Search Results - "Yew, Tri-Rung"

Photoactive Copper-Doped Zinc Stannate Thin Films for Ultraviolet–Visible Light Photodetector.

Authors: Fu, Ching-Tai Kuo, Chia-Tung Chi, Chong-Chi et al.

Source: Journal of Electronic Materials; Sep2022, Vol. 51 Issue 9, p4884-4895, 12p

Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.

Authors: Yew, Tri-Rung Lin, Yung-Jen Shieh, Ming-Deng

Source: Journal of Applied Physics; 5/15/1993, Vol. 73, p4932-4936, 5p

Low-temperature in situ surface cleaning of oxide-patterned wafers by Ar/H2 plasma sputter.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Journal of Applied Physics; November 1 1990, Vol. 68, p4681-4693, 13p

Selective silicon epitaxial growth at 800°C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Journal of Applied Physics; March 15 1989, Vol. 65, p2500-2507, 8p

The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.

Authors: Shieh, Ming-Deng Lee, Chiapyng Yew, Tri-Rung

Source: Journal of the Electrochemical Society; December 1994, Vol. 141, p3584-3587, 4p

Improved Resistive Switching of Textured ZnO Thin Films Grown on Ru Electrodes.

Authors: Liu, Zi-Jheng Chou, Jen-Chun Wei, Shih-Yuan et al.

Source: IEEE Electron Device Letters; December 2011, Vol. 32 Issue 12, p1728-1730, 3p

Cobalt Tungsten Oxide Thin Films Prepared by RF-Sputter for Photosensor.

Authors: Lan, Kai‐Wei Hong, Ying‐Jhan Chang, Pin et al.

Source: Advanced Materials Interfaces; Jun2017, Vol. 4 Issue 11, pn/a-N.PAG, 7p

Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS.

Authors: Onuki, Tatsuya Uesugi, Wataru Isobe, Atsuo et al.

Source: IEEE Journal of Solid-State Circuits; Apr2017, Vol. 52 Issue 4, p925-932, 8p

Phase transformation in Mg–Sb thin films

Authors: Chang, Chih-Chung Hung, Ching-Yi Kao, Kin-Fu et al.

Source: Thin Solid Films; Oct2010, Vol. 518 Issue 24, p7403-7406, 4p

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Effects of CH4/SiH4 flow ratio and microwave power on the growth of β-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 °C

Authors: Lee, Wen-Horng Lin, Jing-Cheng Lee, Chiapyng et al.

Source: Thin Solid Films; Feb2002, Vol. 405 Issue 1/2, p17, 6p

Selective silicon epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition using SiH4 and SiH4/H2.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Journal of Applied Physics. 3/15/1989, Vol. 65 Issue 6, p2500. 8p.

Structural properties of silicon epitaxy grown at 200–600 °C by electron-beam evaporation in an ultrahigh vacuum system.

Authors: Yew, Tri-Rung Lin, Yung-Jen Shieh, Ming-Deng et al.

Source: Journal of Applied Physics. 5/15/1993, Vol. 73 Issue 10, p4932. 5p. 14 Black and White Photographs, 1 Graph.

Low Resistivity Tin-Doped Copper Nanowires.

Authors: Lin, Ching-Yen Wang, Chiu-Yen Hung, Min-Hsiu et al.

Source: IEEE Electron Device Letters; Apr2013, Vol. 34 Issue 4, p529-531, 3p

In situ doping in silicon selective epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Applied Physics Letters; 11/5/1990, Vol. 57 Issue 19, p2010, 3p

High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth-sputter cycles.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Applied Physics Letters; 5/21/1990, Vol. 56 Issue 21, p2105, 3p

Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter.

Authors: Yew, Tri-Rung Reif, Rafael

Source: Applied Physics Letters; 9/4/1989, Vol. 55 Issue 10, p1014, 3p

Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)].

Authors: Yew, Tri-Rung O, Kenneth Reif, Rafael

Source: Applied Physics Letters; 6/13/1988, Vol. 52 Issue 24, p2061, 3p

Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition.

Authors: Yew, Tri-Rung O, Kenneth Reif, Rafael

Source: Applied Physics Letters; 5/23/1988, Vol. 52 Issue 21, p1797, 3p

ZnO-based one diode-one resistor device structure for crossbar memory applications.

Authors: Liu, Zi-Jheng Gan, Jon-Yiew Yew, Tri-Rung

Source: Applied Physics Letters; 4/9/2012, Vol. 100 Issue 15, p153503-153503-4, 1p, 1 Diagram, 1 Chart, 3 Graphs