Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations. - Kerlain, A.; Brunner, A.; Sam-Giao, D.; Pére-Laperne, N.; Rubaldo, L.; Destefanis, V.; Rochette, F.; Cervera, C. (Journal of Electronic Materials, 2016)