Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
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| Title: | Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. |
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| Authors: | Kerlain, A.1, alexandre.kerlain@sofradir.com, Brunner, A.1, Sam-Giao, D.1, Pére-Laperne, N.1, Rubaldo, L.1, Destefanis, V.1, Rochette, F.2, Cervera, C.2 |
| Source: | Journal of Electronic Materials; Sep2016, Vol. 45 Issue 9, p4557-4562, 6p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 117023007 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Kerlain%2C+A%2E%22">Kerlain, A.</searchLink><relatesTo>1</relatesTo>, <i>alexandre.kerlain@sofradir.com</i><br /><searchLink fieldCode="AU" term="%22Brunner%2C+A%2E%22">Brunner, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sam-Giao%2C+D%2E%22">Sam-Giao, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Pére-Laperne%2C+N%2E%22">Pére-Laperne, N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Rubaldo%2C+L%2E%22">Rubaldo, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Destefanis%2C+V%2E%22">Destefanis, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Rochette%2C+F%2E%22">Rochette, F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Cervera%2C+C%2E%22">Cervera, C.</searchLink><relatesTo>2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Sep2016, Vol. 45 Issue 9, p4557-4562, 6p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=117023007 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-016-4506-5 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 4557 Titles: – TitleFull: Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kerlain, A. – PersonEntity: Name: NameFull: Brunner, A. – PersonEntity: Name: NameFull: Sam-Giao, D. – PersonEntity: Name: NameFull: Pére-Laperne, N. – PersonEntity: Name: NameFull: Rubaldo, L. – PersonEntity: Name: NameFull: Destefanis, V. – PersonEntity: Name: NameFull: Rochette, F. – PersonEntity: Name: NameFull: Cervera, C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2016 Type: published Y: 2016 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 45 – Type: issue Value: 9 Titles: – TitleFull: Journal of Electronic Materials Type: main |
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