APA (7th ed.) Citation

Kerlain, A., Brunner, A., Sam-Giao, D., Pére-Laperne, N., Rubaldo, L., Destefanis, V., . . . Cervera, C. (2016). Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. Journal of Electronic Materials, 45(9), 4557. https://doi.org/10.1007/s11664-016-4506-5

Chicago Style (17th ed.) Citation

Kerlain, A., A. Brunner, D. Sam-Giao, N. Pére-Laperne, L. Rubaldo, V. Destefanis, F. Rochette, and C. Cervera. "Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations." Journal of Electronic Materials 45, no. 9 (2016): 4557. https://doi.org/10.1007/s11664-016-4506-5.

MLA (9th ed.) Citation

Kerlain, A., et al. "Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations." Journal of Electronic Materials, vol. 45, no. 9, 2016, p. 4557, https://doi.org/10.1007/s11664-016-4506-5.