Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells.
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| Title: | Novel Passivation and Gettering Strategy for Silicon Wafer by Al |
|---|---|
| Authors: | Khokhar, Muhammad Quddamah1 (AUTHOR), Yousuf, Hasnain2 (AUTHOR), Chu, Mengmeng2 (AUTHOR), Kim, Youngkuk3 (AUTHOR), Jeon, Minsung3 (AUTHOR) mjeon23@skku.edu, Dhungel, Suresh Kumar3 (AUTHOR) suresh@skku.edu, Yi, Junsin1,2,3 (AUTHOR) junsin@skku.edu |
| Source: | Energy Technology. Apr2024, Vol. 12 Issue 4, p1-9. 9p. |
| Subject Terms: | *Solar cells, Polycrystalline silicon, Silicon wafers, Gettering, Passivation, Hydrogenated amorphous silicon, Silicon nitride films |
| Abstract: | This study focuses on the enhanced passivation and gettering of boron‐doped p‐type solar grade silicon wafers by incorporating carrier‐selective and passivating tunnel oxide contact (TOPCon). A symmetrical stack of aluminum oxide (Al2O3)/p‐doped n‐type polysilicon (n‐poly‐Si)/ ultrathin silicon oxide (SiOx) in conjunction with long cycles of forming gas annealing is used for enhancing the silicon wafer quality with a novel approach. Multilayer of n‐poly‐Si/SiOx on p‐type crystalline silicon wafer exhibits an implied open‐circuit voltage (iVoc) of 726 mV, effective carrier lifetime (τeff) of 857 μs, and a low recombination current density (Jo) of 1.9 fA cm−2 when subjected to a postdeposition annealing (PDA) of phosphorus‐doped hydrogenated amorphous silicon (n‐a‐Si:H) at 820 °C. To boost passivation and gettering quality, 10 nm‐thick Al2O3 layers on both sides of n‐poly‐Si/SiOx samples are added. This leads to improved τeff (962 μs), reduced Jo (1.1 fA cm−2), and higher iVoc (728 mV). Herein, a thinner 50 nm n‐poly‐Si layer for improved properties is applied. The experiments show improved passivation and gettering. A Quokka‐3 simulation examines the potential of high‐efficiency p‐type TOPCon cells. A novel solar‐grade p‐type wafer quality enhancement approach is introduced, amalgamated with Quokka‐3 results, which could be a milestone in high‐efficiency p‐type TOPCon solar cell production. [ABSTRACT FROM AUTHOR] |
| Copyright of Energy Technology is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: 8gh DbLabel: GreenFILE An: 176585691 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Novel Passivation and Gettering Strategy for Silicon Wafer by Al<subscript>2</subscript>O<subscript>3</subscript>/n‐poly‐Si/SiO<subscript>x</subscript> Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Khokhar%2C+Muhammad+Quddamah%22">Khokhar, Muhammad Quddamah</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yousuf%2C+Hasnain%22">Yousuf, Hasnain</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chu%2C+Mengmeng%22">Chu, Mengmeng</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Youngkuk%22">Kim, Youngkuk</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jeon%2C+Minsung%22">Jeon, Minsung</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> mjeon23@skku.edu</i><br /><searchLink fieldCode="AR" term="%22Dhungel%2C+Suresh+Kumar%22">Dhungel, Suresh Kumar</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> suresh@skku.edu</i><br /><searchLink fieldCode="AR" term="%22Yi%2C+Junsin%22">Yi, Junsin</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> junsin@skku.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Energy+Technology%22">Energy Technology</searchLink>. Apr2024, Vol. 12 Issue 4, p1-9. 9p. – Name: Subject Label: Subject Terms Group: Su Data: *<searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Polycrystalline+silicon%22">Polycrystalline silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+wafers%22">Silicon wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Gettering%22">Gettering</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogenated+amorphous+silicon%22">Hydrogenated amorphous silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride+films%22">Silicon nitride films</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This study focuses on the enhanced passivation and gettering of boron‐doped p‐type solar grade silicon wafers by incorporating carrier‐selective and passivating tunnel oxide contact (TOPCon). A symmetrical stack of aluminum oxide (Al2O3)/p‐doped n‐type polysilicon (n‐poly‐Si)/ ultrathin silicon oxide (SiOx) in conjunction with long cycles of forming gas annealing is used for enhancing the silicon wafer quality with a novel approach. Multilayer of n‐poly‐Si/SiOx on p‐type crystalline silicon wafer exhibits an implied open‐circuit voltage (iVoc) of 726 mV, effective carrier lifetime (τeff) of 857 μs, and a low recombination current density (Jo) of 1.9 fA cm−2 when subjected to a postdeposition annealing (PDA) of phosphorus‐doped hydrogenated amorphous silicon (n‐a‐Si:H) at 820 °C. To boost passivation and gettering quality, 10 nm‐thick Al2O3 layers on both sides of n‐poly‐Si/SiOx samples are added. This leads to improved τeff (962 μs), reduced Jo (1.1 fA cm−2), and higher iVoc (728 mV). Herein, a thinner 50 nm n‐poly‐Si layer for improved properties is applied. The experiments show improved passivation and gettering. A Quokka‐3 simulation examines the potential of high‐efficiency p‐type TOPCon cells. A novel solar‐grade p‐type wafer quality enhancement approach is introduced, amalgamated with Quokka‐3 results, which could be a milestone in high‐efficiency p‐type TOPCon solar cell production. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Energy Technology is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/ente.202301031 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Subjects: – SubjectFull: Solar cells Type: general – SubjectFull: Polycrystalline silicon Type: general – SubjectFull: Silicon wafers Type: general – SubjectFull: Gettering Type: general – SubjectFull: Passivation Type: general – SubjectFull: Hydrogenated amorphous silicon Type: general – SubjectFull: Silicon nitride films Type: general Titles: – TitleFull: Novel Passivation and Gettering Strategy for Silicon Wafer by Al2O3/n‐poly‐Si/SiOx Stack for High‐Efficiency p‐Type Passivating Tunnel Oxide Contact Solar Cells. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Khokhar, Muhammad Quddamah – PersonEntity: Name: NameFull: Yousuf, Hasnain – PersonEntity: Name: NameFull: Chu, Mengmeng – PersonEntity: Name: NameFull: Kim, Youngkuk – PersonEntity: Name: NameFull: Jeon, Minsung – PersonEntity: Name: NameFull: Dhungel, Suresh Kumar – PersonEntity: Name: NameFull: Yi, Junsin IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 21944288 Numbering: – Type: volume Value: 12 – Type: issue Value: 4 Titles: – TitleFull: Energy Technology Type: main |
| ResultId | 1 |
