Search Results - "Yuh-Renn Wu"

A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons.

Authors: Shuo-Fan Chen Yuh-Renn Wu

Source: Applied Physics Letters; 5/15/2017, Vol. 110 Issue 20, p1-5, 5p, 2 Diagrams, 4 Graphs

A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons.

Authors: Shuo-Fan Chen Yuh-Renn Wu

Source: Applied Physics Letters. 5/15/2017, Vol. 110 Issue 20, p1-5. 5p. 2 Diagrams, 4 Graphs.

Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model.

Authors: Kuan-Ying Ho Chi-Kang Li Hong-Jhang Syu et al.

Source: Journal of Applied Physics; 2016, Vol. 120 Issue 21, p1-9, 9p, 2 Diagrams, 4 Charts, 8 Graphs

Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure.

Authors: Chao-Wei Wu Yuh-Renn Wu

Source: AIP Advances. Nov2016, Vol. 6 Issue 11, p115201-1-115201-17. 17p.

Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption.

Authors: Yuh-Renn Wu Hinckley, John M. Singh, Jasprit

Source: Journal of Electronic Materials. May2008, Vol. 37 Issue 5, p578-584. 7p. 1 Diagram, 3 Charts, 5 Graphs.

Subjects: Heterostructures, Field-effect transistors, Monte Carlo method, Equations, Dynamics, Spectrum analysis

Device Scaling Physics and Channel Velocities in AIGaN/GaN HFETs: Velocities and Effective Gate Length.

Authors: Yuh-Renn Wu Singh, Madhusudan Singh, Jasprit

Source: IEEE Transactions on Electron Devices. Apr2006, Vol. 53 Issue 4, p588-593. 6p. 1 Diagram, 7 Graphs.

Subjects: Field-effect transistors, Monte Carlo method, Scattering (Physics), Polarization (Nuclear physics), Photon emission, Electric fields

Velocity Overshoot Effects and Scaling Is sues in III--V Nitrides.

Authors: Singh, Madhusudan Yuh-Renn Wu Singh, Jasprit

Source: IEEE Transactions on Electron Devices. Mar2005, Vol. 52 Issue 3, p311-316. 6p.

Subjects: Nitrides, Transistors, Semiconductors, Micrometers, Thickness measurement, Phonons

Polar Heterostructure for Multifunction Devices: Theoretical Studies.

Authors: Yuh-Renn Wu Singh, Jasprit

Source: IEEE Transactions on Electron Devices. Feb2005, Vol. 52 Issue 2, p284-293. 10p.

Subjects: Gallium arsenide semiconductors, Transistors, Heterostructures, Electrical engineering materials, Piezoelectric semiconductors, Silicon

Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells.

Authors: Cheng-Yu Chang Yuh-Renn Wu

Source: IEEE Journal of Quantum Electronics. Jun2010, Vol. 46 Issue 6, p884-889. 6p.

Subjects: Quantum wells, Nanostructures, Light emitting diodes, Quantum chemistry, Quantum efficiency, Spectrum analysis, Stark effect

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy.

Authors: Browne, David A. Mazumder, Baishakhi Yuh-Renn Wu et al.

Source: Journal of Applied Physics; 2015, Vol. 117 Issue 18, p185703-1-185703-9, 9p, 2 Diagrams, 12 Graphs

Mechanisms of the Asymmetric Light Output Enhancements in \(a\) -Plane GaN Light-Emitting Diodes With Photonic Crystals.

Authors: Hsiang-Wei Li Yu-Feng Yin Chen-Yu Chang et al.

Source: IEEE Journal of Quantum Electronics; Dec2014, Vol. 50 Issue 12, p951-956, 6p

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior.

Authors: Tsung-Jui Yang Shivaraman, Ravi Speck, James S. et al.

Source: Journal of Applied Physics; 2014, Vol. 116 Issue 11, p113104-1-113104-5, 5p, 4 Graphs

Thermoelectric characteristic of the rough InN/GaN core-shell nanowires.

Authors: Chao-Wei Wu Yuh-Renn Wu

Source: Journal of Applied Physics; 2014, Vol. 116 Issue 10, p1-8, 8p, 1 Diagram, 1 Chart, 6 Graphs

Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling.

Authors: Hui-Hsin Hsiao Hung-Chun Chang Yuh-Renn Wu

Source: Applied Physics Letters; 8/11/2014, Vol. 105 Issue 6, p1-5, 5p, 1 Color Photograph, 2 Diagrams, 2 Charts, 1 Graph

Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals.

Authors: Yen Chou Hsiang-Wei Li Yu-Feng Yin et al.

Source: Journal of Applied Physics; 2014, Vol. 115 Issue 19, p193107-1-193107-5, 5p, 2 Diagrams, 1 Chart, 4 Graphs

A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method.

Authors: I-Lin Lu Yuh-Renn Wu Jasprit Singh

Source: Journal of Applied Physics. Dec2010, Vol. 108 Issue 12, p124508. 6p. 1 Diagram, 1 Chart, 7 Graphs.

Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors.

Authors: Yuh-Renn Wu Singh, Jasprit

Source: Applied Physics Letters. 8/16/2004, Vol. 85 Issue 7, p1223-1225. 3p. 1 Diagram, 3 Graphs.

Gas-assisted focused-ion-beam lithography of a diamond (100) surface.

Authors: Datta, A. Yuh-Renn Wu

Source: Applied Physics Letters. 10/25/1999, Vol. 75 Issue 17, p2677. 3p. 6 Graphs.

Monte Carlo study of noise scaling in AlGaN / GaN HFETs.

Authors: Madhusudan Singh Yuh-Renn Wu Palacios, Tomas et al.

Source: AIP Conference Proceedings. 2005, Vol. 772 Issue 1, p441-442. 2p.

High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier.

Authors: Chih-Chien Pan Qimin Yan Houqiang Fu et al.

Source: Electronics Letters (Wiley-Blackwell); 7/23/2015, Vol. 51 Issue 15, p1187-1189, 2p, 1 Diagram, 3 Graphs