Search Results - "Strunk, H.-P."

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope.

Authors: Albrecht, M. Strunk, H. P. Weyher, J. L.

Source: Journal of Applied Physics; August 15 2002, Vol. 92 Issue 4, p2000-2005, 6p

Microstructure and phase composition evolution of nano-crystalline carbon films: Dependence on deposition temperature.

Authors: Hoffman, A. Strunk, H. P. Heiman, A.

Source: Journal of Applied Physics; March 1 2002, Vol. 91 Issue 5, p3336-3344, 9p

Microscopic nature of the Er3+ emission in mixed amorphous-nanocrystalline Si:H films.

Authors: Aldabergenova, S. B. Strunk, H. P. Taylor, P. C.

Source: Journal of Applied Physics; September 15 2001, Vol. 90 Issue 6, p2773-2780, 8p

Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers.

Authors: Marek, T. Kunsági-Máté, S. Strunk, H. P.

Source: Journal of Applied Physics; June 1 2001 pt1, Vol. 89 Issue 11, p6519-6522, 4p

Damage to the silicon lattice by reactive ion etching.

Authors: Strunk, H. P. Cerva, H. Mohr, E. G.

Source: Journal of the Electrochemical Society; November 1988, Vol. 135, p2876-2880, 5p

Strain-induced island scaling during Si1-xGex heteroepitaxy.

Authors: Dorsch, W. Strunk, H. P. Wawra, H.

Source: Applied Physics Letters; January 12 1998, Vol. 72, p179-181, 3p

Misfit grainlets: point strain sources compensating misfit during epitaxial growth.

Authors: Albrecht, M. Christiansen, S. Strunk, H. P.

Source: Applied Physics Letters; February 24 1997, Vol. 70, p952-954, 3p

Cathodoluminescence in transmission electron microscopy.

Authors: STRUNK, H. P. ALBRECHT, M. SCHEEL, H.

Source: Journal of Microscopy. Oct2006, Vol. 224 Issue 1, p79-85. 7p. 2 Color Photographs, 3 Graphs.

Quantitative determination of defocus, thickness and composition from high-resolution transmission electron microscopy lattice images.

Authors: Stenkamp, D. Strunk, H. P.

Source: Applied Physics A: Materials Science & Processing. 1996, Vol. 62 Issue 4, p369. 4p.

Subjects: Crystal lattices, Crystals, Transmission electron microscopy

Optoelectronic properties of GaN epilayers in the region of yellow luminescence.

Authors: Grazzi, C. Strunk, H. P. Castaldini, A.

Source: Journal of Applied Physics; October 1 2006, Vol. 100 Issue 7, p073711-073711, 1p

Nondestructive evaluation of misfit dislocation densities in ZnSe/GaAs heterostructures by x-ray diffuse scattering.

Authors: Alexe, G. Heinke, H. Haase, L. et al.

Source: Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p103506-1-103506-6, 6p, 3 Black and White Photographs, 1 Chart, 7 Graphs

Microstructure of laser-crystallized silicon thin films on glass substrate.

Authors: Nerding, M. Dassow, R. Christiansen, S. et al.

Source: Journal of Applied Physics; 4/1/2002, Vol. 91 Issue 7, p4125, 6p, 1 Black and White Photograph, 3 Diagrams, 4 Graphs

Nanoscopic crystallography of chalcopyrite CuInS2 by techniques of convergent-beam electron diffraction.

Authors: Leicht, M. Stenkamp, D. Strunk, H. P. et al.

Source: Philosophical Magazine A. May99, Vol. 79 Issue 5, p1033-1043. 11p. 8 Black and White Photographs, 4 Diagrams, 1 Chart.

Microscopic nature of the Er[sup 3+] emission in mixed amorphous-nanocrystalline Si:H films.

Authors: Aldabergenova, S. B. Strunk, H. P. Taylor, P. C. et al.

Source: Journal of Applied Physics. 9/15/2001, Vol. 90 Issue 6. 1 Black and White Photograph, 1 Diagram, 1 Chart, 8 Graphs.

Strain-induced island scaling during Si[sub 1-x]Ge[sub x] heteroepitaxy.

Authors: Dorsch, W. Strunk, H. P. Wawra, H. et al.

Source: Applied Physics Letters. 1/12/1998, Vol. 72 Issue 2. 6 Black and White Photographs, 1 Chart, 1 Graph.

Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films.

Authors: Hanna, G. Glatzel, T. Sadewasser, S. et al.

Source: Applied Physics A: Materials Science & Processing. Jan2006, Vol. 82 Issue 1, p1-7. 7p. 1 Black and White Photograph, 1 Diagram, 2 Charts, 1 Graph.

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry.

Authors: Metzger, T. Hopler, R. Born, E. et al.

Source: Philosophical Magazine A. Apr98, Vol. 77 Issue 4, p1013-1025. 13p.

Two modes of HVPE growth of GaN and related macrodefects.

Authors: Voronenkov, V. V. Bochkareva, N. I. Gorbunov, R. I. et al.

Source: Physica Status Solidi (C). Mar2013, Vol. 10 Issue 3, p468-471. 4p.

Dislocation formation during laser processing of silicon solar cell materials.

Authors: Weng, Y. Kedjar, B. Ohmer, K. et al.

Source: Physica Status Solidi (C). Jan2013, Vol. 10 Issue 1, p28-31. 4p.

Photoluminescence from silicon nitride-no quantum effect.

Authors: Kistner, J. Chen, X. Weng, Y. et al.

Source: Journal of Applied Physics. Jul2011, Vol. 110 Issue 2, p023520. 5p.