Search Results - "Springholz G"

Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant.

Authors: Springholz, G. Holy, V. Pinczolits, M.

Source: Science; October 23 1998, Vol. 282 Issue 5389, p734-737, 4p

Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te3.

Authors: Tkáč, V. Vorobiov, S. Baloh, P. et al.

Source: NPJ 2D Materials & Applications; 8/8/2024, Vol. 8 Issue 1, p1-8, 8p

Fabrication of semiconductor nanostructures by nanoindentation of photoresist layers using atomic force microscopy.

Authors: Wiesauer, K. Springholz, G.

Source: Journal of Applied Physics; December 15 2000, Vol. 88 Issue 12, p7289-7297, 9p

Systematic study of PbTe (111) molecular-beam epitaxy using reflection high-energy electron-diffraction intensity oscillations.

Authors: Springholz, G. Bauer, G.

Source: Journal of Applied Physics; January 15 1995, Vol. 77, p540-552, 13p

Molecular beam epitaxy of PbTe/EuTe superlattices and their structural investigation by x-ray diffraction using reciprocal space mapping.

Authors: Koppensteiner, E. Springholz, G. Hamberger, P.

Source: Journal of Applied Physics; November 15 1993, Vol. 74, p6062-6071, 10p

Surface modifications in strained-layer heteroepitaxy studied by UHV-scanning tunneling microscopy.

Authors: Springholz, G. Frank, N. Bauer, G.

Source: Solid-State Electronics; 1996, Vol. 40 Issue 1-8, p571-577, 7p

Dot size dependence of vertical and lateral ordering in self-organized PbSe/Pb1-xEuxTe quantum-dot superlattices.

Authors: Springholz, G. Raab, A. Lechner, R. T.

Source: Applied Physics Letters; February 3 2003, Vol. 82 Issue 5, p799-801, 3p

Controlling the size and density of self-assembled PbSe quantum dots by adjusting the substrate temperature and layer thickness.

Authors: Raab, A. Springholz, G.

Source: Applied Physics Letters; September 23 2002, Vol. 81 Issue 13, p2457-2459, 3p

Self-organized lateral ordering for vertically aligned PbSe/PbEuTe quantum-dot superlattices.

Authors: Raab, A. Lechner, R. T. Springholz, G.

Source: Applied Physics Letters; February 18 2002, Vol. 80 Issue 7, p1273-1275, 3p

Midinfrared surface-emitting PbSe/PbEuTe quantum-dot lasers.

Authors: Springholz, G. Schwarzl, T. Heiss, W.

Source: Applied Physics Letters; August 27 2001, Vol. 79 Issue 9, p1225-1227, 3p

Magnetic-field-tunable photoluminescence transitions in antiferromagnetic EuTe epilayers layers with an effective g factor of 1140.

Authors: Heiss, W. Prechtl, G. Springholz, G.

Source: Applied Physics Letters; May 28 2001, Vol. 78 Issue 22, p3484-3486, 3p

Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers.

Authors: Heiss, W. Schwarzl, T. Springholz, G.

Source: Applied Physics Letters; February 12 2001, Vol. 78 Issue 7, p862-864, 3p

Oswald ripening and shape transitions of self-assembled PbSe quantum dots on PbTe (111) during annealing.

Authors: Raab, A. Springholz, G.

Source: Applied Physics Letters; November 6 2000, Vol. 77 Issue 19, p2991-2993, 3p

In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy.

Authors: Sanduijav, B. Matei, D. Springholz, G.

Source: Nanoscale Research Letters; Dec2010, Vol. 5 Issue 12, p1935-1941, 7p, 4 Diagrams, 2 Graphs

4.8 μm vertical emitting PbTe quantum-well lasers based on high-finesse EuTe/Pb1-xEuxTe microcavities.

Authors: Springholz, G. Schwarzl, T. Aigle, M.

Source: Applied Physics Letters; April 3 2000, Vol. 76 Issue 14, p1807-1809, 3p

Observation of large-scale surface undulations due to inhomogeneous dislocation strain fields in lattice-mismatched epitaxial layers.

Authors: Springholz, G.

Source: Applied Physics Letters; November 15 1999, Vol. 75 Issue 20, p3099-3101, 3p

Ultra-high-finesse IV-VI microcavities for the midinfrared.

Authors: Schwarzl, T. Heiss, W. Springholz, G.

Source: Applied Physics Letters; August 30 1999, Vol. 75 Issue 9, p1246-1248, 3p

Direct formation of self-assembled quantum dots under tensile strain by heteroepitaxy of PbSe on PbTe(111)

Authors: Pinczolits, M. Springholz, G. Bauer, G.

Source: Applied Physics Letters; July 13 1998, Vol. 73 Issue 2, p250-252, 3p

Converting Faraday rotation into magnetization in europium chalcogenides.

Authors: van Kooten, S. C. P. Usachev, P. A. Gratens, X. et al.

Source: Journal of Applied Physics; 9/7/2019, Vol. 126 Issue 9, pN.PAG-N.PAG, 8p, 1 Diagram, 5 Graphs

α-GeTe and (GeMn)Te Semiconductors: a New Paradigm for Spintronics.

Authors: Krempaský, J. Springholz, G. Minár, J. et al.

Source: AIP Conference Proceedings. 2018, Vol. 1996 Issue 1, p1-6. 6p. 4 Graphs.