Search Results - INA,
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Authors: عصام كامل الع ازو1 Fawzissam90@gmail.com
Source: REMAH Journal. 2026, Issue 157, Part 5, p183-206. 24p.
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Authors: et al.
Source: Advanced Science. 7/9/2026, Vol. 13 Issue 38, p1-14. 14p.
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Source: Applied Sciences (2076-3417); May2026, Vol. 16 Issue 9, p4161, 14p
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Authors: et al.
Source: Scientific Reports. 10/27/2025, Vol. 15 Issue 1, p1-11. 11p.
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Source: INA Industrija nafte dd MarketLine Company Profile. 11/14/2025, p1-15. 15p.
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Source: Eduvest: Journal Of Universal Studies. Jun2026, Vol. 6 Issue 6, p6972-6980. 9p.
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Source: Indonesian Health Journal (IHJ). Jun2026, Vol. 5 Issue 2, p386-395. 10p.
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Authors: et al.
Source: Water (20734441). May2026, Vol. 18 Issue 10, p1204. 17p.
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Authors: Olawale, Margaret D.1 olawalemargaret@gmail.com
Source: Bulletin of the Chemical Society of Ethiopia. 2025, Vol. 39 Issue 12, p2389-2399. 11p.
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Authors: et al.
Source: Sensors (14248220). Dec2025, Vol. 25 Issue 23, p7345. 12p.
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Source: Applied Organometallic Chemistry. Feb2025, Vol. 39 Issue 2, p1-14. 14p.
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Authors: et al.
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-7. 7p.
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Authors: et al.
Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8286-8293, 8p
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Alternate Title: ДІЕЛЕКТРИЧНІ КОНСТАНТИ ТА ПОПЕРЕЧНІ ЕФЕКТИВНІ ЗАРЯДИ У П'ЯТИКОМПОНЕНТНОМУ СПЛАВІ GaxIn1-xNySbzAs1-y-z З ҐРАТКОЮ, УЗГОДЖЕНОЮ З InAs, GaSb ТА GaAs.
Authors: et al.
Source: East European Journal of Physics. 2025, Issue 4, p517-526. 10p.
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The Effect of Uncontrolled Impurities on Free Carrier Concentration in InAs After Thermal Treatment.
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Source: Armenian Journal of Physics. 2025, Vol. 18 Issue 4, p53-58. 6p.
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Source: Journal of Syntax Literate. Aug2025, Vol. 10 Issue 8, p6596-6609. 14p.
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Source: Semiconductors. Mar2025, Vol. 59 Issue 3, p300-309. 10p.
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Authors: et al.
Source: Humans (2673-9461). Mar2026, Vol. 6 Issue 1, p1. 12p.
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Impact of drain and source engineering on dual metal InAs-GaSb VTFETs with high-K gate stack design.
Authors: et al.
Source: Scientific Reports. 12/29/2025, Vol. 15 Issue 1, p1-15. 15p.
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