Samuelson, L. A.

Source: AIAA Journal; January 1969, Vol. 7, p42-49, 8p

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

Golden rule with endogenous labor participation rate.

Authors: Samuelson, L.

Source: American Economic Review; September 1980, Vol. 70, p752-755, 4p

Experimental investigation of creep buckling of circular cylindrical shells under axial compression and bending.

Authors: Samuelson, L. A.

Source: Journal of Engineering for Industry; November 1968, Vol. 90, p589-595, 7p

Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces.

Authors: Borgstrom, M. Samuelson, L. Seifert, W.

Source: Applied Physics Letters; December 8 2003, Vol. 83 Issue 23, p4830-4832, 3p

Room-temperature and 50 GHz operation of a functional nanomaterial.

Authors: Song, A. M. Omling, P. Samuelson, L.

Source: Applied Physics Letters; August 27 2001, Vol. 79 Issue 9, p1357-1359, 3p

Electron beam prepatterning for site control of self-assembled quantum dots.

Authors: Borgstrom, M. Johansson, J. Samuelson, L.

Source: Applied Physics Letters; March 5 2001, Vol. 78 Issue 10, p1367-1369, 3p

The hole photoionization cross section of EL2 in GaAs1-xPx.

Authors: Silverberg, P. Omling, P. Samuelson, L.

Source: Journal of Applied Physics; May 1 1989, Vol. 65, p3721-3723, 3p

Landau level formation in semiconductor quantum dots in a high magnetic field.

Authors: Nomura, S. Samuelson, L. Pistol, M.-E.

Source: Applied Physics Letters; October 20 1997, Vol. 71, p2316-2318, 3p