Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.

Saved in:
Bibliographic Details
Title: Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
Authors: Kerlain, A.1, alexandre.kerlain@sofradir.com, Brunner, A.1, Sam-Giao, D.1, Pére-Laperne, N.1, Rubaldo, L.1, Destefanis, V.1, Rochette, F.2, Cervera, C.2
Source: Journal of Electronic Materials; Sep2016, Vol. 45 Issue 9, p4557-4562, 6p
Database: Applied Science & Technology Source
FullText Links:
  – Type: pdflink
Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 117023007
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kerlain%2C+A%2E%22">Kerlain, A.</searchLink><relatesTo>1</relatesTo>, <i>alexandre.kerlain@sofradir.com</i><br /><searchLink fieldCode="AU" term="%22Brunner%2C+A%2E%22">Brunner, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sam-Giao%2C+D%2E%22">Sam-Giao, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Pére-Laperne%2C+N%2E%22">Pére-Laperne, N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Rubaldo%2C+L%2E%22">Rubaldo, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Destefanis%2C+V%2E%22">Destefanis, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Rochette%2C+F%2E%22">Rochette, F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Cervera%2C+C%2E%22">Cervera, C.</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Sep2016, Vol. 45 Issue 9, p4557-4562, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=117023007
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-016-4506-5
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 4557
    Titles:
      – TitleFull: Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kerlain, A.
      – PersonEntity:
          Name:
            NameFull: Brunner, A.
      – PersonEntity:
          Name:
            NameFull: Sam-Giao, D.
      – PersonEntity:
          Name:
            NameFull: Pére-Laperne, N.
      – PersonEntity:
          Name:
            NameFull: Rubaldo, L.
      – PersonEntity:
          Name:
            NameFull: Destefanis, V.
      – PersonEntity:
          Name:
            NameFull: Rochette, F.
      – PersonEntity:
          Name:
            NameFull: Cervera, C.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2016
              Type: published
              Y: 2016
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 45
            – Type: issue
              Value: 9
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1