Search Results - "Skvortsov, Arkady A."

Development of thermal memory cells on silicon using the floating zero algorithm.

Authors: Kulchin, Yury N. Skvortsov, Arkady A. Nikolaev, Vladimir K. et al.

Source: Scientific Reports. 2/12/2025, Vol. 15 Issue 1, p1-10. 10p.

Magnetically stimulated transient creep processes in a heterogeneous aluminum alloy with ferromagnetic inclusions.

Authors: Nikolaev, Vladimir Friha, Mounir Skvortsov, Arkady A. et al.

Source: Scientific Reports. 8/20/2025, Vol. 15 Issue 1, p1-11. 11p.

Optimization of exhaust catalytic manifold of internal combustion engine.

Authors: Nikolaev, Vladimir K. Skvortsov, Arkady A. Khudayarov, Zamir F. et al.

Source: Journal of Materials Science: Materials in Engineering; 2/25/2025, Vol. 20 Issue 1, p1-19, 19p

Doping Profile Meter for Semiconductor Structures.

Authors: Manyakhin, Fedor Varlamov, Dmitry Morketsova, Lyudmila et al.

Source: Measurement. Jan-Mar2026, Vol. 24 Issue 1, p40-49. 10p.

DEFORMAÇÀO DE LIGAS DE ALUMÍNIO SOB INFLUÊNCIA DA CARGA ADICIONAL.

Alternate Title: DEFORMATIONS OF ALUMINUM ALLOYS UNDER THE INFLUENCE OF AN ADDITIONAL LOAD.
ДЕФОРМАЦИИ АЛЮМИНИЕВЫХ СПЛАВОВ ПОД ВЛИЯНИЕМ ДОПОЛНИТЕЛЬНОЙ НАГРУЗКИ

Authors: SKVORTSOV, Arkady A. PSHONKIN, Danila E. LUK'YANOV, Mikhail N. et al.

Source: Periódico Tchê Química. 2018, Vol. 15 Issue 30, p421-427. 7p.

Thermal shock and degradation of metallization systems on silicon.

Authors: Skvortsov, Arkady Zuev, Sergey Koryachko, Marina et al.

Source: Microelectronics International. 2016, Vol. 33 Issue 2, p102-106. 5p.

Subjects: Thermal shock, Silicon, Aluminum metallurgy, Microscopy, Thin films

Effect of magnetic fields on the formation of the neck of a flat aluminum sample with inclusions during stretching.

Authors: Skvortsov, Arkady A. Pshonkin, Danila E. Nikolaev, Vladimir K. et al.

Source: Mechanics Research Communications. May2023, Vol. 129, pN.PAG-N.PAG. 1p.

Subjects: Magnetic field effects, Mechanical loads, Aluminum alloys, Strains & stresses (Mechanics), Creep (Materials), Material plasticity

OTIMIZAÇÃO DO TRANSDUTOR DE PRESSÃO DE SEMICONDUTORES COM ELEMENTO SENSÍVEL BASEADO NA ESTRUTURA DE "SILÍCIO SOBRE SAFIRA".

Alternate Title: OPTIMIZATION OF SEMICONDUCTOR PRESSURE TRANSDUCER WITH SENSITIVE ELEMENT BASED ON "SILICON ON SAPPHIRE" STRUCTURE.
ОПТИМИЗАЦИЯ ПОЛУПРОВОДНИКОВОГО ТЕНЗОПРЕОБРАЗОВАТЕЛЯ ДАВЛЕНИЯ С ЧУВСТВИТЕЛЬНЫМ ЭЛЕМЕНТОМ НА ОСНОВЕ СТРУКТУРЫ «КРЕМНИЙ НА САПФИРЕ»

Authors: GAVRYUSHIN, Sergey S. SKVORTSOV, Pavel A. SKVORTSOV, Arkady A.

Source: Periódico Tchê Química. 2018, Vol. 15 Issue 30, p678-686. 9p.