Search Results - "Shellenbarger, Z."

Uncooled low-voltage AlGaAsSb/lnGaAsSb/GaSb avalanche photodetectors.

Authors: Sulima, O. V. Mauk, M. G. Shellenbarger, Z. A.

Source: IEE Proceedings -- Optoelectronics; Feb2004, Vol. 151 Issue 1, p1-5, 5p

Enhanced electro-optic effect in GaInAsP-InP three-step quantum wells.

Authors: Mohseni, H. An, H. Shellenbarger, Z. A.

Source: Applied Physics Letters; 3/15/2004, Vol. 84 Issue 11, p1823-1825, 3p

Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells.

Authors: Mohseni, H. An, H. Shellenbarger, Z. A.

Source: Applied Physics Letters; January 17 2005, Vol. 86 Issue 3, p031103-031103, 1p

Form GaAs/InGaAs Lasers On Virtual Ge.

Authors: Li, J. Z. Hydrick, J. M. Park, J. S. et al.

Source: Microwaves & RF. Oct2009, Vol. 48 Issue 10, p68-77. 6p. 6 Black and White Photographs, 1 Diagram, 2 Graphs.

0.52 eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology.

Authors: Dashiell, M. W. Beausang, J. F. Nichols, G. et al.

Source: AIP Conference Proceedings. 2004, Vol. 738 Issue 1, p404-414. 11p.

High-Efficiency Multi-Cell TPV Module Fabrication and Performance.

Authors: Yu, Y. Z. Martinelli, R. U. Taylor, G. C. et al.

Source: AIP Conference Proceedings. 2003, Vol. 653 Issue 1, p335. 9p.

Transient thermal analysis of InGaAsP-InP high-power diode laser arrays with different fill factors.

Authors: Gourevitch, A. Laikhtman, B. Westerfeld, D. et al.

Source: Journal of Applied Physics. 4/15/2005, Vol. 97 Issue 8, p084503. 6p. 1 Diagram, 1 Chart, 4 Graphs.

Growth and Optimization of Extremely High-Pulse-Power Graded-Index Separate Confinement Heterostructure Quantum Well AlGaAs/InGaAs Diode Lasers with Broadened Waveguides.

Authors: Li, J. Z. Martinelli, R. U. Khalfin, V. B. et al.

Source: Journal of Electronic Materials. Feb2005, Vol. 34 Issue 2, p156-160. 5p. 1 Diagram, 1 Chart, 5 Graphs.

Subjects: Quantum wells, Lasers, Metallurgical analysis, Metal organic chemical vapor deposition, Vapor-plating, Photoluminescence, Secondary ion mass spectrometry

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping.

Authors: Li, J. Z. Hydrick, J. M. Park, J. S. et al.

Source: Journal of The Electrochemical Society. 2009, Vol. 156 Issue 7, pH574-H578. 5p.

Subjects: Metal organic chemical vapor deposition, Germanium compounds, Ion traps, Substrates (Materials science), Electrolytic polishing, Epitaxy, Wavelengths, Lasers

Defect reduction of GaAs/Si epitaxy by aspect ratio trapping.

Authors: Li, J. Z. Bai, J. Major, C. et al.

Source: Journal of Applied Physics. May2008, Vol. 103 Issue 10, p106102. 3p. 3 Diagrams, 1 Graph.

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping.

Authors: Li, J. Z. Bai, J. Park, J.-S. et al.

Source: Applied Physics Letters. 7/9/2007, Vol. 91 Issue 2, p021114. 3p. 2 Diagrams, 1 Graph.

1.47–1.49-μm InGaAsP/InP diode laser arrays.

Authors: Gourevitch, A. Belenky, G. Donetsky, D. et al.

Source: Applied Physics Letters. 7/28/2003, Vol. 83 Issue 4, p617. 3p. 4 Graphs.