Search Results - "Strunk, H. P."

Towards Rare‐Earth‐Doped Optoelectronics: GGA+U Analysis of Eu3+‐Doped ZnO Nanomaterials.

Authors: Badhan, Shahriar Haque Islam, Md Rasidul Nafiz Anam, B. M. et al.

Source: Advances in Condensed Matter Physics; 3/25/2026, Vol. 2026, p1-15, 15p

Towards Rare‐Earth‐Doped Optoelectronics: GGA+U Analysis of Eu³⁺‐Doped ZnO Nanomaterials.

Authors: Badhan, Shahriar Haque Islam, Md Rasidul Nafiz Anam, B. M. et al.

Source: Advances in Condensed Matter Physics. 3/25/2026, Vol. 2026, p1-15. 15p.

Subjects: Doped semiconductors, Optoelectronics, Optical properties, Band gaps, Rare earth ions, Density functional theory, Electronic materials

Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.

Authors: Babichev, A. V. Pirogov, E. V. Sobolev, M. S. et al.

Source: Semiconductors. Nov2023, Vol. 57 Issue 11, p474-482. 9p.

Cathodoluminescence in transmission electron microscopy.

Authors: STRUNK, H. P. ALBRECHT, M. SCHEEL, H.

Source: Journal of Microscopy. Oct2006, Vol. 224 Issue 1, p79-85. 7p. 2 Color Photographs, 3 Graphs.

Abnormal Grain Growth Mechanism in the Twin-Roller Cast Al-Fe-Si Alloy in the Annealing Process.

Authors: Zhu, Y. Z. Peng, H. Huang, H. et al.

Source: Advances in Materials Science & Engineering; 6/15/2020, p1-11, 11p

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope.

Authors: Albrecht, M. Strunk, H. P. Weyher, J. L.

Source: Journal of Applied Physics; August 15 2002, Vol. 92 Issue 4, p2000-2005, 6p

Microstructure and phase composition evolution of nano-crystalline carbon films: Dependence on deposition temperature.

Authors: Hoffman, A. Strunk, H. P. Heiman, A.

Source: Journal of Applied Physics; March 1 2002, Vol. 91 Issue 5, p3336-3344, 9p

Microscopic nature of the Er3+ emission in mixed amorphous-nanocrystalline Si:H films.

Authors: Aldabergenova, S. B. Strunk, H. P. Taylor, P. C.

Source: Journal of Applied Physics; September 15 2001, Vol. 90 Issue 6, p2773-2780, 8p

Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.

Authors: Marek, T. Kunsági-Máté, S. Strunk, H. P.

Source: Journal of Applied Physics; June 1 2001 pt1, Vol. 89 Issue 11, p6519-6522, 4p

Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.

Authors: Bessolov, V. N. Konenkova, E. V. Seredova, N. V. et al.

Source: Semiconductors. Mar2022, Vol. 56 Issue 3, p164-168. 5p.

Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.

Authors: Tyschenko, I. E. Khmelnitsky, R. A. Saraykin, V. V. et al.

Source: Semiconductors. Mar2022, Vol. 56 Issue 3, p215-222. 8p.

Misfit grainlets: point strain sources compensating misfit during epitaxial growth.

Authors: Albrecht, M. Christiansen, S. Strunk, H. P.

Source: Applied Physics Letters; February 24 1997, Vol. 70, p952-954, 3p

Distribution of Clusters Formed by sp²- and sp³-Bonds in a Carbon Diamond-like Thin Film.

Authors: Plotnikov, V. A. Makarov, S. V. Eremeenkova, O. O. et al.

Source: Technical Physics. May2021, Vol. 66 Issue 5, p643-647. 5p.

A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates.

Authors: Myasoedov, A. V. Sakharov, A. V. Nikolaev, A. E. et al.

Source: Technical Physics Letters. Oct2020, Vol. 46 Issue 10, p991-995. 5p.

Quantitative determination of defocus, thickness and composition from high-resolution transmission electron microscopy lattice images.

Authors: Stenkamp, D. Strunk, H. P.

Source: Applied Physics A: Materials Science & Processing. 1996, Vol. 62 Issue 4, p369. 4p.

Subjects: Crystal lattices, Crystals, Transmission electron microscopy

Vibrational Properties and Raman Peak Shift Relationships in Si1-xGex Epilayers Grown on Annealed Double Porous Silicon.

Authors: Gouder, Soraya Mahamdi, Ramdane Guiza, Dhouadi et al.

Source: Journal of Composite & Advanced Materials / Revue des Composites et des Matériaux Avancés. Oct2023, Vol. 33 Issue 5, p275-281. 7p.

An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy.

Authors: Myasoedov, A. V. Nechaev, D. V. Ratnikov, V. V. et al.

Source: Technical Physics Letters. Jun2020, Vol. 46 Issue 6, p543-547. 5p.

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy.

Authors: Ratnikov, V. V. Nechaev, D. V. Myasoedov, A. V. et al.

Source: Technical Physics Letters. Apr2020, Vol. 46 Issue 4, p389-392. 4p.

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

Authors: Seredin, P. V. Goloshchapov, D. L. Zolotukhin, D. S. et al.

Source: Semiconductors. Aug2019, Vol. 53 Issue 8, p1120-1130. 11p.

Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials.

Authors: BALADÉS, N. HERRERA, M. SALES, D.L. et al.

Source: Journal of Microscopy. Jan2019, Vol. 273 Issue 1, p81-88. 8p. 1 Diagram, 1 Chart, 2 Graphs.